公开(公告)号：US20100176398A1

公开(公告)日：2010-07-15

申请号：US12749063

申请日：2010-03-29

申请人： Kazushige Takechi ,  Hiroshi Kanou ,  Mitsuru Nakata

发明人： Kazushige Takechi ,  Hiroshi Kanou ,  Mitsuru Nakata

IPC分类号： H01L29/66

CPC分类号： G02F1/13454 ,  G02F1/133382 ,  H01L27/12

摘要： An electronic device of the present invention includes a first substrate provided with a thin film active element, having a thickness of 200 μm or lower, and a second substrate formed with a high thermal conductivity portion. The second substrate is applied to one surface of the two surfaces of the first substrate, i.e., the surface being the side other than the side that formed with the thin film active element. The thin film active element has a maximum power consumption of 0.01 to 1 mW. The high thermal conductivity portion is a region that corresponds to the position of the thin film active element and whose thermal conductivity falls within the range from 0.1 to 4 W/cm·deg.

摘要翻译： 本发明的电子器件包括具有厚度为200μm以下的薄膜有源元件的第一基板和形成有高导热率部分的第二基板。 将第二基板施加到第一基板的两个表面的一个表面，即除了用薄膜有源元件形成的侧面以外的表面。 薄膜有源元件的最大功耗为0.01至1mW。 高导热率部分是与薄膜有源元件的位置对应的区域，其导热率在0.1〜4W / cm·℃的范围内。

公开(公告)号：US07989805B2

公开(公告)日：2011-08-02

申请号：US12749063

申请日：2010-03-29

申请人： Kazushige Takechi ,  Hiroshi Kanou ,  Mitsuru Nakata

发明人： Kazushige Takechi ,  Hiroshi Kanou ,  Mitsuru Nakata

IPC分类号： H01L29/04 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0376

CPC分类号： G02F1/13454 ,  G02F1/133382 ,  H01L27/12

摘要： An electronic device of the present invention includes a first substrate provided with a thin film active element, having a thickness of 200 μm or lower, and a second substrate formed with a high thermal conductivity portion. The second substrate is applied to one surface of the two surfaces of the first substrate, i.e., the surface being the side other than the side that formed with the thin film active element. The thin film active element has a maximum power consumption of 0.01 to 1 mW. The high thermal conductivity portion is a region that corresponds to the position of the thin film active element and whose thermal conductivity falls within the range from 0.1 to 4 W/cm·deg.

摘要翻译： 本发明的电子器件包括具有厚度为200μm以下的薄膜有源元件的第一基板和形成有高导热率部分的第二基板。 将第二基板施加到第一基板的两个表面的一个表面，即除了用薄膜有源元件形成的侧面以外的表面。 薄膜有源元件的最大功耗为0.01至1mW。 高导热率部分是与薄膜有源元件的位置对应的区域，其导热率在0.1〜4W / cm·℃的范围内。

公开(公告)号：US07714327B2

公开(公告)日：2010-05-11

申请号：US11508452

申请日：2006-08-23

申请人： Kazushige Takechi ,  Hiroshi Kanou ,  Mitsuru Nakata

发明人： Kazushige Takechi ,  Hiroshi Kanou ,  Mitsuru Nakata

IPC分类号： H01L29/04 ,  H01L31/20 ,  H01L31/036 ,  H01L31/0376

CPC分类号： G02F1/13454 ,  G02F1/133382 ,  H01L27/12

摘要： An electronic device of the present invention includes a first substrate provided with a thin film active element, having a thickness of 200 μm or lower, and a second substrate formed with a high thermal conductivity portion. The second substrate is applied to one surface of the two surfaces of the first substrate, i.e., the surface being the side other than the side that formed with the thin film active element. The thin film active element has a maximum power consumption of 0.01 to 1 mW. The high thermal conductivity portion is a region that corresponds to the position of the thin film active element and whose thermal conductivity falls within the range from 0.1 to 4 W/cm·deg.

