公开(公告)号：US08993197B2

公开(公告)日：2015-03-31

申请号：US13511175

申请日：2010-12-24

申请人： Takashi Iseki ,  Kazuyuki Nakanishi ,  Yasuhiro Ozawa ,  Yuka Yamada ,  Hajime Hasegawa ,  Masafumi Koizumi ,  Katsutoshi Fujisawa ,  Naoki Ueda ,  Hirohiko Hisano

发明人： Takashi Iseki ,  Kazuyuki Nakanishi ,  Yasuhiro Ozawa ,  Yuka Yamada ,  Hajime Hasegawa ,  Masafumi Koizumi ,  Katsutoshi Fujisawa ,  Naoki Ueda ,  Hirohiko Hisano

IPC分类号： H01M8/02 ,  C23C16/26 ,  C01B31/02 ,  B82Y30/00

CPC分类号： C01B31/02 ,  B82Y30/00 ,  C01B32/05 ,  H01M8/021 ,  H01M8/0228 ,  H01M8/0234 ,  Y02P70/56

摘要： A bipolar plate for a fuel cell comprises a substrate formed of stainless steel; an oriented amorphous carbon film formed at least on a surface of the substrate facing an electrode, and containing C as a main component, 3 to 20 at. % of N, and more than 0 at. % and not more than 20 at. % of H, and when the total amount of the C is taken as 100 at. %, the amount of C having an sp2 hybrid orbital (Csp2) being not less than 70 at. % and less than 100 at. %, and (002) planes of graphite being oriented along a thickness direction; a mixed layer generated in an interface between the substrate and the oriented amorphous carbon film and containing at least one kind of constituent atoms of each of the substrate and the oriented amorphous carbon film; and a plurality of projections protruding from the mixed layer into the oriented amorphous carbon film and having a mean length of 10 to 150 nm.

摘要翻译： 用于燃料电池的双极板包括由不锈钢形成的基板; 至少在面向电极的基板的表面上形成并含有C为主要成分的定向非晶碳膜，3至20at。 N的百分比，超过0。 ％，不超过20。 H的百分比，当C的总量取为100时。 ％，具有sp2混合轨道（Csp2）的C的量不小于70at。 ％和小于100。 ％和（002）面的石墨沿厚度方向取向; 在所述基板和所述取向非晶碳膜之间的界面中产生并且含有所述基板和所述取向非晶碳膜中的至少一种构成原子的混合层; 以及从混合层突出到取向非晶碳膜中并具有10〜150nm的平均长度的多个突起。

公开(公告)号：US08431967B2

公开(公告)日：2013-04-30

申请号：US13020566

申请日：2011-02-03

申请人： Kazuyuki Nakanishi ,  Masaki Tamaru

发明人： Kazuyuki Nakanishi ,  Masaki Tamaru

IPC分类号： H01L27/118

CPC分类号： H01L27/0207

摘要： A layout of a semiconductor device is capable of reliably reducing a variation in gate length due to the optical proximity effect, and enables flexible layout design to be implemented. Gate patterns (G1, G2, G3) of a cell (C1) are arranged at the same pitch, and terminal ends (e1, e2, e3) of the gate patterns are located at the same position in the Y direction, and have the same width in the X direction. A gate pattern (G4) of a cell (C2) has protruding portions (4b) protruding toward the cell (C1) in the Y direction, and the protruding portions (4b) form opposing terminal ends (eo1, eo2, eo3). The opposing terminal ends (eo1, eo2, eo3) are arranged at the same pitch as the gate patterns (G1, G2, G3), are located at the same position in the Y direction, and have the same width in the X direction.

摘要翻译： 半导体器件的布局能够可靠地降低由于光学邻近效应引起的栅极长度的变化，并且能够实现灵活的布局设计。 单元（C1）的栅极图案（G1，G2，G3）以相同的间距排列，并且栅极图案的末端（e1，e2，e3）位于与Y方向相同的位置， 相同宽度的X方向。 电池（C2）的栅极图案（G4）具有在Y方向朝向电池单元（C1）突出的突出部分（4b），并且突出部分（4b）形成相对的末端（eo1，eo2，eo3）。 相对的末端（eo1，eo2，eo3）以与栅极图案（G1，G2，G3）相同的间距配置在与Y方向相同的位置，并且在X方向上具有相同的宽度。

