公开(公告)号：US5846695A

公开(公告)日：1998-12-08

申请号：US829697

申请日：1997-03-26

申请人： Keiichi Iwata ,  Tetsuya Karita ,  Tetsuo Aoyama

发明人： Keiichi Iwata ,  Tetsuya Karita ,  Tetsuo Aoyama

IPC分类号： G03F7/32 ,  G03F7/42 ,  H01L21/02 ,  H01L21/027 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/311 ,  H01L21/3213 ,  G03C5/00

CPC分类号： H01L21/02071 ,  G03F7/425 ,  H01L21/31133

摘要： A removing agent composition for a photoresist comprising 0.01 to 20% by weight of a quaternary ammonium hydroxide, 1 to 80% by weight of a nucleophilic amine having an oxidation-reduction potential, 0.5 to 20% by weight of a sugar and/or a sugar alcohol, and water in the remaining amount; and a process for producing a semiconductor integrated circuit comprising removing a photoresist applied onto an inorganic substrate by using the above removing agent composition. A layer of a photoresist applied onto an inorganic substrate, a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer, or residues of a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer and subsequent ashing of the layer can easily be removed at a low temperature in a short time. The wiring material of the circuit is not corroded at all, and ultra-fine working can be performed.

摘要翻译： 用于光致抗蚀剂的去除剂组合物，其包含0.01至20重量％的季铵氢氧化物，1至80重量％的具有氧化还原电位的亲核胺，0.5至20重量％的糖和/或 糖醇和水中剩余量; 以及用于制造半导体集成电路的方法，包括通过使用上述除去剂组合物除去施加到无机基板上的光致抗蚀剂。 施加到无机基板上的光致抗蚀剂层，在被该层掩蔽的无机基板的干蚀刻之后残留的光致抗蚀剂层，或在被掩蔽的无机基板的干蚀刻之后留下的光致抗蚀剂层的残留物 通过层和随后的灰化可以在短时间内在低温下容易地去除。 电路的接线材料根本不腐蚀，可以进行超细的加工。

公开(公告)号：US06440326B1

公开(公告)日：2002-08-27

申请号：US09524499

申请日：2000-03-13

申请人： Taketo Maruyama ,  Hisaki Abe ,  Tetsuya Karita ,  Tetsuo Aoyama

发明人： Taketo Maruyama ,  Hisaki Abe ,  Tetsuya Karita ,  Tetsuo Aoyama

IPC分类号： C09K1300

CPC分类号： C23G1/061 ,  G03F7/425 ,  H01L21/31133

摘要： A resist removing composition comprising a quaternary ammonium hydroxide, a water-soluble amine, an alkylpyrrolidone and a sugar or sugar alcohol. The photoresist removing composition can easily remove (i) a photoresist layer applied onto an inorganic substrate, (ii) a remaining photoresist layer after dry etching or (iii) a photoresist residue after ashing, at a low temperature in a short time, and also enables hyperfine processing of a wiring pattern material to manufacture a high precision circuit pattern without corroding the material.

摘要翻译： 一种抗蚀剂去除组合物，其包含季铵氢氧化物，水溶性胺，烷基吡咯烷酮和糖或糖醇。 光致抗蚀剂去除组合物可以容易地除去（i）施加到无机基材上的光致抗蚀剂层，（ii）在干蚀刻之后残留的光致抗蚀剂层，或（iii）灰化后的光致抗蚀剂残留物，在短时间内在低温下，以及 使得布线图案材料的超精细加工能够制造高精度的电路图案而不会腐蚀材料。

公开(公告)号：US06500270B2

公开(公告)日：2002-12-31

申请号：US09176523

申请日：1998-10-21

申请人： Masahiro Nohara ,  Yukihiko Takeuchi ,  Taimi Oketani ,  Taketo Maruyama ,  Tetsuya Karita ,  Hisaki Abe ,  Tetsuo Aoyama

发明人： Masahiro Nohara ,  Yukihiko Takeuchi ,  Taimi Oketani ,  Taketo Maruyama ,  Tetsuya Karita ,  Hisaki Abe ,  Tetsuo Aoyama

IPC分类号： C23G100

CPC分类号： C11D7/5013 ,  C11D7/3218 ,  C11D7/3263 ,  C11D7/3272 ,  C11D11/0047

摘要： A resist film removing composition used in the manufacture of a thin film circuit element having an organic insulation film which comprises 50 to 70% by weight of an alkanolamine having 3 or more carbon atoms, 20 to 30% by weight of a water-miscible solvent and 10 to 20% by weight of water. The resist film removing composition can easily remove a resist film remaining after etching, without swelling the organic insulation film.

摘要翻译： 一种用于制造具有有机绝缘膜的薄膜电路元件的抗蚀膜去除组合物，该有机绝缘膜包含50至70重量％的具有3个或更多个碳原子的链烷醇胺，20至30重量％的水混溶性溶剂 和10〜20重量％的水。 抗蚀剂膜去除组合物可以容易地除去蚀刻后残留的抗蚀剂膜，而不会使有机绝缘膜膨胀。

公开(公告)号：US06265309B1

公开(公告)日：2001-07-24

申请号：US09309076

申请日：1999-05-10

申请人： Hideto Gotoh ,  Tsuyoshi Matsui ,  Takayuki Niuya ,  Tetsuo Aoyama ,  Taketo Maruyama ,  Tetsuya Karita ,  Kojiro Abe ,  Fukusaburou Ishihara ,  Ryuji Sotoaka

发明人： Hideto Gotoh ,  Tsuyoshi Matsui ,  Takayuki Niuya ,  Tetsuo Aoyama ,  Taketo Maruyama ,  Tetsuya Karita ,  Kojiro Abe ,  Fukusaburou Ishihara ,  Ryuji Sotoaka

IPC分类号： H01L2102

CPC分类号： H01L21/02071 ,  C11D3/044 ,  C11D3/2006 ,  C11D3/2082 ,  C11D3/33 ,  C11D11/0047 ,  H01L21/02063 ,  H01L21/31138 ,  Y10S438/906

摘要： A cleaning agent for use in producing semiconductor devices. The cleaning agent is an aqueous solution containing (A) a fluorine-containing compound, (B) a salt of boric acid, (C) a water-soluble organic solvent, and optionally, (D) a specific quaternary ammonium salt or (D′) a specific ammonium salt of an organic carboxylic acid or a specific amine salt of an organic carboxylic acid. The polymeric deposit inside and around the via holes and on the side wall of the conductive line pattern formed during the dry etching process can be effectively removed by using the cleaning agent without affecting the dimensions of the via holes and the conductive line pattern.

摘要翻译： 一种用于制造半导体器件的清洁剂。 清洗剂是含有（A）含氟化合物，（B）硼酸盐，（C）水溶性有机溶剂和（D）特定季铵盐或（D） '）有机羧酸的特定铵盐或有机羧酸的特定胺盐。 通过使用清洁剂可以有效地除去在干法蚀刻工艺期间形成的导电孔图案和导电线图案的侧壁上和周围的聚合物沉积物，而不影响通孔和导电线图案的尺寸。