公开(公告)号：US20130052812A1

公开(公告)日：2013-02-28

申请号：US13453039

申请日：2012-04-23

申请人： Kazunari Nakata ,  Tamio Matsumura

发明人： Kazunari Nakata ,  Tamio Matsumura

IPC分类号： H01L21/265 ,  H01L21/306 ,  H01L21/31 ,  H01L21/304 ,  H01L21/28

CPC分类号： H01L21/304 ,  B24B7/228 ,  B24B41/068 ,  H01L29/0657

摘要： A method of manufacturing a semiconductor device, includes a wafer grinding step of, by means of a revolving grinding stone, forming a thinned portion in a wafer while at the same time forming a slope surrounding said thinned portion, wherein during said formation of said slope, said grinding stone is positioned so that there is always a space between said slope and the facing side of said grinding stone, wherein said thinned portion is thinner than a peripheral portion of said wafer, and wherein said slope extends along and defines an inner circumferential side of said peripheral portion and forms an angle of 75° or more but less than 90° with respect to a main surface of said wafer. The method of manufacturing a semiconductor device further includes a step of forming a semiconductor device in said thinned portion.

摘要翻译： 一种制造半导体器件的方法包括：通过旋转研磨石在晶片中形成薄化部分同时形成围绕所述薄化部分的斜面的晶片研磨步骤，其中在所述斜面的形成期间 所述研磨石的位置使得在所述磨石的所述倾斜面和所述相对侧之间总是具有空间，其中所述变薄部分比所述晶片的周边部分薄，并且其中所述斜面沿着并且限定内圆周 并且相对于所述晶片的主表面形成75°以上但小于90°的角度。 制造半导体器件的方法还包括在所述薄化部分中形成半导体器件的步骤。

公开(公告)号：US08987122B2

公开(公告)日：2015-03-24

申请号：US13453039

申请日：2012-04-23

申请人： Kazunari Nakata ,  Tamio Matsumura

发明人： Kazunari Nakata ,  Tamio Matsumura

IPC分类号： H01L29/30 ,  H01L21/304 ,  B24B41/06 ,  B24B7/22 ,  H01L29/06

CPC分类号： H01L21/304 ,  B24B7/228 ,  B24B41/068 ,  H01L29/0657

摘要： A method of manufacturing a semiconductor device, includes a wafer grinding step of, by means of a revolving grinding stone, forming a thinned portion in a wafer while at the same time forming a slope surrounding said thinned portion, wherein during said formation of said slope, said grinding stone is positioned so that there is always a space between said slope and the facing side of said grinding stone, wherein said thinned portion is thinner than a peripheral portion of said wafer, and wherein said slope extends along and defines an inner circumferential side of said peripheral portion and forms an angle of 75° or more but less than 90° with respect to a main surface of said wafer. The method of manufacturing a semiconductor device further includes a step of forming a semiconductor device in said thinned portion.

摘要翻译： 一种制造半导体器件的方法包括：通过旋转研磨石在晶片中形成薄化部分同时形成围绕所述薄化部分的斜面的晶片研磨步骤，其中在所述斜面的形成期间 所述研磨石的位置使得在所述磨石的所述倾斜面和所述相对侧之间总是具有空间，其中所述变薄部分比所述晶片的周边部分薄，并且其中所述斜面沿着并且限定内圆周 并且相对于所述晶片的主表面形成75°以上但小于90°的角度。 制造半导体器件的方法还包括在所述薄化部分中形成半导体器件的步骤。

公开(公告)号：US08097533B2

公开(公告)日：2012-01-17

申请号：US11561038

申请日：2006-11-17

申请人： Tamio Matsumura ,  Tadashi Tsujino

发明人： Tamio Matsumura ,  Tadashi Tsujino

IPC分类号： H01L21/44

摘要： A method of manufacturing a semiconductor device having a back surface electrode, including: a step of preparing a semiconductor wafer having a front surface and a back surface; a thermal processing step of forming a first metal layer on the back surface of the semiconductor wafer and executing thermal processing, thereby creating an ohmic contact between the semiconductor wafer and the first metal layer; and a step of forming a second metal layer of Ni on the back surface of the semiconductor substrate after the thermal processing step.

