公开(公告)号：US07937141B1

公开(公告)日：2011-05-03

申请号：US09958113

申请日：2000-04-06

申请人： Kazutaka Inoue ,  Hirotoshi Adachi

发明人： Kazutaka Inoue ,  Hirotoshi Adachi

IPC分类号： A61N1/30

CPC分类号： A61N1/30

摘要： A device for iontophoresis that reduces irritation at the beginning of energization and efficiently supplies an amount of current required for drug administration in a predetermined length of time, is provided. With the device for iontophoresis, the oscillation frequency and duty cycle of a transistor 15 are adjusted at the beginning of energization, thereby controlling a back electromotive force developed across a coil 13 to gradually increase the output voltage. The microcomputer 12 controls the transistor 15 so as to receive signals from an output voltage detecting circuit that is formed of resistors 23 and 24 and an output current detecting circuit that is formed of resistors 25 and 26 and a capacitor 27, preventing an increasing of the output voltage when the detected output current reaches a limiting value, and preventing an increasing of the output current when the detected output voltage reaches a limiting value.

摘要翻译： 提供一种用于离子电渗疗法的装置，其在通电开始时减少刺激，并且在预定时间长度内有效地提供药物施用所需的电流量。 利用离子电渗法的装置，在通电开始时调整晶体管15的振荡频率和占空比，由此控制在线圈13上产生的反电动势，逐渐增加输出电压。 微型计算机12控制晶体管15以接收来自由电阻器23和24形成的输出电压检测电路的信号和由电阻器25和26以及电容器27形成的输出电流检测电路，从而防止 当检测到的输出电流达到极限值时，输出电压，并且当检测到的输出电压达到极限值时防止输出电流的增加。

公开(公告)号：US06546282B1

公开(公告)日：2003-04-08

申请号：US09556174

申请日：2000-04-20

申请人： Kazutaka Inoue ,  Hirotoshi Adachi ,  Hiroyuki Maeda ,  Naruhito Higo

发明人： Kazutaka Inoue ,  Hirotoshi Adachi ,  Hiroyuki Maeda ,  Naruhito Higo

IPC分类号： A61N130

CPC分类号： A61N1/30

摘要： A handling-convenient device for iontophoresis, which can supply spotted regions suffering from disease with a proper quantity of current at the same time. The device for iontophoresis includes a power source apparatus having a plurality of output terminals outputting currents of predetermined values adjusted by a plurality of current control circuits, respectively, and a plurality of connecting cords, each cord being connected with one of the output terminals of the power source apparatus at one end thereof and being connected with an electrode structure at the other end. The connecting cords are attached with the power source apparatus in a mutually attachable/detachable fashion via connection terminals. The power source apparatus has an LED located thereon to notify of the energization status of the device and a power switch externally located thereon to control starts and stops of the apparatus.

摘要翻译： 用于离子电渗疗法的便于操作的装置，可同时为适量的电流供应患有疾病的斑点。 用于离子电渗疗法的装置包括：电源装置，具有多个输出端子，分别输出由多个电流控制电路调节的预定值的电流;以及多个连接线，每个电线与其中一个输出端子 电源装置的另一端与电极结构连接。 连接线通过连接端子以可相互连接/拆卸的方式与动力源装置连接。 电源装置具有位于其上的LED，用于通知设备的通电状态和外部位于其上的电源开关以控制设备的启动和停止。

公开(公告)号：US06597947B1

公开(公告)日：2003-07-22

申请号：US09958599

申请日：2001-10-12

申请人： Kazutaka Inoue ,  Hirotoshi Adachi ,  Hiroyuki Maeda ,  Naruhito Higo

发明人： Kazutaka Inoue ,  Hirotoshi Adachi ,  Hiroyuki Maeda ,  Naruhito Higo

IPC分类号： A61N130

CPC分类号： A61N1/30

摘要： The present invention provides an iontophoresis device allowing effective and continuous absorption for a long period. The iontophoresis device comprises the first electrode structure (100a) and the second electrode structure (110a) each having a hydrophilic conductive layer (102a, 112a) containing active ingredient and an electrode member (101a, 111a), and a power supply (120a) having polarity inverting means for switching over a current direction between the two electrode structures, wherein at least one of the first and the second electrode structures contains chloride ions and before administration, a chloride-ion content (P mg) is within a range satisfying the following equation: 1.0×(I×T×0.022)≦P wherein T represents a polarity inverting time (min) until polarity is inverted after energization in a certain direction and I represents an average current (mA).