摘要翻译： 本发明的电子器件包括设置有厚度为200μm以下的薄膜有源元件的第一基板和形成有高导热率部分的第二基板。 将第二基板施加到第一基板的两个表面的一个表面，即除了用薄膜有源元件形成的侧面以外的表面。 薄膜有源元件的最大功耗为0.01至1mW。 高导热率部分是与薄膜有源元件的位置对应的区域，其导热率在0.1〜4W / cm·℃的范围内。

公开(公告)号：US20070049061A1

公开(公告)日：2007-03-01

申请号：US11508452

申请日：2006-08-23

申请人： Kazushige Takechi ,  Hiroshi Kanou ,  Mitsuru Nakata

发明人： Kazushige Takechi ,  Hiroshi Kanou ,  Mitsuru Nakata

IPC分类号： H05K1/00

CPC分类号： G02F1/13454 ,  G02F1/133382 ,  H01L27/12

摘要： An electronic device of the present invention includes a first substrate provided with a thin film active element, having a thickness of 200 μm or lower, and a second substrate formed with a high thermal conductivity portion. The second substrate is applied to one surface of the two surfaces of the first substrate, i.e., the surface being the side other than the side that formed with the thin film active element. The thin film active element has a maximum power consumption of 0.01 to 1 mW. The high thermal conductivity portion is a region that corresponds to the position of the thin film active element and whose thermal conductivity falls within the range from 0.1 to 4 W/cm·deg.

摘要翻译： 本发明的电子器件包括具有厚度为200μm或更低的薄膜有源元件的第一衬底和形成有高导热率部分的第二衬底。 将第二基板施加到第一基板的两个表面的一个表面，即除了用薄膜有源元件形成的侧面以外的表面。 薄膜有源元件的最大功耗为0.01至1mW。 高导热率部分是与薄膜有源元件的位置相对应的区域，其导热率在0.1至4W / cm 2的范围内。

公开(公告)号：US20050236623A1

公开(公告)日：2005-10-27

申请号：US11111762

申请日：2005-04-22

申请人： Kazushige Takechi ,  Hiroshi Kanou

发明人： Kazushige Takechi ,  Hiroshi Kanou

IPC分类号： G06K19/077 ,  H01L21/336 ,  H01L21/77 ,  H01L25/04 ,  H01L25/18 ,  H01L27/12 ,  H01L29/10 ,  H01L29/786

CPC分类号： H01L27/1274 ,  H01L24/18 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1266 ,  H01L29/78603 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/00

摘要： An integrated circuit is formed on a flexible substrate by using an amorphous semiconductor thin film, or a polycrystalline or a monocrystalline semiconductor thin film crystallized by laser annealing. A plurality of such flexible integrated circuit boards and mounted on a separate support substrate. This can enhance the mechanical strength of devices, such as an IC card and a liquid crystal display, and allow those devices to be manufactured at a low cost. It is also possible to provide a semiconductor device with a higher performance, on which a flexible integrated circuit board and an IC chip made from a silicon and/or glass wafer. Adhering a film substrate having a high thermal conductivity, such as a metal, to the bottom side of the flexible integrated circuit board improves the heat discharging characteristic of the integrated circuit and suppress the problem of self-heating.

摘要翻译： 通过使用非晶半导体薄膜或通过激光退火结晶的多晶或单晶半导体薄膜，在柔性基板上形成集成电路。 多个这样的柔性集成电路板并且安装在单独的支撑基板上。 这可以提高诸如IC卡和液晶显示器之类的装置的机械强度，并且以低成本制造这些装置。 还可以提供具有更高性能的半导体器件，其上由硅和/或玻璃晶片制成柔性集成电路板和IC芯片。 将具有高导热性的薄膜基材（例如金属）粘合到柔性集成电路板的底侧可以提高集成电路的放热特性，并且抑制自热的问题。

