公开(公告)号：US20080293169A1

公开(公告)日：2008-11-27

申请号：US12167616

申请日：2008-07-03

申请人： Kazuo TAWARAYAMA ,  Shunko Magoshi

发明人： Kazuo TAWARAYAMA ,  Shunko Magoshi

IPC分类号： H01L21/66

CPC分类号： G03F7/70616

摘要： A lithography evaluating method comprises preparing a substrate, the substrate including a semiconductor substrate and a wiring structure including at least one wiring layer formed on the semiconductor substrate, partitioning the substrate into a plurality of regions to be evaluated, and obtaining a value of property relating to the wiring structure previously, and evaluating proximity effect on each of the plurality of regions to be evaluated based on the value of the property relating to the wiring structure.

摘要翻译： 光刻评估方法包括准备衬底，所述衬底包括半导体衬底和布线结构，所述布线结构包括形成在所述半导体衬底上的至少一个布线层，将所述衬底划分成多个要评估的区域，并获得相关的属性值 并且基于与布线结构相关的属性的值来评估要评估的多个区域中的每一个上的接近效应。

公开(公告)号：US20110285975A1

公开(公告)日：2011-11-24

申请号：US13051864

申请日：2011-03-18

申请人： Kazuo TAWARAYAMA

发明人： Kazuo TAWARAYAMA

IPC分类号： G03B27/52

CPC分类号： G03B27/52 ,  G03B27/53 ,  G03F1/24 ,  G03F1/44 ,  G03F1/82 ,  G03F7/70925

摘要： According to one embodiment, there is provided a method of managing an EUV exposure mask to manage a cleaning period of the EUV exposure mask set in an exposure apparatus, including obtaining mark profile signals corresponding to two different directions of an alignment mark provided on the mask by irradiating the mark with EUV light and detecting light reflected by the mask, measuring dimensions of the mark in the two different directions from the obtained mark profile signals, calculating a difference between the measured dimensions in the two different directions, and determining the cleaning period of the mask based on the calculated difference.

摘要翻译： 根据一个实施例，提供了一种管理EUV曝光掩模以管理在曝光设备中设置的EUV曝光掩模的清洁周期的方法，包括获得对应于设置在掩模上的对准标记的两个不同方向的标记轮廓信号 通过用EUV光照射标记并检测由掩模反射的光，从所获得的标记轮廓信号测量两个不同方向上的标记的尺寸，计算两个不同方向上的测量尺寸之间的差，并且确定清洁周期 基于计算出的差异。

公开(公告)号：US20100193712A1

公开(公告)日：2010-08-05

申请号：US12696759

申请日：2010-01-29

申请人： Kazuo TAWARAYAMA

发明人： Kazuo TAWARAYAMA

IPC分类号： G21K5/02

CPC分类号： G03F7/70033

摘要： An extreme ultraviolet light source apparatus includes a main body including a supply section to which an extreme ultraviolet radiation seed is supplied, and an emission part configured to emit extreme ultraviolet, an excitation unit provided in the main body and configured to generate a plasma by exciting the extreme ultraviolet radiation seed, an optical condensing unit provided in the main body and configured to converge extreme ultraviolet, which is radiated from the plasma, at the emission part, a trap provided between the excitation unit and the optical condensing unit, a first positioning mechanism connected to the trap and configured to adjust at least one of a position and an angle of the trap, and a measuring unit configured to measure a far field distribution image of the plasma on the basis of the extreme ultraviolet which is emitted from the emission part, thereby to operate the first positioning mechanism.

摘要翻译： 一种极紫外光源装置包括：主体，其包括供给极紫外线辐射种子的供给部和被配置为发射极紫外线的发射部;激励部，设置在主体中，并且被配置为通过激励产生等离子体 所述极紫外辐射种子，设置在所述主体中并且被配置为在所述发射部分处会聚从所述等离子体辐射的极紫外线的聚光单元，设置在所述激发单元和所述光聚焦单元之间的陷阱，第一定位 连接到所述陷阱并被配置为调整所述陷阱的位置和角度中的至少一个的机构，以及测量单元，其被配置为基于从所述发射器发射的所述极紫外线来测量所述等离子体的远场分布图像 从而操作第一定位机构。

公开(公告)号：US20090141378A1

公开(公告)日：2009-06-04

申请号：US12332628

申请日：2008-12-11

申请人： Kazuo TAWARAYAMA ,  Tatsuhiko Higashiki ,  Iwao Higashikawa

发明人： Kazuo TAWARAYAMA ,  Tatsuhiko Higashiki ,  Iwao Higashikawa

IPC分类号： G02B7/185

CPC分类号： G21K1/062 ,  B82Y10/00 ,  B82Y40/00 ,  G02B17/0663 ,  G03F1/24 ,  G03F1/38

摘要： An optical element includes a substrate, a magnetostrictive film arranged on the substrate, a film thickness of the magnetostrictive film varying in accordance with intensity of a magnetic field, and a reflection film arranged on the magnetostrictive film and reflects light. An optical apparatus includes a stage including a holder provided with plural holes arranged in a carrying surface thereof for carrying an optical element provided with a magnetostrictive film arranged on a substrate, a film thickness of the magnetostrictive film varying in accordance with intensity of a magnetic field, and a reflection film arranged on the magnetostrictive film and reflecting light, plural magnetic field generation parts embedded in the plural holes, and a control mechanism for controlling the magnetic field generated by each of the plural magnetic field generation parts, and controlling the film thickness of the magnetostrictive film.

摘要翻译： 光学元件包括基板，设置在基板上的磁致伸缩膜，磁致伸缩膜的膜厚度根据磁场的强度而变化，以及布置在磁致伸缩膜上并反射光的反射膜。 一种光学装置，包括：台架，其具有设置有多个孔的保持器，所述保持器设置在其承载表面上，用于承载设置有设置在基板上的磁致伸缩膜的光学元件，所述磁致伸缩膜的膜厚度根据磁场强度而变化 以及布置在磁致伸缩膜上并反射光的反射膜，嵌入在多个孔中的多个磁场产生部分和用于控制由多个磁场产生部分中的每一个产生的磁场的控制机构，并且控制膜厚度 的磁致伸缩膜。

公开(公告)号：US20080137981A1

公开(公告)日：2008-06-12

申请号：US11947239

申请日：2007-11-29

申请人： Kazuo TAWARAYAMA

发明人： Kazuo TAWARAYAMA

IPC分类号： G06K9/40

CPC分类号： G03F7/70641

摘要： According to an aspect of the present invention, there is provided a method of monitoring a focus position on a surface of a wafer for an exposure apparatus which transfers by exposure a pattern formed on a mask onto the wafer, including tilting at least one of the mask and an exposure area on the wafer and performing exposure while the mask and the exposure area have a relative angle, to form two spurious resolution images of the pattern of the mask in the exposure area; measuring positions of the two spurious resolution images formed in the exposure area and detecting an optimal focus position of the exposure apparatus on the basis of a middle point between the measured positions of the two spurious resolution images.

摘要翻译： 根据本发明的一个方面，提供了一种监视用于曝光装置的晶片表面上的聚焦位置的方法，该曝光装置通过曝光将形成在掩模上的图案转印到晶片上，包括使至少一个 掩模和曝光区域，并且在掩模和曝光区域具有相对角度的同时执行曝光，以在曝光区域中形成掩模图案的两个伪分辨率图像; 测量在曝光区域中形成的两个伪分辨率图像的位置，并且基于两个伪分辨率图像的测量位置之间的中点检测曝光装置的最佳聚焦位置。