公开(公告)号：US20080224176A1

公开(公告)日：2008-09-18

申请号：US12048837

申请日：2008-03-14

申请人： Kazuyuki Nakanishi ,  Hidetoshi Nishimura ,  Tomoaki Ikegami

发明人： Kazuyuki Nakanishi ,  Hidetoshi Nishimura ,  Tomoaki Ikegami

IPC分类号： H01L27/10

CPC分类号： H01L27/0203 ,  H01L27/11807

摘要： A semiconductor integrated circuit is provided which entails no increase in the correction time of OPC and in which non-uniformity in the gate lengths due to the optical proximity effects is surely suppressed. A plurality of standard cells (C1, C2, C3, . . . ), each including gates G extended in the vertical direction, are aligned in the transverse direction to form a standard cell row. A plurality of the standard cell rows are located side by side in the vertical direction to form a standard cell group. Each of the standard cell rows has a terminal standard cell Ce at least one end of the standard cell row. The terminal standard cell Ce includes two or more supplementary gates, each of which is any of a dummy gate and a gate of an inactive transistor.

摘要翻译： 提供了一种半导体集成电路，其不需要增加OPC的校正时间，并且可靠地抑制由于光学邻近效应引起的栅极长度的不均匀性。 在垂直方向上延伸的包括栅极G的多个标准单元（C 1，C 2，C 3，...）在横向方向上排列以形成标准单元行。 多个标准单元行在垂直方向上并排设置以形成标准单元组。 每个标准单元行在标准单元行的至少一端具有端子标准单元Ce。 终端标准单元Ce包括两个或更多个辅助栅极，每个补充栅极是无源晶体管的伪栅极和栅极中的任一个。

公开(公告)号：US20060181309A1

公开(公告)日：2006-08-17

申请号：US11354936

申请日：2006-02-16

申请人： Kazuyuki Nakanishi

发明人： Kazuyuki Nakanishi

IPC分类号： H03K19/177

CPC分类号： H01L27/0207 ,  H01L27/11807

摘要： A rectangular opening is formed in a power supply line which is shared between cell rows. A connection to a substrate potential supply line is ensured in the rectangular opening.

摘要翻译： 在单元列之间共享的电源线中形成矩形开口。 在矩形开口中确保与衬底电位供给线的连接。

公开(公告)号：US5443662A

公开(公告)日：1995-08-22

申请号：US84322

申请日：1993-06-30

申请人： Tohru Arai ,  Kazuyuki Nakanishi ,  Hiromasa Takeda ,  Hideo Tachikawa

发明人： Tohru Arai ,  Kazuyuki Nakanishi ,  Hiromasa Takeda ,  Hideo Tachikawa

IPC分类号： C23C8/06 ,  C23C8/24 ,  C23C8/30 ,  C23C16/442 ,  C23C16/44 ,  B05D1/22

CPC分类号： C23C16/442

摘要： A nitride or carbonitride layer is formed on the surface of a metal material as follows: A treating agent composed of a refractory powder of alumina or the like and a powder of a metal for forming a nitride or a carbide or an alloy thereof is disposed in a fluidized bed furnace; the treating agent is fluidized to form a fluidized bed by introducing an inert gas; the fluidized bed furnace is heated to a temperature of not higher than 700.degree. C.; an activator of a halogenated ammonium salt is intermittently supplied into the fluidized bed at a rate of 0.001 to 5 wt %/hour based on the total amount of the treating agent; and the metal material to be treated is disposed in the fluidized bed during or after any of the above steps. For example, a nitride layer composed of only a metal for forming a nitride which contains almost no Fe--N is formed on the surface of iron steel even at a temperature as low as not higher than 700.degree. C. The layer is very hard and efficient in wear resistance, and the toughness of the base metal is hardly lowered.