公开(公告)号：USD450329S1

公开(公告)日：2001-11-13

申请号：US29125167

申请日：2000-06-20

申请人： Hiroshi Kanou ,  Yuujirou Morita

设计人： Hiroshi Kanou ,  Yuujirou Morita

公开(公告)号：USD446221S1

公开(公告)日：2001-08-07

申请号：US29122444

申请日：2000-04-28

申请人： Hiroshi Kanou ,  Yuujirou Morita

设计人： Hiroshi Kanou ,  Yuujirou Morita

公开(公告)号：US07088050B2

公开(公告)日：2006-08-08

申请号：US11074065

申请日：2005-03-08

申请人： Osamu Ishibashi ,  Hiroshi Hayama ,  Hiroshi Kanou ,  Shunji Noda

发明人： Osamu Ishibashi ,  Hiroshi Hayama ,  Hiroshi Kanou ,  Shunji Noda

IPC分类号： G09G3/10

CPC分类号： G02F1/13452 ,  G09G2300/0408

摘要： An object is to narrow the width a frame part provided to a display device. The display device of the present invention comprises: a main substrate having display pixels being arranged in matrix, a scanning line electrode array, a signal line electrode array, and a frame part formed in an edge of the substrate along the scanning line electrode array and the signal line electrode array; a scanning line driving element mounted to the frame part along the scanning line electrode array; a signal line driving element mounted to the frame part along the signal line electrode array; and a flexible flat cable for supplying a signal and a power to the driving circuits of the scanning line driving element and the signal line driving element. The width of the frame part to which the signal line driving element is mounted is approximate to the width of the signal line driving element, and the width of the frame part to which the scanning line driving element is mounted is approximate to the width of the scanning line driving element. The length of at least the scanning line driving element or the signal line driving element is set shorter than the respective frame part so as to keep a space for mounting the flexible flat cable.

摘要翻译： 目的是缩小提供给显示装置的框架部分的宽度。 本发明的显示装置包括：沿着扫描线电极阵列形成有沿矩阵形成的显示像素的主基板，扫描线电极阵列，信号线电极阵列和形成在基板的边缘的框部， 信号线电极阵列; 沿扫描线电极阵列安装到框架部分的扫描线驱动元件; 信号线驱动元件，沿信号线电极阵列安装到框架部分; 以及用于向扫描线驱动元件和信号线驱动元件的驱动电路提供信号和电力的柔性扁平电缆。 安装信号线驱动元件的框架部分的宽度近似于信号线驱动元件的宽度，并且安装扫描线驱动元件的框架部分的宽度接近于 扫描线驱动元件。 至少扫描线驱动元件或信号线驱动元件的长度被设定为比相应的框架部分短，以便保持用于安装柔性扁平电缆的空间。

公开(公告)号：US06891196B2

公开(公告)日：2005-05-10

申请号：US10617035

申请日：2003-07-11

申请人： Hiroaki Tanaka ,  Hirotaka Yamaguchi ,  Wakahiko Kaneko ,  Michiaki Sakamoto ,  Satoshi Ihida ,  Takasuke Hayase ,  Tae Yoshikawa ,  Hiroshi Kanou

发明人： Hiroaki Tanaka ,  Hirotaka Yamaguchi ,  Wakahiko Kaneko ,  Michiaki Sakamoto ,  Satoshi Ihida ,  Takasuke Hayase ,  Tae Yoshikawa ,  Hiroshi Kanou

IPC分类号： G02F1/1345 ,  G02F1/1333 ,  G02F1/1343 ,  G02F1/136 ,  G02F1/1368 ,  G09F9/00 ,  G09F9/30 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/12 ,  G02F1/134363 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1288

摘要： An active matrix substrate of a channel protection type having a gate electrode, a drain electrode and a pixel electrode is isolated in each layer by insulating films. The active matrix substrate is to be prepared by four masks. A gate electrode layer, a gate insulating film and an a-Si layer are processed to the same shape on a transparent insulating substrate to form a gate electrode layer and a TFF area. A drain electrode layer is formed by a first passivation film with the first passivation film formed as an upper layer. In a second passivation film, formed above the first passivation film, are bored a first opening through the first and second passivation films and a second opening through the second passivation film. A wiring connection layer is formed by ITO provided as an uppermost layer. A storage capacitance unit, including the first and second passivation films sandwiched between the gate electrode and an electrode layer formed as a co-layer with respect to the gate electrode, is connected to the pixel electrode.

摘要翻译： 通过绝缘膜在每一层隔离具有栅电极，漏电极和像素电极的沟道保护型有源矩阵基板。 有源矩阵基板由四个掩模制成。 栅极电极层，栅极绝缘膜和a-Si层在透明绝缘基板上被加工成相同的形状以形成栅极电极层和TFF区域。 漏极电极层由第一钝化膜形成，第一钝化膜形成为上层。 在形成在第一钝化膜之上的第二钝化膜中，穿过第一和第二钝化膜的第一开口和通过第二钝化膜的第二开口。 由设置为最上层的ITO形成布线连接层。 夹持在栅电极和相对于栅电极形成为共层的电极层之间的第一和第二钝化膜的存储电容单元连接到像素电极。

公开(公告)号：USD456423S1

公开(公告)日：2002-04-30

申请号：US29133728

申请日：2000-12-06

申请人： Hiroshi Kanou ,  Hiromi Kobori

设计人： Hiroshi Kanou ,  Hiromi Kobori