公开(公告)号：US5679204A

公开(公告)日：1997-10-21

申请号：US621527

申请日：1996-03-25

申请人： Masayuki Kobayashi ,  Kiyoshi Maeda ,  Masato Toyota ,  Hiroshi Ohnishi ,  Hiroshi Tanaka ,  Toshio Komemura ,  Tamio Matsumura

发明人： Masayuki Kobayashi ,  Kiyoshi Maeda ,  Masato Toyota ,  Hiroshi Ohnishi ,  Hiroshi Tanaka ,  Toshio Komemura ,  Tamio Matsumura

IPC分类号： C23F4/00 ,  H01J37/32 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/00

CPC分类号： H01J37/32477 ,  H01J37/32559

摘要： Components such as an earth plate, a gas introduction ring, and the like placed in a reaction chamber in a plasma apparatus are made of aluminum containing magnesium in a concentration of 2.2 to 2.8% by weight and are not coated with alumite. In addition, a heater incorporated in a section of the reaction chamber heats the section during a plasma cleaning process. Further, an electrical discharge chamber is also incorporated in the plasma apparatus for providing a plasma to the reaction chamber for efficient plasma cleaning of the apparatus.

摘要翻译： 在等离子体装置中放置在反应室中的诸如接地板，气体引入环等的部件由含有2.2至2.8重量％的镁的铝制成，并且未涂覆有耐氧化铝。 此外，加入到反应室的一部分中的加热器在等离子体清洗过程中加热该部分。 此外，在等离子体装置中还并入放电室，用于向反应室提供等离子体，用于对装置进行有效的等离子体清洗。

公开(公告)号：US06595428B2

公开(公告)日：2003-07-22

申请号：US09730601

申请日：2000-12-07

申请人： Koji Eguchi ,  Hiroshi Mochizuki ,  Tamio Matsumura

发明人： Koji Eguchi ,  Hiroshi Mochizuki ,  Tamio Matsumura

IPC分类号： G06K1906

CPC分类号： G06Q10/06 ,  G05B19/41865 ,  G05B2219/31388 ,  G05B2219/31432 ,  G05B2219/36115 ,  G05B2219/36371 ,  Y02P90/20

摘要： A process control method allowing an operator to readily confirm an order of operation processes includes steps of: reading magnetic data of a control card when the control card is inserted; transmitting completion data based on a lot number identified from read magnetic data to a host computer; receiving update data by the host computer; writing next process data in the received data as a visually recognizable image on the control card; and writing the next process data as a visually recognizable image based on process data identified by the read magnetic data when a predetermined time period passes without receiving update data.

公开(公告)号：US08183144B2

公开(公告)日：2012-05-22

申请号：US11561038

申请日：2006-11-17

申请人： Tamio Matsumura ,  Tadashi Tsujino

发明人： Tamio Matsumura ,  Tadashi Tsujino

IPC分类号： H01L21/44

CPC分类号： H01L21/28512 ,  H01L23/4827 ,  H01L24/27 ,  H01L24/83 ,  H01L2224/04026 ,  H01L2224/274 ,  H01L2224/27505 ,  H01L2224/83801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/3511 ,  H01L2924/01014 ,  H01L2924/00

摘要： A method of manufacturing a semiconductor device having a back surface electrode, including: a step of preparing a semiconductor wafer having a front surface and a back surface; a thermal processing step of forming a first metal layer on the back surface of the semiconductor wafer and executing thermal processing, thereby creating an ohmic contact between the semiconductor wafer and the first metal layer; and a step of forming a second metal layer of Ni on the back surface of the semiconductor substrate after the thermal processing step.

摘要翻译： 一种制造具有背面电极的半导体器件的方法，包括：制备具有前表面和后表面的半导体晶片的步骤; 在半导体晶片的后表面上形成第一金属层并进行热处理的热处理步骤，从而在半导体晶片与第一金属层之间形成欧姆接触; 以及在热处理步骤之后在半导体衬底的背面上形成Ni的第二金属层的步骤。