摘要翻译： 在金属材料的表面上如下形成氮化物或碳氮化物层：由氧化铝等的耐火材料粉末和用于形成氮化物的金属粉末或其合金构成的处理剂设置在 流化床炉; 通过引入惰性气体使处理剂流化形成流化床; 将流化床炉加热至不高于700℃的温度; 基于处理剂的总量，以0.001至5重量％/小时的速率将卤化铵盐的活化剂间歇地供给到流化床中; 并且在任何上述步骤期间或之后将要处理的金属材料设置在流化床中。 例如，即使在700℃以下的温度下，也在铁钢的表面上形成仅由形成几乎不含Fe-N的氮化物的金属构成的氮化物层。该层非常硬， 耐磨损性高，贱金属的韧性几乎不降低。

公开(公告)号：US08652587B2

公开(公告)日：2014-02-18

申请号：US13046208

申请日：2011-03-11

申请人： Kazuyuki Nakanishi ,  Takashi Iseki ,  Yasuhiro Ozawa ,  Yuka Yamada ,  Seiji Mizuno ,  Katsumi Sato ,  Masafumi Koizumi ,  Yoshiyuki Funaki ,  Kyouji Kondo ,  Takayuki Kikuchi

发明人： Kazuyuki Nakanishi ,  Takashi Iseki ,  Yasuhiro Ozawa ,  Yuka Yamada ,  Seiji Mizuno ,  Katsumi Sato ,  Masafumi Koizumi ,  Yoshiyuki Funaki ,  Kyouji Kondo ,  Takayuki Kikuchi

IPC分类号： H05H1/24

CPC分类号： C23C16/26 ,  C23C16/503 ,  C23C16/545

摘要： This invention adopts plasma-enhanced chemical vapor deposition using the apparatus including a chamber, a pair of rotary electrode reels including a feed-out reel and a take-up reel, a plasma source, a material gas supplier, and an exhaust unit, and includes applying a negative voltage applied to the rotary electrode reels from the plasma source while a conductive substrate is fed-out from the feed-out reel and is wound on the take-up reel so that the entire surface of the substrate portion between reels contacts the material gas, whereby plasma sheath is formed along the surface of the substrate portion between reels, and the material gas is activated in the plasma sheath and thus contacts the surface of the substrate, thus forming the film on the surface of the substrate.

摘要翻译： 本发明采用等离子体增强化学气相沉积法，该装置包括一个室，一对旋转电极卷轴，包括一个送出卷轴和一个卷取卷轴，等离子体源，原料气体供应器和排气单元，以及 包括在从所述送出卷轴送出导电性基板并卷绕在所述卷取卷轴上时，施加从所述等离子体源施加到所述旋转电极卷轴上的负电压，使得所述基板部分在卷盘接触之间的整个表面 材料气体，由此在卷轴之间沿着基板部分的表面形成等离子体护套，并且材料气体在等离子体护套中被激活，并且因此接触基板的表面，从而在基板的表面上形成膜。

公开(公告)号：US08399928B2

公开(公告)日：2013-03-19

申请号：US13179214

申请日：2011-07-08

申请人： Tomoaki Ikegami ,  Kazuyuki Nakanishi ,  Masaki Tamaru

发明人： Tomoaki Ikegami ,  Kazuyuki Nakanishi ,  Masaki Tamaru

IPC分类号： H01L21/00

CPC分类号： H01L27/0207 ,  H01L27/0248 ,  H01L27/0255 ,  H01L27/0629 ,  H01L27/11898

摘要： A standard cell has gate patterns extending in Y direction and arranged at an equal pitch in X direction. End portions of the gate patterns are located at the same position in Y direction, and have an equal width in X direction. A diode cell is located next to the standard cell in Y direction, and includes a plurality of opposite end portions formed of gate patterns that are opposed to the end portions, in addition to a diffusion layer which functions as a diode.

公开(公告)号：US07833626B2

公开(公告)日：2010-11-16

申请号：US11720154

申请日：2005-11-24

申请人： Takashi Iseki ,  Hideo Tachikawa ,  Hiroyuki Mori ,  Kazuyuki Nakanishi ,  Munehisa Matsui ,  Shintaro Igarashi ,  Fumio Shimizu ,  Yoshinari Tsuchiya ,  Tadashi Oshima

发明人： Takashi Iseki ,  Hideo Tachikawa ,  Hiroyuki Mori ,  Kazuyuki Nakanishi ,  Munehisa Matsui ,  Shintaro Igarashi ,  Fumio Shimizu ,  Yoshinari Tsuchiya ,  Tadashi Oshima

IPC分类号： B32B9/00 ,  H05H1/24

CPC分类号： C23C16/26 ,  Y10T428/30

摘要： An amorphous carbon film includes carbon as a major component, and silicon in an amount of from 0.1 atomic % or more to 10 atomic % or less when the entire amorphous carbon film is taken as 100 atomic %. The carbon is composed of carbon having an sp2 hybrid orbital in an amount of from 60 atomic % or more to 90 atomic % or less when the entire carbon amount is taken as 100 atomic %. Also disclosed is a process for producing the amorphous carbon film.

