公开(公告)号：US07220678B2

公开(公告)日：2007-05-22

申请号：US10988042

申请日：2004-11-12

申请人： Yoshiyuki Nozawa ,  Kazuo Kasai ,  Hiroaki Kouno

发明人： Yoshiyuki Nozawa ,  Kazuo Kasai ,  Hiroaki Kouno

IPC分类号： H01L21/302

CPC分类号： H01L21/30655

摘要： A method for etching a silicon substrate is presented in which fast etching speed and etching structures with smooth and perpendicular wall surfaces are achieved. In the etching step, a constant electric power is applied to the silicon substrate to provide a bias potential. Using a mixture of SF6 gas and fluorocarbon gas, there is a step mainly for the progression of dry etching of the etching ground surface. Similarly, using a mixture gas, there is a step mainly for forming a protective layer on the structure surfaces which are perpendicular with respect to the etching ground surface. These two steps are repeated one after the other. In the step for dry etching, the mixture gas is 5–12 volume of fluorocarbon gas with respect to 100 volume SF6 gas. The mixture gas in the protective film formation step is a mixture of 2–5 volume of SF6 gas with respect to 100 volume fluorocarbon gas.

摘要翻译： 提出了一种用于蚀刻硅衬底的方法，其中实现了具有平滑和垂直壁表面的快速蚀刻速度和蚀刻结构。 在蚀刻步骤中，向硅衬底施加恒定电力以提供偏置电位。 使用SF 6气体和碳氟化合物气体的混合物，主要用于蚀刻底面的干蚀刻进行。 类似地，使用混合气体时，主要用于在相对于蚀刻接地面垂直的结构表面上形成保护层的步骤。 这两个步骤重复一遍。 在干蚀刻步骤中，混合气体相对于100体积SF 6气体为5-12体积的碳氟化合物气体。 保护膜形成步骤中的混合气体是相对于100体积碳氟化合物气体的2-5体积的SF 6气体的混合物。

公开(公告)号：US20070212888A1

公开(公告)日：2007-09-13

申请号：US11751601

申请日：2007-05-21

申请人： Kazuo Kasai ,  Yoshiyuki Nozawa ,  Hiroaki Kouno

发明人： Kazuo Kasai ,  Yoshiyuki Nozawa ,  Hiroaki Kouno

IPC分类号： H01L21/302

CPC分类号： H01L21/30655 ,  H01J37/32091 ,  H01J2237/334

摘要： Silicon substrate etching methods to keep surface unevenness of a structured surface formed by etching to within a fixed value. After an etching mask is formed on its surface, a silicon substrate S is mounted on a base 3 in an etching device 1. An etching gas (SF6) and a protective film forming gas (C4F8) are supplied to a chamber 2. The SF6 gas and the C4F8 gas supplied to the chamber are converted to plasma using a coil 16 to which high-frequency electrical power is applied. For example, by supplying a large amount of SF6 gas while high-frequency electrical power is applied to the base 3, dry etching primarily at the etching ground is advanced. Conversely, by supplying a large amount of C4F8 gas, protective film formation primarily to the etching structured surfaces is advanced. By repeating these steps, deep grooves with smooth structured surfaces can be formed.

摘要翻译： 硅衬底蚀刻方法将通过蚀刻形成的结构化表面的表面凹凸保持在固定值内。 在其表面上形成蚀刻掩模之后，将硅基板S安装在蚀刻装置1中的基底3上。蚀刻气体（SF 6 S）和保护膜形成气体（C _{4 8 <！ - SIPO - >供应到腔室2. SF 6气体和C 4 F 8 使用施加高频电力的线圈16将供给到腔室的气体转换成等离子体。 例如，通过在向基体3施加高频电力的同时供给大量的SF 6气体，主要在蚀刻地面进行干法蚀刻。 相反，通过供应大量的C 4 N 8 N 8气体，主要对蚀刻结构化表面形成保护膜。 通过重复这些步骤，可以形成具有平滑结构化表面的深槽。}

