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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20100320562A1

    公开(公告)日：2010-12-23

    申请号：US12869323

    申请日：2010-08-26

    申请人： KAZUSHI KONO ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

    发明人： KAZUSHI KONO ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

    IPC分类号： H01L29/86

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered.A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.

    摘要翻译： 提供具有小占用面积的电直线状熔断器的半导体器件。 多个突出部10f形成在从电熔丝部10a的中间位置偏离的位置，更具体地，形成在远离通孔10e和靠近通孔10d的位置。 多个突出部20f形成在从电熔丝部20a的中间位置偏移的位置，更具体地，形成在远离通孔20d和靠近20e的位置。 也就是说，突出部分10f和突出部分20f被布置成Z字形。

    SEMICONDUCTOR DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20080164969A1

    公开(公告)日：2008-07-10

    申请号：US11958360

    申请日：2007-12-17

    申请人： Kazushi Kono ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

    发明人： Kazushi Kono ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

    IPC分类号： H01H37/76

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered.A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.

    摘要翻译： 提供具有小占用面积的电直线状熔断器的半导体器件。 多个突出部分10f形成在从电熔丝部分10a的中间位置偏移的位置，更具体地，形成在远离通孔10e和靠近通孔10d的位置。 多个突出部分20f形成在从电熔丝部分20a的中间位置移位的位置，更具体地，形成在远离通孔20d和靠近20e的位置。 也就是说，突出部分10f和突出部分20f被布置成Z字形。

    Semiconductor device
    3.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08487402B2

    公开(公告)日：2013-07-16

    申请号：US12869323

    申请日：2010-08-26

    申请人： Kazushi Kono ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

    发明人： Kazushi Kono ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

    IPC分类号： H01L29/00

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered.A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.

    摘要翻译： 提供具有小占用面积的电直线状熔断器的半导体器件。 多个突出部10f形成在从电熔丝部10a的中间位置偏离的位置，更具体地，形成在远离通孔10e和靠近通孔10d的位置。 多个突出部20f形成在从电熔丝部20a的中间位置偏移的位置，更具体地，形成在远离通孔20d和靠近20e的位置。 也就是说，突出部分10f和突出部分20f被布置成Z字形。

    SEMICONDUCTOR DEVICE
    4.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20110006392A1

    公开(公告)日：2011-01-13

    申请号：US12878977

    申请日：2010-09-09

    申请人： Kazushi Kono ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

    发明人： Kazushi Kono ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

    IPC分类号： H01L23/525

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered.A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.

    摘要翻译： 提供具有小占用面积的电直线状熔断器的半导体器件。 多个突出部10f形成在从电熔丝部10a的中间位置偏离的位置，更具体地，形成在远离通孔10e和靠近通孔10d的位置。 多个突出部20f形成在从电熔丝部20a的中间位置偏移的位置，更具体地，形成在远离通孔20d和靠近20e的位置。 也就是说，突出部分10f和突出部分20f被布置成Z字形。

    Semiconductor device
    6.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US07808076B2

    公开(公告)日：2010-10-05

    申请号：US11958360

    申请日：2007-12-17

    申请人： Kazushi Kono ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

    发明人： Kazushi Kono ,  Takeshi Iwamoto ,  Hisayuki Kato ,  Shigeki Obayashi ,  Toshiaki Yonezu

    IPC分类号： H01L29/00

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered.A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.

    摘要翻译： 提供具有小占用面积的电直线状熔断器的半导体器件。 多个突出部10f形成在从电熔丝部10a的中间位置偏离的位置，更具体地，形成在远离通孔10e和靠近通孔10d的位置。 多个突出部20f形成在从电熔丝部20a的中间位置偏移的位置，更具体地，形成在远离通孔20d和靠近20e的位置。 也就是说，突出部分10f和突出部分20f被布置成Z字形。

    Semiconductor integrated circuit
    7.
    发明授权
    Semiconductor integrated circuit 有权
    半导体集成电路

    公开(公告)号：US08723291B2

    公开(公告)日：2014-05-13

    申请号：US13592949

    申请日：2012-08-23

    申请人： Toshiaki Yonezu ,  Takeshi Iwamoto ,  Shigeki Obayashi ,  Masashi Arakawa ,  Kazushi Kono

    发明人： Toshiaki Yonezu ,  Takeshi Iwamoto ,  Shigeki Obayashi ,  Masashi Arakawa ,  Kazushi Kono

    IPC分类号： H01L23/62

    CPC分类号： H01L23/5256 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A semiconductor integrated circuit which can perform reliable relief processing using an electric fuse. The semiconductor integrated circuit includes a fuse wiring, a first electrode pad, a second electrode pad, a pollution-control layer, and a first via hole wiring and a second via hole wiring. The fuse wiring is cut by current exceeding a predetermined value. A first electrode pad is connected to one side of a fuse wiring, a second electrode pad is connected to the other of a fuse wiring, a pollution-control layer is formed in the upper layer and the lower layer of the fuse wiring via an insulating layer. In the fuse wiring, second via hole wiring of a pair is formed in the outside of a first via hole wiring so that the first the via hole wiring is surrounded.

    摘要翻译： 一种半导体集成电路，其可以使用电熔丝执行可靠的浮雕处理。 半导体集成电路包括熔丝布线，第一电极焊盘，第二电极焊盘，污染控制层以及第一通孔布线和第二通孔布线。 保险丝布线被超过预定值的电流切断。 第一电极焊盘连接到熔丝布线的一侧，第二电极焊盘连接到熔丝布线的另一侧，污染控制层通过绝缘体形成在熔丝布线的上层和下层中 层。 在熔丝配线中，在第一通孔配线的外侧形成有一对的第二通孔配线，以使第一通孔配线被包围。