摘要翻译： 本发明提供一种允许长时间有效且持续吸收的离子电渗装置。 离子电渗装置包括：第一电极结构（100a）和第二电极结构（110a），每个第一电极结构具有含有活性成分的亲水性导电层（102a，112a）和电极部件（101a，111a）;以及电源（120a） 具有用于切换两个电极结构之间的电流方向的极性反转装置，其中第一和第二电极结构中的至少一个包含氯离子并且在给药之前，氯离子含量（P mg）在满足 以下等式：其中T表示在一定方向通电之后极性反转的极性反转时间（min），I表示平均电流（mA）。

公开(公告)号：US08890239B2

公开(公告)日：2014-11-18

申请号：US13884221

申请日：2011-07-26

申请人： Seiji Yaegashi ,  Makoto Kiyama ,  Mitsunori Yokoyama ,  Kazutaka Inoue ,  Masaya Okada ,  Yu Saitoh

发明人： Seiji Yaegashi ,  Makoto Kiyama ,  Mitsunori Yokoyama ,  Kazutaka Inoue ,  Masaya Okada ,  Yu Saitoh

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/417 ,  H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/20

CPC分类号： H01L29/7802 ,  H01L29/0649 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66462 ,  H01L29/66712 ,  H01L29/7788 ,  H01L29/7789

摘要： In a vertical semiconductor device including a channel in an opening, a semiconductor device whose high-frequency characteristics can be improved and a method for producing the semiconductor device are provided. The semiconductor device includes n-type GaN-based drift layer 4/p-type GaN-based barrier layer 6/n-type GaN-based contact layer 7. An opening 28 extends from a top layer and reaches the n-type GaN-based drift layer. The semiconductor device includes a regrown layer 27 located so as to cover the opening, the regrown layer 27 including an electron drift layer 22 and an electron supply layer 26, a source electrode S, a drain electrode D, and a gate electrode G located on the regrown layer. Assuming that the source electrode serving as one electrode and the drain electrode serving as the other electrode constitute a capacitor, the semiconductor device includes a capacitance-decreasing structure that decreases the capacitance of the capacitor.

摘要翻译： 在包括开口中的沟道的垂直半导体器件中，提供了可以提高其高频特性的半导体器件和制造半导体器件的方法。 半导体器件包括n型GaN基漂移层4 / p型GaN基阻挡层6 / n型GaN基接触层7.开口28从顶层延伸并到达n型GaN- 基漂移层。 半导体器件包括以覆盖开口的方式定位的再生长层27，包括电子漂移层22和电子供给层26的再生长层27，源电极S，漏电极D和位于 再生长层。 假设用作一个电极的源极和用作另一个电极的漏电极构成电容器，则半导体器件包括降低电容器的电容的电容减小结构。

公开(公告)号：US08242512B2

公开(公告)日：2012-08-14

申请号：US12987426

申请日：2011-01-10

申请人： Fumikazu Yamaki ,  Kazutaka Inoue

发明人： Fumikazu Yamaki ,  Kazutaka Inoue

IPC分类号： H01L29/15 ,  H01L31/0312

CPC分类号： H01L29/7787 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/42316 ,  H01L29/66462

摘要： A compound semiconductor device includes: an electron transit layer made of GaN; a channel layer made of AlGaN; a source electrode, a gate electrode and a drain electrode that are provided on the channel layer; a cap layer that is provided at least between the source electrode and the gate electrode and between the gate electrode and the drain electrode and is made of GaN; a recess portion that is provided in the cap layer between the gate electrode and the drain electrode; and a thick portion that is provided in the cap layer between the recess portion and the drain electrode and has a thickness larger than the recess portion.

摘要翻译： 化合物半导体器件包括：由GaN制成的电子转移层; 由AlGaN制成的沟道层; 设置在沟道层上的源电极，栅电极和漏电极; 至少设置在所述源电极和所述栅电极之间以及所述栅电极和所述漏电极之间并且由GaN制成的盖层; 设置在所述栅电极和所述漏电极之间的所述盖层中的凹部; 以及设置在所述凹部和所述漏电极之间的所述盖层中并且具有比所述凹部大的厚度的厚壁部。

公开(公告)号：US07803964B2

公开(公告)日：2010-09-28

申请号：US11815664

申请日：2006-02-06

申请人： Shigeho Tanaka ,  Tohru Endoh ,  Haruki Sato ,  Toshihiro Sato ,  Kazutaka Inoue

