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    Aluminum alloy hollow material, aluminum alloy extruded pipe material for air conditioner piping and process for producing the same
    2.
    发明授权
    Aluminum alloy hollow material, aluminum alloy extruded pipe material for air conditioner piping and process for producing the same 有权
    铝合金中空材料，空调管道用铝合金挤压管材及其制造方法

    公开(公告)号：US06908520B2

    公开(公告)日：2005-06-21

    申请号：US09771309

    申请日：2001-01-26

    申请人： Kazuo Taguchi ,  Toshio Ohta

    发明人： Kazuo Taguchi ,  Toshio Ohta

    IPC分类号： C22C21/00 ,  C22F1/04

    CPC分类号： C22F1/04 ,  C22C21/00

    摘要： Disclosed are aluminum alloy hollow materials and processes for producing the same wherein an aluminum alloy hollow material is produced by subjecting an ingot of an aluminum alloy containing 0.3˜1.5 wt % Mn to port hole extrusion or port hole extrusion and drawing-elongation processing and wherein a difference in electric conductivity between individual portions in lengthwise direction of the hollow material is not more than 1.0 IACS %. According to the aluminum alloy hollow materials, preferential corrosion in welding potions in port hole extrusion can be prevented.

    摘要翻译： 公开了铝合金中空材料及其制造方法，其中通过对含有0.3〜1.5重量％Mn的铝合金锭进行端口挤出或端口孔挤出和拉伸 - 伸长加工来制造铝合金中空材料，其中 中空材料的长度方向各部分之间的电导率差不大于1.0IACS％。 根据铝合金中空材料，可以防止端口孔挤出中焊接部位的优先腐蚀。

    Extruded material of a free-cutting aluminum alloy excellent in embrittlement resistance at a high temperature
    3.
    发明授权
    Extruded material of a free-cutting aluminum alloy excellent in embrittlement resistance at a high temperature 有权
    在高温下耐脆性优异的自由切削铝合金挤压材料

    公开(公告)号：US08454766B2

    公开(公告)日：2013-06-04

    申请号：US12059904

    申请日：2008-03-31

    申请人： Kensuke Mori ,  Kazuo Taguchi

    发明人： Kensuke Mori ,  Kazuo Taguchi

    IPC分类号： C22C21/00 ,  C22C21/12

    CPC分类号： C22C21/12

    摘要： An extruded material of a free-cutting aluminum alloy excellent in embrittlement resistance at a high temperature, containing from 3 to 6% by mass of Cu and from 0.9 to 3% by mass of Bi with the balance being Aluminum and inevitable impurities, wherein a temperature for reducing the Charpy impact test value to half of the value at room temperature is 180° C. or more.

    摘要翻译： 含有3〜6质量％的Cu和0.9〜3质量％的Bi，余量为铝和不可避免的杂质的高温耐脆性优异的自由切削铝合金挤出材料，其中， 将夏比冲击试验值降低到室温下的一半值的温度为180℃以上。

    Semiconductor integrated circuit device and semiconductor memory using the same
    4.
    发明申请
    Semiconductor integrated circuit device and semiconductor memory using the same 审中-公开
    半导体集成电路器件和使用其的半导体存储器

    公开(公告)号：US20050082613A1

    公开(公告)日：2005-04-21

    申请号：US10917500

    申请日：2004-08-13

    申请人： Kazuo Taguchi

    发明人： Kazuo Taguchi

    IPC分类号： H01L21/28 ,  H01L21/8238 ,  H01L21/8244 ,  H01L21/84 ,  H01L27/092 ,  H01L27/11 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786

    CPC分类号： H01L29/78615 ,  H01L21/84 ,  H01L27/1104 ,  H01L27/1203 ,  H01L29/42384 ,  H01L29/78621

    摘要： Aspects of the invention can provide a semiconductor device including a transistor having a gate shape, which enables a source area and a body contact area to be connected without using wiring and with no gate part protruding to the source area side, and a semiconductor memory. The semiconductor device can have field regions, a transistor which includes a gate (L type gate), a gate insulating film directly below the gate, a body area directly below the gate insulating film, and a source area and a drain area formed on both sides which hold the body area in between. The gate can consist essentially of a first part extending along a channel width direction on the field region and a second part protruding from one end of the first part in the channel width direction to the drain side, and being formed in the L type gate in a plan view. A body contact area can be provided on the field region on the opposite side to the first part with the second part of the L type gate in between, and a low resistant layer is formed on a surface between the source area and the body contact area.

