公开(公告)号：US08860099B2

公开(公告)日：2014-10-14

申请号：US12881643

申请日：2010-09-14

申请人： Keiji Tatani ,  Fumihiko Koga ,  Takashi Nagano

发明人： Keiji Tatani ,  Fumihiko Koga ,  Takashi Nagano

IPC分类号： H01L31/062 ,  H01L31/113 ,  H01L27/146

CPC分类号： H01L27/14612 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

摘要： A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.

摘要翻译： 固体摄像器件包括第一导电型半导体阱区，多个像素，每个像素形成在半导体阱区上，由光电转换部和像素晶体管组成，元件隔离区设置在 像素和像素中的元件隔离区域以及不含绝缘膜的元件隔离区域，并且设置在期望的像素晶体管之间。

公开(公告)号：US20110269259A1

公开(公告)日：2011-11-03

申请号：US13178624

申请日：2011-07-08

申请人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

发明人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

IPC分类号： H01L31/02

CPC分类号： H01L27/1463 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14689 ,  H01L27/14831

摘要： A solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

摘要翻译： 一种固体摄像器件，包括像素部分，外围电路部分，在外围电路部分中的半导体衬底上形成有STI结构的第一隔离区域和在半导体衬底上形成有STI结构的第二隔离区域 在像素部分。 埋在半导体衬底中的第二隔离区的部分比第一隔离区的半导体衬底的部分浅，第二隔离区的上表面的高度等于第一隔离区的高度。 还公开了制造固态成像装置的方法和设置有固态成像装置的电子装置。

公开(公告)号：US20110073923A1

公开(公告)日：2011-03-31

申请号：US12881643

申请日：2010-09-14

申请人： Keiji Tatani ,  Fumihiko Koga ,  Takashi Nagano

发明人： Keiji Tatani ,  Fumihiko Koga ,  Takashi Nagano

IPC分类号： H01L27/146 ,  H01L31/18

CPC分类号： H01L27/14612 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14689

摘要： A solid-state imaging device includes a first-conductivity-type semiconductor well region, a plurality of pixels each of which is formed on the semiconductor well region and is composed of a photoelectric conversion portion and a pixel transistor, an element isolation region provided between the pixels and in the pixels, and an element isolation region being free from an insulation film and being provided between desired pixel transistors.

摘要翻译： 固体摄像器件包括第一导电型半导体阱区，多个像素，每个像素形成在半导体阱区上，由光电转换部和像素晶体管组成，元件隔离区设置在 像素和像素中的元件隔离区域以及不含绝缘膜的元件隔离区域，并且设置在期望的像素晶体管之间。

公开(公告)号：US08728852B2

公开(公告)日：2014-05-20

申请号：US13178624

申请日：2011-07-08

申请人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

发明人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

IPC分类号： H01L31/02

CPC分类号： H01L27/1463 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14689 ,  H01L27/14831

摘要： A solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

摘要翻译： 一种固体摄像器件，包括像素部分，外围电路部分，在外围电路部分中的半导体衬底上形成有STI结构的第一隔离区域和在半导体衬底上形成有STI结构的第二隔离区域 在像素部分。 埋在半导体衬底中的第二隔离区的部分比第一隔离区的半导体衬底的部分浅，第二隔离区的上表面的高度等于第一隔离区的高度。 还公开了制造固态成像装置的方法和设置有固态成像装置的电子装置。

公开(公告)号：US20090256226A1

公开(公告)日：2009-10-15

申请号：US12420570

申请日：2009-04-08

申请人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

发明人： Keiji Tatani ,  Takuji Matsumoto ,  Yasushi Tateshita ,  Fumihiko Koga ,  Takashi Nagano ,  Takahiro Toyoshima ,  Tetsuji Yamaguchi ,  Keiichi Nakazawa ,  Naoyuki Miyashita ,  Yoshihiko Nagahama