公开(公告)号：US20050130436A1

公开(公告)日：2005-06-16

申请号：US10988042

申请日：2004-11-12

申请人： Yoshiyuki Nozawa ,  Kazuo Kasai ,  Hiroaki Kouno

发明人： Yoshiyuki Nozawa ,  Kazuo Kasai ,  Hiroaki Kouno

IPC分类号： H01L21/3065 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/30655

摘要： A method for etching a silicon substrate is presented in which fast etching speed and etching structures with smooth and perpendicular wall surfaces are achieved. In the etching step, a constant electric power is applied to the silicon substrate to provide a bias potential. Using a mixture of SF6 gas and fluorocarbon gas, there is a step mainly for the progression of dry etching of the etching ground surface. Similarly, using a mixture gas, there is a step mainly for forming a protective layer on the structure surfaces which are perpendicular with respect to the etching ground surface. These two steps are repeated one after the other. In the step for dry etching, the mixture gas is 5-12 volume of fluorocarbon gas with respect to 100 volume SF6 gas. The mixture gas in the protective film formation step is a mixture of 2-5 volume of SF6 gas with respect to 100 volume fluorocarbon gas.

摘要翻译： 提出了一种用于蚀刻硅衬底的方法，其中实现了具有平滑和垂直壁表面的快速蚀刻速度和蚀刻结构。 在蚀刻步骤中，向硅衬底施加恒定电力以提供偏置电位。 使用SF 6气体和碳氟化合物气体的混合物，主要用于蚀刻底面的干蚀刻进行。 类似地，使用混合气体时，主要用于在相对于蚀刻接地面垂直的结构表面上形成保护层的步骤。 这两个步骤重复一遍。 在干蚀刻步骤中，混合气体相对于100体积SF 6气体为5-12体积的碳氟化合物气体。 保护膜形成步骤中的混合气体是相对于100体积碳氟化合物气体的2-5体积的SF 6气体的混合物。

公开(公告)号：US20110097903A1

公开(公告)日：2011-04-28

申请号：US12997942

申请日：2009-04-08

申请人： Yoshiyuki Nozawa ,  Takashi Yamamoto

发明人： Yoshiyuki Nozawa ,  Takashi Yamamoto

IPC分类号： H01L21/3065 ,  G06F17/00

CPC分类号： B81C1/00619 ,  B81B2203/033 ,  B81C1/00531 ,  B81C1/00626 ,  B81C2201/0132 ,  B81C2201/014 ,  H01L21/3065 ,  H01L21/30655

摘要： A method for manufacturing a silicon structure according to the present invention includes, in a so-called dry-etching process wherein gas-switching is employed, the steps of: etching a portion in the silicon region at a highest etching rate under a high-rate etching condition such that the portion does not reach the etch stop layer; subsequently etching under a transition etching condition in which an etching rate is decreased with time from the highest etching rate in the high-rate etching condition; and thereafter, etching the silicon region under a low-rate etching condition of a lowest etching rate in the transition etching condition.

摘要翻译： 根据本发明的制造硅结构的方法包括：在所谓的干法蚀刻工艺中采用气体切换，其步骤为：以高蚀刻速率蚀刻硅区中的部分， 速率蚀刻条件使得该部分不到达蚀刻停止层; 随后在高速蚀刻条件下从最高蚀刻速率随着时间从而蚀刻速率降低的过渡蚀刻条件下进行蚀刻; 然后在转变蚀刻条件下以最低蚀刻速率的低速蚀刻条件蚀刻硅区域。

公开(公告)号：US08546265B2

公开(公告)日：2013-10-01

申请号：US12997942

申请日：2009-04-08

申请人： Yoshiyuki Nozawa ,  Takashi Yamamoto

发明人： Yoshiyuki Nozawa ,  Takashi Yamamoto

IPC分类号： H01L21/3065 ,  B81C1/00

CPC分类号： B81C1/00619 ,  B81B2203/033 ,  B81C1/00531 ,  B81C1/00626 ,  B81C2201/0132 ,  B81C2201/014 ,  H01L21/3065 ,  H01L21/30655

摘要： A method for manufacturing a silicon structure according to the present invention includes, in a so-called dry-etching process wherein gas-switching is employed, the steps of: etching a portion in the silicon region at a highest etching rate under a high-rate etching condition such that the portion does not reach the etch stop layer; subsequently etching under a transition etching condition in which an etching rate is decreased with time from the highest etching rate in the high-rate etching condition; and thereafter, etching the silicon region under a low-rate etching condition of a lowest etching rate in the transition etching condition.