发明人： Shigeho Tanaka ,  Tohru Endoh ,  Haruki Sato ,  Toshihiro Sato ,  Kazutaka Inoue

IPC分类号： C07C69/52

CPC分类号： C07C67/04 ,  C07C69/54

摘要： Disclosed is a method for synthesizing t-butyl (meth)acrylate at low cost. Specifically, disclosed is a method for synthesizing a carboxylic acid ester by performing an addition reaction between isobutylene and (meth)acrylic acid in the presence of an acidic catalyst. This method includes the steps of: (A) performing a dehydration decomposition reaction of t-butyl alcohol in the presence of a first acidic catalyst; (B) obtaining crude isobutylene gas by separating at least water from a produced gas obtained in the step A; (C) absorbing the crude isobutylene gas in an absorption solvent containing (meth)acrylic acid; and (D) producing t-butyl (meth)acrylate by performing the addition reaction by bringing the absorption solvent which has absorbed the crude isobutylene gas into contact with a second acidic catalyst.

摘要翻译： 公开了以低成本合成（甲基）丙烯酸叔丁酯的方法。 具体地，公开了通过在酸性催化剂的存在下进行异丁烯和（甲基）丙烯酸之间的加成反应来合成羧酸酯的方法。 该方法包括以下步骤：（A）在第一酸性催化剂的存在下进行叔丁醇的脱水分解反应; （B）通过从步骤A中获得的产生的气体中至少分离出水来获得粗异丁烯气体; （C）在含有（甲基）丙烯酸的吸收溶剂中吸收粗异丁烯气体; 和（D）通过使吸收了粗异丁烯气体的吸收溶剂与第二酸性催化剂接触进行加成反应来生产（甲基）丙烯酸叔丁酯。

公开(公告)号：US5033468A

公开(公告)日：1991-07-23

申请号：US456963

申请日：1989-12-26

申请人： Mitunori Takeuchi ,  Minoru Sasaki ,  Kazutaka Inoue

发明人： Mitunori Takeuchi ,  Minoru Sasaki ,  Kazutaka Inoue

IPC分类号： A61N1/08 ,  A61N1/36

CPC分类号： A61N1/36014 ,  A61N1/08 ,  A61N1/025

摘要： A bio-stimulating device including a signal controller unit for outputting at least a high frequency digital signal and a low frequency digital signal, a coil unit for changing the voltage of the digital signals input thereto from the control unit and having a first voltage changing function for high frequency digital signals and a second voltage changing function for low frequency digital signals, and an electrode unit including at least one electrode to be attached to a body wherein different kinds of electric pulses having different frequencies from each other can be generated, the size minimized, and energy saved.

摘要翻译： 一种生物刺激装置，包括用于输出至少高频数字信号和低频数字信号的信号控制器单元，线圈单元，用于改变从控制单元输入的数字信号的电压，并具有第一电压变化功能 用于低频数字信号的高频数​​字信号和第二电压变化功能;以及电极单元，其包括至少一个要连接到主体的电极，其中可以产生具有彼此不同频率的不同种类的电脉冲，尺寸 最小化，节能。

公开(公告)号：US4331824A

公开(公告)日：1982-05-25

申请号：US166681

申请日：1980-07-07

申请人： Minoru Ikeda ,  Teruhiko Yoshioka ,  Kazutaka Inoue

发明人： Minoru Ikeda ,  Teruhiko Yoshioka ,  Kazutaka Inoue

IPC分类号： C07C1/20 ,  C07C1/00 ,  C07C1/213 ,  C07C1/24 ,  C07C7/148 ,  C07C11/09 ,  C07C67/00

CPC分类号： C07C1/213 ,  C07C1/24 ,  C07C2531/08

摘要： Highly purified isobutylene, up to 99.9% pure, is obtained by treating a reaction mixture such as that recovered from an isobutylene-containing hydrocarbon mixture also containing an aqueous solution of an aliphatic carboxylic acid having 1 to 6 carbon atoms that has been reacted in an acidic ion exchanger and from which the unreacted hydrocarbons have been removed. The operative ingredients of the treated mixture are tertiary butyl alcohol, secondary butyl alcohol and their esters of the carboxylic acid employed. When treated with an acidic ion exchanger the carboxylic acid is first formed which inhibits the secondary butyl alcohol and secondary butyl ester of the acid from decomposing and high purity isobutylene is recovered therefrom by conventional distillation.