    摘要翻译： 本发明的方面可以提供一种半导体器件，其包括具有栅极形状的晶体管，其能够在不使用布线并且没有栅极部分突出到源极区侧的情况下连接源极区域和本体接触区域，以及半导体存储器。 半导体器件可以具有场区域，晶体管包括栅极（L型栅极），栅极正下方的栅极绝缘膜，栅极绝缘膜正下方的体区，以及形成在两者上的源极区和漏极区 身体区域之间的两侧。 栅极基本上可以由场区域上的沟道宽度方向延伸的第一部分和从沟道宽度方向上的第一部分的一端突出到漏极侧的第二部分形成在L型栅极中 一个平面图。 可以在与第一部分相反的一侧的场区域上设置体接触区域，其中L型栅极的第二部分在其间，并且在源区域和身体接触区域之间的表面上形成低阻力层 。

    Gas sensor
    5.
    发明授权
    Gas sensor 失效
    气体传感器

    公开(公告)号：US06327891B1

    公开(公告)日：2001-12-11

    申请号：US09257513

    申请日：1999-02-25

    申请人： Keiichi Noda ,  Kazuo Taguchi ,  Hisaharu Nishio ,  Katsuhisa Yabuta

    发明人： Keiichi Noda ,  Kazuo Taguchi ,  Hisaharu Nishio ,  Katsuhisa Yabuta

    IPC分类号： G01N2704

    CPC分类号： G01N27/407

    摘要： A gas sensor has a structure in which an insulator is disposed inside a metallic shell, and a sensor element is disposed inside the insulator. A cavity is formed in the insulator to surround the sensor element. A sealing material mainly formed of glass is charged into the cavity in order to establish sealing between the inner surface of the insulator and the outer surface of the sensor element. The sensor element has a rectangular cross section, and the inner surface of the insulator defining the cavity has a sectional profile corresponding to the sectional profile of the sensor element.

    摘要翻译： 气体传感器具有绝缘体设置在金属壳内部的结构，并且传感器元件设置在绝缘体的内部。 在绝缘体中形成腔体以包围传感器元件。 主要由玻璃形成的密封材料被填充到空腔中，以便在绝缘体的内表面和传感器元件的外表面之间建立密封。 传感器元件具有矩形横截面，并且限定空腔的绝缘体的内表面具有对应于传感器元件的截面轮廓的截面轮廓。

    Semiconductor device and semiconductor memory using the same
    6.
    发明申请
    Semiconductor device and semiconductor memory using the same 失效
    半导体器件和使用其的半导体存储器

    公开(公告)号：US20050077576A1

    公开(公告)日：2005-04-14

    申请号：US10924995

    申请日：2004-08-25

    申请人： Kazuo Taguchi

    发明人： Kazuo Taguchi

    IPC分类号： H01L27/10 ,  G11C11/412 ,  H01L21/8244 ,  H01L27/02 ,  H01L27/11 ,  H01L27/12 ,  H01L29/786 ,  G11C11/34 ,  G11C16/04 ,  H01L27/01

    CPC分类号： G11C11/412 ,  H01L27/0207 ,  H01L27/1104 ,  H01L27/1203

    摘要： Aspects of the invention can provide a semiconductor device and a semiconductor memory using the semiconductor device having a gate shape by which the width of the gate can be realized as designed even if relative shifts occur between the masks for forming the field regions and the gate patterns. The semiconductor device can include, in field regions, a gate (an H-type gate), a gate insulating film right under the gate, a body region right under the gate insulating film, and source/drain regions formed on both sides of and across the body region. The H-type gate can have a first section extending along the channel width direction on the field region, and a pair of second sections formed on both ends of the first section in the channel width direction and extending along the channel length direction, and is formed to be an H shape in plan view. Since a part of each of the pair of second sections of the H-type gate can be formed on a part of the field region having a constant length in the channel length direction, the channel width can be defined by the length of the first section.