摘要翻译： 当非晶碳膜的整体为100原子％时，无定形碳膜以碳为主成分，硅为0.1原子％以上且10原子％以下。 当全部碳量为100原子％时，碳由具有60原子％以上至90原子％以下的量的sp2混合轨道的碳构成。 还公开了一种制备无定形碳膜的方法。

公开(公告)号：US07721642B2

公开(公告)日：2010-05-25

申请号：US12021673

申请日：2008-01-29

申请人： Takahiro Sugioka ,  Takayuki Kato ,  Shuichi Yasuda ,  Atsushi Saito ,  Masahiro Suzuki ,  Hitotoshi Murase ,  Takashi Iseki ,  Hideo Tachikawa ,  Kazuyuki Nakanishi ,  Takao Kobayashi ,  Ken-ichi Suzuki

发明人： Takahiro Sugioka ,  Takayuki Kato ,  Shuichi Yasuda ,  Atsushi Saito ,  Masahiro Suzuki ,  Hitotoshi Murase ,  Takashi Iseki ,  Hideo Tachikawa ,  Kazuyuki Nakanishi ,  Takao Kobayashi ,  Ken-ichi Suzuki

IPC分类号： F01B31/10

CPC分类号： F04B27/1054 ,  F05C2203/0817 ,  F05C2203/0882 ,  F05C2225/00 ,  F05C2251/14 ,  F05C2253/12 ,  F16C33/201

摘要： To provide a sliding member that exhibits excellent durability and is free of lead. A swash plate for a compressor as the sliding member of the invention contains a base material having on the surface thereof a sliding layer constituting at least a sliding surface, on which shoes slide. The sliding layer contains a first layer that contains an amorphous hard carbon (diamond-like carbon) film containing Si (DLC-Si film) and is formed on the base material, and a second layer that is formed on the first layer and contains polyamideimide (PAI) containing a solid lubricant such as MoS2.

摘要翻译： 提供具有优异耐久性且不含铅的滑动构件。 作为本发明的滑动构件的压缩机的斜盘包含基材，其表面上具有至少构成滑动面的滑动层，滑块滑动。 滑动层含有含有Si（DLC-Si膜）的无定形硬碳（类金刚石碳）薄膜并形成在基材上的第一层，第二层形成在第一层上并含有聚酰胺酰亚胺 （PAI），其包含固体润滑剂如MoS2。

公开(公告)号：US20100001404A1

公开(公告)日：2010-01-07

申请号：US12542263

申请日：2009-08-17

申请人： Tomoaki Ikegami ,  Hidetoshi Nishimura ,  Kazuyuki Nakanishi

发明人： Tomoaki Ikegami ,  Hidetoshi Nishimura ,  Kazuyuki Nakanishi

IPC分类号： H01L23/52

CPC分类号： H01L27/04 ,  H01L27/0207 ,  H01L27/11807

摘要： A layout structure of a semiconductor integrated circuit is provided with which narrowing and breaking of metal interconnects near a cell boundary can be prevented without increasing the data amount and processing time for OPC. A cell A and a cell B are adjacent to each other along a cell boundary. The interconnect regions of metal interconnects from which to the cell boundary no other interconnect region exists are placed to be substantially axisymmetric with respect to the cell boundary, while sides of diffusion regions facing the cell boundary are asymmetric with respect to the cell boundary.

摘要翻译： 提供半导体集成电路的布局结构，可以防止在单元边界附近的金属互连的变窄和断开，而不增加OPC的数据量和处理时间。 单元格A和单元格B沿着单元边界彼此相邻。 相对于单元边界，金属互连的连接区域与单元边界不存在其他互连区域被放置为基本上是轴对称的，而面向单元边界的扩散区域的边相对于单元边界是不对称的。