High permeability thin-film magnetic head and method of manufacture
    1.
    发明授权
    High permeability thin-film magnetic head and method of manufacture 失效
    高磁导率薄膜磁头及其制造方法

    公开(公告)号:US5382301A

    公开(公告)日:1995-01-17

    申请号:US961395

    申请日:1992-10-15

    IPC分类号: G11B5/31 H01F1/153 H01F41/22

    摘要: A thin-film magnetic head is disclosed that includes a lower magnetic core and an upper magnet core formed on the surface of a substrate and connected together at a first end thereof, a magnetic gap is formed between the lower and upper magnetic cores at a second end thereof, and a coil-form electric conductive layer is located between the lower magnetic core and the upper magnet core. The lower and upper magnetic cores have a saturated magnetic flux density from 10,000 G to 18,000 G, while the magnetic permeability along the magnetic path of the magnetic head is 3,000 or higher at a frequency of 10 MHz. The unique characteristics of the magnetic head are obtained by heating an arrangement comprising the lower and upper magnetic cores, the magnetic gap layer, and the electric conductive layer to a temperature above 325.degree. C., and applying an external magnetic field greater than 0.01 kOe to the lower and upper magnetic cores to relax their magnetic anisotropy as the lower and upper magnetic cores are cooled during the manufacturing process.

    摘要翻译: 公开了一种薄膜磁头,其包括形成在基板的表面上的下磁芯和上磁芯,并在其第一端连接在一起,在下磁芯和上磁芯之间形成磁隙,第二 并且线圈形导电层位于下磁芯和上磁心之间。 下磁芯和上磁芯具有10,000G至18,000G的饱和磁通密度,而磁头的磁路的磁导率在10MHz的频率下为3,000或更高。 通过将包括下磁芯和上磁芯,磁隙层和导电层的装置加热到高于325℃的温度,并施加大于0.01kOe的外部磁场,获得磁头的独特特性 到下磁芯和上磁芯,以在制造过程中随着下磁芯和上磁芯的冷却而松弛其磁各向异性。

    Thin film magnetic head
    2.
    发明授权
    Thin film magnetic head 失效
    薄膜磁头

    公开(公告)号:US5576098A

    公开(公告)日:1996-11-19

    申请号:US085946

    申请日:1993-07-06

    IPC分类号: G11B5/31 G11B5/66 B32B5/16

    摘要: A thin film magnetic head includes an upper magnetic core film and a lower magnetic core film laminated one on another through a magnetic gap layer. The upper and lower magnetic core films are multilayer thin films, respectively, each of which is composed of a plurality of magnetic thin film layers and a plurality of non-magnetic thin film layers, alternately laminated one on another. The magnetic core films and have single domain structures, respectively, and the use of such magnetic core films realizes a thin film magnetic head having high permeability at high frequencies and improved high frequency characteristics and attains high recording density.

    摘要翻译: 薄膜磁头包括通过磁隙层彼此层叠的上磁芯膜和下磁芯膜。 上下磁芯膜是分别由层叠的多个磁性薄膜层和多个非磁性薄膜层构成的多层薄膜。 磁芯膜分别具有单畴结构,并且使用这种磁芯膜实现了在高频下具有高磁导率和改善的高频特性并获得高记录密度的薄膜磁头。

    Stoichiometric B1-type tantalum nitride and a sintered body thereof and
method of synthesizing the B1-type tantalum nitride
    4.
    发明授权
    Stoichiometric B1-type tantalum nitride and a sintered body thereof and method of synthesizing the B1-type tantalum nitride 失效
    化学计量B1型氮化钽及其烧结体及合成B1型氮化钽的方法

    公开(公告)号:US5306320A

    公开(公告)日:1994-04-26

    申请号:US986907

    申请日:1992-12-08

    IPC分类号: C01B21/06 C04B35/58

    摘要: The object of the present invention is to provide a stoichiometric B1-type tantalum nitride and a sintered body thereof.A B1-type tantalum nitride and a sintered body thereof, wherein a stoichiometric B1-type tantalum nitride is produced typically according to the method of impact compression, having the properties (a) that the X ray diffraction substantially shows a pattern ascribed to the stoichiometric B1-type tantalum nitride alone but not others, (b) that the measured value of the lattice spacing D (h, k, l) has a deviation of 0.00013 nm or less from the corresponding value calculated based on the B1 structure, (c) that the lattice constant is 0.4335.about.0.4338 nm, (d) that the electron diffraction image substantially shows the spots particular to the stoichiometric B1-type tantalum nitride alone but not others and (e) the value of Z in TaN.sub.z is within a range of 0.96-1.01.

    摘要翻译: 本发明的目的是提供一种化学计量的B1型氮化钽及其烧结体。 B1型氮化钽及其烧结体,其中通常按照冲击压缩的方法制备化学计量的B1型氮化钽,其特征在于(a)X射线衍射基本上表现为归因于化学计量 B1型氮化钽单独但不是其他,(b)晶格间距D(h,k,l)的测量值与基于B1结构计算的相应值的偏差为0.00013nm或更小,(c ),晶格常数为0.4335〜0.4338nm,(d)电子衍射图像基本上显示出单一化学计量的B1型氮化钽特有的斑点,而不是其他情况,(e)TaNz中的Z值在一定范围内 为0.96-1.01。

    Stoichiometric B1-type tantalum nitride and a sintered body thereof and
method of synthesizing the B1-type tantalum nitride
    5.
    发明授权
    Stoichiometric B1-type tantalum nitride and a sintered body thereof and method of synthesizing the B1-type tantalum nitride 失效
    STOICHIOMETRIC B1型氮化钛及其烧结体及合成B1型氮化钛的方法

    公开(公告)号:US5201923A

    公开(公告)日:1993-04-13

    申请号:US735923

    申请日:1991-07-25

    IPC分类号: C01B21/06 C04B35/58

    摘要: The object of the present invention is to provide a stoichiometric B1-type tantalum nitride and a sintered body thereof.A B1-type tantalum nitride and a sintered body thereof, wherein a stoichiometric B1-type tantalum nitride is produced typically according to the method of impact compression, having the properties (a) that the X-ray diffraction substantially shows a pattern ascribed to the stoichiometric B1-type tantalum nitride alone but not others, (b) that the measured value of the lattice spacing D (h, k, l) has a deviation of 0.00013 nm or less from the corresponding value calculated based on the B1 structure, (c) that the lattice constant is 0.4335.about.0.4338 nm, (d) that the electron diffraction image substantially shows the spots particular to the stoichiometric B1-type tantalum nitride alone but not others and (e) the value of Z in TaN.sub.z is within a range of 0.96-1.01.

    摘要翻译: 本发明的目的是提供一种化学计量的B1型氮化钽及其烧结体。 B1型氮化钽及其烧结体,其中通常按照冲击压缩的方法制备化学计量的B1型氮化钽,其特征在于(a)X射线衍射基本上表现为归因于 化学计量的B1型氮化钽,而不是其他,(b)晶格间距D(h,k,l)的测量值与基于B1结构计算的相应值的偏差为0.00013nm以下( c)晶格常数为0.4335差±0.4338nm,(d)电子衍射图像基本上显示出单独的化学计量的B1型氮化钽特有的斑点,而不是其他的,(e)TaNz中的Z的值在 范围为0.96-1.01。