    摘要翻译： 本发明的方面可以提供半导体器件和半导体存储器，其使用具有栅极形状的半导体器件，通过该栅极形状可以实现栅极的宽度，即使在用于形成场区域的掩模和栅极图案之间发生相对偏移 。 半导体器件可以在场区域中包括栅极（H型栅极），栅极正下方的栅极绝缘膜，栅极绝缘膜正下方的主体区域和形成在栅极绝缘膜两侧的源极/漏极区域 穿过身体区域。 H型栅极可以具有沿着场区域上的沟道宽度方向延伸的第一部分，以及在沟道宽度方向上形成在第一部分的两端并沿着沟道长度方向延伸的一对第二部分，并且是 在平面图中形成为H形。 由于H型栅极的一对第二部分中的每一个的一部分可以形成在沟道长度方向上具有恒定长度的场区域的一部分上，所以沟道宽度可以由第一部分的长度 。

    Process for preparing fine alkaline earth metal zeolite particles
    7.
    发明授权
    Process for preparing fine alkaline earth metal zeolite particles 失效
    制备细碱土金属沸石颗粒的方法

    公开(公告)号：US06831056B1

    公开(公告)日：2004-12-14

    申请号：US09868897

    申请日：2001-07-06

    申请人： Kazuo Oki ,  Hiroji Hosokawa ,  Mikio Sakaguchi ,  Hiroshi Kitagaito ,  Kazuo Taguchi ,  Hitoshi Takaya

    发明人： Kazuo Oki ,  Hiroji Hosokawa ,  Mikio Sakaguchi ,  Hiroshi Kitagaito ,  Kazuo Taguchi ,  Hitoshi Takaya

    IPC分类号： C11D714

    CPC分类号： C01B39/14 ,  C01B39/02 ,  C11D3/128

    摘要： A process for efficiently preparing fine zeolite particles comprising synthesizing zeolite in the presence of an alkaline earth metal-containing compound and/or with controlling the preparation process of zeolite, thereby giving fine zeolite particles being composed of crystalline aluminosilicate, the fine zeolite particles having a fine average primary particle size, being excellent in the cationic exchange properties and the oil-absorbing ability, having a fine average aggregate particle size, and being excellent in the dispersibility; fine zeolite particles obtainable by the above process; and a detergent composition comprising the fine zeolite particles, the detergent composition being excellent in the detergency.

    摘要翻译： 包括在含碱土金属的化合物的存在下合成沸石和/或控制沸石的制备方法的精细沸石颗粒的方法，从而得到由结晶硅铝酸盐构成的细沸石颗粒，所述细沸石颗粒具有 平均一次粒径优异，阳离子交换性和油吸收性优异，平均聚集体粒径均匀，分散性优异; 通过上述方法获得的细沸石颗粒; 以及包含细小沸石颗粒的洗涤剂组合物，洗涤剂组合物的去污力优异。

    Nonvolatile semiconductor memory device
    10.
    发明申请
    Nonvolatile semiconductor memory device 失效
    非易失性半导体存储器件

    公开(公告)号：US20060221668A1

    公开(公告)日：2006-10-05

    申请号：US11388056

    申请日：2006-03-23

    申请人： Kazuo Taguchi

    发明人： Kazuo Taguchi

    IPC分类号： G11C11/24

    CPC分类号： G11C16/0433

    摘要： A nonvolatile semiconductor memory device including: a first capacitor, one end of the first capacitor being connected to a floating node; a detection transistor, a gate electrode of the detection transistor being connected to the floating node; a second capacitor, one end of the second capacitor being connected to the floating node, and the other end of the second capacitor being connected to a drain of the detection transistor; and an auxiliary capacitor, one end of the auxiliary capacitor being connected to the floating node, wherein, at least during write operation, a control gate voltage is supplied to the other end of the first capacitor, a control drain voltage is supplied to the other end of the second capacitor, and a capacitance ratio correction voltage which is higher than a voltage of the floating node is supplied to the other end of the auxiliary capacitor.

    摘要翻译： 一种非易失性半导体存储器件，包括：第一电容器，所述第一电容器的一端连接到浮动节点; 检测晶体管，检测晶体管的栅电极连接到浮动节点; 第二电容器，第二电容器的一端连接到浮动节点，第二电容器的另一端连接到检测晶体管的漏极; 以及辅助电容器，辅助电容器的一端连接到浮动节点，其中，至少在写入操作期间，将控制栅极电压提供给第一电容器的另一端，将控制漏极电压提供给另一个 并且将高于浮动节点的电压的电容比校正电压提供给辅助电容器的另一端。