摘要翻译： 根据本发明的制造硅结构的方法包括：在所谓的干法蚀刻工艺中采用气体切换，其步骤为：以高蚀刻速率蚀刻硅区中的部分， 速率蚀刻条件使得该部分不到达蚀刻停止层; 随后在高速蚀刻条件下从最高蚀刻速率随着时间从而蚀刻速率降低的过渡蚀刻条件下进行蚀刻; 然后在转变蚀刻条件下以最低蚀刻速率的低速蚀刻条件蚀刻硅区域。

公开(公告)号：US20120006490A1

公开(公告)日：2012-01-12

申请号：US13145228

申请日：2009-12-10

申请人： Takashi Yamamoto ,  Yoshiyuki Nozawa

发明人： Takashi Yamamoto ,  Yoshiyuki Nozawa

IPC分类号： C23F1/08

CPC分类号： H01J37/321 ,  H01J37/32623

摘要： The present invention relates to an etching apparatus which is capable of etching the entire surface of a substrate uniformly even if the substrate is large-sized and in which deterioration of etching shape does not occur. An etching apparatus 1 has a chamber 2 having a plasma generating space 9 and a processing space 6, a coil 16 disposed on the outside of a portion corresponding to the plasma generating space 9, a platen 10 which is provided in the processing space 6 and on which a substrate K is to be placed, a processing gas supply mechanism 19 for supplying a processing gas into the plasma generating space 9, an RF power supply mechanism 17 for supplying RF power to the coil 16, and a power supply mechanism for platen 13 for supplying RF power to the platen 10. A cylindrical plasma density adjusting member 20 which is made of a conductive material grounded is fixedly provided on an inner wall of the chamber 2 between the plasma generating space 9 and the platen 10. While plasma passes through the plasma density adjusting member 20, the in-plane density of the plasma is equalized, and then the plasma is guided to the substrate K.

摘要翻译： 本发明涉及能够均匀地蚀刻基板的整个表面的蚀刻装置，即使基板尺寸大，并且不会发生蚀刻形状的劣化。 蚀刻装置1具有具有等离子体产生空间9和处理空间6的腔室2，设置在与等离子体产生空间9相对应的部分的外侧的线圈16，设置在处理空间6中的压板10和 在其上放置基板K的处理气体供给机构19，用于向等离子体产生空间9供给处理气体的处理气体供给机构19，用于向线圈16供给RF功率的RF电力供给机构17以及用于压板的供电机构 13，用于向压板10提供RF功率。由等离子体产生空间9和压板10之间的室2的内壁上固定地设置由接地的导电材料制成的圆柱形等离子体浓度调节构件20.当等离子体通过时 通过等离子体密度调节构件20使等离子体的面内密度相等，然后将等离子体引导到基板K.

公开(公告)号：US20090277872A1

公开(公告)日：2009-11-12

申请号：US12089474

申请日：2007-07-27

申请人： Takashi Yamamoto ,  Masahiko Tanaka ,  Yoshiyuki Nozawa ,  Shoichi Murakami

发明人： Takashi Yamamoto ,  Masahiko Tanaka ,  Yoshiyuki Nozawa ,  Shoichi Murakami

IPC分类号： B44C1/22 ,  C23F1/08

CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01J2237/3343 ,  H01L21/3065 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a plasma etching method in which a special area for detecting an end point needs not to be set and an equipment therefor. At an etching step of forming SF6 gas into plasma to etch an etching ground on a Si film, the step is configured by two steps of: a large-amount supply step of supplying a large amount of SF6 gas; and a small-amount supply step of supplying a small amount of SF6 gas. An end-point detecting processor 34 measures an emission intensity of Si or SiFx in the plasma at the small-amount supply step, and determines that an etching end point is reached when the measured emission intensity becomes equal to or less than a previously set reference value.

摘要翻译： 本发明涉及一种等离子体蚀刻方法，其中不需要设置用于检测终点的特殊区域及其设备。 在将SF 6气体形成等离子体以蚀刻Si膜上的蚀刻研磨的蚀刻步骤中，该步骤由以下两个步骤构成：供给大量SF 6气体的大量供给步骤; 以及供给少量的SF 6气体的小量供给工序。 终点检测处理器34在小量供给步骤中测量等离子体中的Si或SiFx的发射强度，并且当测量的发射强度变得等于或小于预先设定的参考值时，确定达到蚀刻终点 值。

公开(公告)号：US08628676B2

公开(公告)日：2014-01-14

申请号：US13638144

申请日：2011-05-25

申请人： Naoya Ikemoto ,  Takashi Yamamoto ,  Yoshiyuki Nozawa

发明人： Naoya Ikemoto ,  Takashi Yamamoto ,  Yoshiyuki Nozawa

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01L21/32137

摘要： A plasma etching method capable of forming a tapering etching structure having a smooth surface is provided. A fluorine-containing gas and a nitrogen gas are used and plasma is generated from these gases simultaneously, and a silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma and then a fluorine-containing gas and an oxygen-containing gas are used and plasma is generated from these gases simultaneously, and the silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma generated from the oxygen-containing gas, thereby forming a tapering etching structure H having a wide top opening width and a narrow bottom width.