摘要翻译： 通过处理反应混合物，例如从含异丁烯的烃混合物中回收的高纯度异丁烯，其还含有具有1至6个碳原子的脂族羧酸的水溶液，该水溶液在 酸性离子交换剂，并且从中除去未反应的烃。 经处理的混合物的操作成分是叔丁醇，仲丁醇及其所用羧酸的酯。 当用酸性离子交换剂处理时，首先形成羧酸，其抑制酸的仲丁醇和仲丁酯的分解，并通过常规蒸馏从其中回收高纯度异丁烯。

公开(公告)号：US08969920B2

公开(公告)日：2015-03-03

申请号：US13824248

申请日：2011-07-06

申请人： Makoto Kiyama ,  Yu Saitoh ,  Masaya Okada ,  Masaki Ueno ,  Seiji Yaegashi ,  Kazutaka Inoue ,  Mitsunori Yokoyama

发明人： Makoto Kiyama ,  Yu Saitoh ,  Masaya Okada ,  Masaki Ueno ,  Seiji Yaegashi ,  Kazutaka Inoue ,  Mitsunori Yokoyama

IPC分类号： H01L29/66 ,  H01L29/778 ,  H01L29/20 ,  H01L29/423

CPC分类号： H01L29/778 ,  H01L29/2003 ,  H01L29/4236 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7788 ,  H01L29/7789

摘要： A vertical semiconductor device in which pinch-off characteristics and breakdown voltage characteristics can be stably improved by fixing the electric potential of a p-type GaN barrier layer with certainty is provided. The semiconductor device includes a GaN-based stacked layer having an opening, a regrown layer including a channel located so as to cover a wall surface of the opening, an n+-type source layer that is in ohmic contact with the source electrode, a p-type GaN barrier layer, and a p+-type GaN-based supplementary layer located between the p-type GaN barrier layer and the n+-type source layer. The p+-type GaN-based supplementary layer and the n+-type source layer form a tunnel junction to fix the electric potential of the p-type GaN barrier layer at a source potential.

摘要翻译： 提供了通过确定地固定p型GaN势垒层的电位可以稳定地提高夹断特性和击穿电压特性的垂直半导体器件。 半导体器件包括具有开口的GaN基层叠层，包含覆盖开口壁面的沟道的再生长层，与源电极欧姆接触的n +型源极，p 位于p型GaN势垒层和n +型源极层之间的p +型GaN基辅助层。 p +型GaN基辅助层和n +型源极层形成隧道结，以将p型GaN阻挡层的电位固定在源极电位。

公开(公告)号：US08941174B2

公开(公告)日：2015-01-27

申请号：US13885131

申请日：2011-10-17

申请人： Masaya Okada ,  Makoto Kiyama ,  Yu Saitoh ,  Seiji Yaegashi ,  Mitsunori Yokoyama ,  Kazutaka Inoue

发明人： Masaya Okada ,  Makoto Kiyama ,  Yu Saitoh ,  Seiji Yaegashi ,  Mitsunori Yokoyama ,  Kazutaka Inoue

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/778 ,  H01L29/20 ,  H01L29/417 ,  H01L29/423

CPC分类号： H01L29/7813 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/66462 ,  H01L29/66734 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/78

摘要： It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. A GaN-based stacked layer 15 includes n−-type GaN drift layer 4/p-type GaN barrier layer 6/n+-type GaN contact layer 7. An opening 28 extends from a top layer and reaches the n−-type GaN drift layer 4. The semiconductor device includes a regrown layer 27 located so as to cover a wall surface and a bottom portion of the opening, the regrown layer 27 including an electron drift layer 22 and an electron source layer 26, a source electrode S located around the opening, a gate electrode G located on the regrown layer in the opening, and a bottom insulating layer 37 located in the bottom portion of the opening.

摘要翻译： 本发明的目的是提高具有开口的垂直半导体器件的击穿电压特性，并且在开口中包括由二维电子气形成的沟道。 GaN基叠层15包括n型GaN漂移层4 / p型GaN势垒层6 / n +型GaN接触层7.开口28从顶层延伸并到达n型GaN漂移 该半导体器件包括重新生长层27，其被覆盖以覆盖开口的壁表面和底部，再生长层27包括电子漂移层22和电子源层26，源电极S位于 开口，位于开口中的再生长层上的栅极电极G和位于开口底部的底部绝缘层37。