摘要翻译： 提供能够形成具有光滑表面的锥形蚀刻结构的等离子体蚀刻方法。 使用含氟气体和氮气，同时从这些气体产生等离子体，并且通过等离子体蚀刻硅衬底K，同时通过等离子体在硅衬底K上形成耐蚀刻层，然后将氟 使用含气体和含氧气体，并且同时从这些气体产生等离子体，并且通过等离子体蚀刻硅衬底K，同时通过由氧气产生的等离子体在硅衬底K上形成耐蚀刻层 从而形成具有宽的顶部开口宽度和窄的底部宽度的锥形蚀刻结构H.

公开(公告)号：US08518283B2

公开(公告)日：2013-08-27

申请号：US12089474

申请日：2007-07-27

申请人： Takashi Yamamoto ,  Masahiko Tanaka ,  Yoshiyuki Nozawa ,  Shoichi Murakami

发明人： Takashi Yamamoto ,  Masahiko Tanaka ,  Yoshiyuki Nozawa ,  Shoichi Murakami

IPC分类号： G01R31/00

CPC分类号： H01J37/32963 ,  H01J37/32935 ,  H01J2237/3343 ,  H01L21/3065 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a plasma etching method in which a special area for detecting an end point needs not to be set and an equipment therefor. At an etching step of forming SF6 gas into plasma to etch an etching ground on a Si film, the step is configured by two steps of: a large-amount supply step of supplying a large amount of SF6 gas; and a small-amount supply step of supplying a small amount of SF6 gas. An end-point detecting processor 34 measures an emission intensity of Si or SiFx in the plasma at the small-amount supply step, and determines that an etching end point is reached when the measured emission intensity becomes equal to or less than a previously set reference value.

摘要翻译： 本发明涉及一种等离子体蚀刻方法，其中不需要设置用于检测终点的特殊区域及其设备。 在将SF 6气体形成等离子体以蚀刻Si膜上的蚀刻研磨的蚀刻步骤中，该步骤由以下两个步骤构成：供给大量SF 6气体的大量供给步骤; 以及供给少量的SF 6气体的小量供给工序。 终点检测处理器34在小量供给步骤中测量等离子体中的Si或SiFx的发射强度，并且当测量的发射强度变得等于或小于预先设定的参考值时，确定达到蚀刻终点 值。

公开(公告)号：US20130034961A1

公开(公告)日：2013-02-07

申请号：US13638144

申请日：2011-05-25

申请人： Naoya Ikemoto ,  Takashi Yamamoto ,  Yoshiyuki Nozawa

发明人： Naoya Ikemoto ,  Takashi Yamamoto ,  Yoshiyuki Nozawa

IPC分类号： H01L21/3065

CPC分类号： H01L21/3065 ,  H01L21/32137

摘要： A plasma etching method capable of forming a tapering etching structure having a smooth surface is provided. A fluorine-containing gas and a nitrogen gas are used and plasma is generated from these gases simultaneously, and a silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma and then a fluorine-containing gas and an oxygen-containing gas are used and plasma is generated from these gases simultaneously, and the silicon substrate K is etched by the plasma while an etch-resistant layer is formed on the silicon substrate K by the plasma generated from the oxygen-containing gas, thereby forming a tapering etching structure H having a wide top opening width and a narrow bottom width.

摘要翻译： 提供能够形成具有光滑表面的锥形蚀刻结构的等离子体蚀刻方法。 使用含氟气体和氮气，同时从这些气体产生等离子体，并且通过等离子体蚀刻硅衬底K，同时通过等离子体在硅衬底K上形成耐蚀刻层，然后将氟 使用含气体和含氧气体，并且同时从这些气体产生等离子体，并且通过等离子体蚀刻硅衬底K，同时通过由氧气产生的等离子体在硅衬底K上形成耐蚀刻层 从而形成具有宽的顶部开口宽度和窄的底部宽度的锥形蚀刻结构H.