IPC分类号： H01L31/0232 ,  H01L31/00 ,  H01L21/762

CPC分类号： H01L27/1463 ,  H01L27/14609 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14689 ,  H01L27/14831

摘要： Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

摘要翻译： 公开了一种固态成像装置，其包括像素部分，外围电路部分，在外围电路部分中的半导体衬底上形成有STI结构的第一隔离区域和形成有STI结构的第二隔离区域 半导体衬底。 掩埋在半导体衬底中的第二隔离区的部分比第一隔离区的半导体衬底的部分浅，第二隔离区的上表面的高度等于第一隔离区的高度。 还公开了制造固态成像装置的方法和设置有固态成像装置的电子装置。

公开(公告)号：US08115154B2

公开(公告)日：2012-02-14

申请号：US12509990

申请日：2009-07-27

申请人： Takuji Matsumoto ,  Tetsuji Yamaguchi ,  Keiji Tatani ,  Yutaka Nishimura ,  Kazuichiro Itonaga ,  Hiroyuki Mori ,  Norihiro Kubo ,  Fumihiko Koga ,  Shinichiro Izawa ,  Susumu Ooki

发明人： Takuji Matsumoto ,  Tetsuji Yamaguchi ,  Keiji Tatani ,  Yutaka Nishimura ,  Kazuichiro Itonaga ,  Hiroyuki Mori ,  Norihiro Kubo ,  Fumihiko Koga ,  Shinichiro Izawa ,  Susumu Ooki

IPC分类号： H01L27/00 ,  H01L31/112 ,  H01L21/28

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/14643

摘要： A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.

摘要翻译： 固态成像装置包括：半导体衬底，包括具有光电转换部分和外围电路部分的像素部分; 第一侧壁，其由侧壁膜构成，并且设置在像素部中的MOS晶体管的栅电极的每个侧壁上; 由所述侧壁膜构成并设置在所述外围电路部的MOS晶体管的栅电极的各侧壁上的第二侧壁; 由所述侧壁膜构成的第一硅化物阻挡膜，设置在所述光电转换部分和所述像素部分中的所述MOS晶体管的一部分; 以及第二硅化物阻挡膜，设置在像素部分中的MOS晶体管上，以与第一硅化物阻挡膜的一部分重叠，其中像素部分中的MOS晶体管被第一和第二硅化物阻挡膜覆盖。

公开(公告)号：US08431880B2

公开(公告)日：2013-04-30

申请号：US13349149

申请日：2012-01-12

申请人： Takuji Matsumoto ,  Tetsuji Yamaguchi ,  Keiji Tatani ,  Yutaka Nishimura ,  Kazuichiro Itonaga ,  Hiroyuki Mori ,  Norihiro Kubo ,  Fumihiko Koga ,  Shinichiro Izawa ,  Susumu Ooki

发明人： Takuji Matsumoto ,  Tetsuji Yamaguchi ,  Keiji Tatani ,  Yutaka Nishimura ,  Kazuichiro Itonaga ,  Hiroyuki Mori ,  Norihiro Kubo ,  Fumihiko Koga ,  Shinichiro Izawa ,  Susumu Ooki

IPC分类号： H01L27/00

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/14643

摘要： A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.

摘要翻译： 固态成像装置包括：半导体衬底，包括具有光电转换部分和外围电路部分的像素部分; 第一侧壁，其由侧壁膜构成，并且设置在像素部中的MOS晶体管的栅电极的每个侧壁上; 由所述侧壁膜构成并设置在所述外围电路部的MOS晶体管的栅电极的各侧壁上的第二侧壁; 由所述侧壁膜构成的第一硅化物阻挡膜，设置在所述光电转换部分和所述像素部分中的所述MOS晶体管的一部分; 以及第二硅化物阻挡膜，设置在像素部分中的MOS晶体管上，以与第一硅化物阻挡膜的一部分重叠，其中像素部分中的MOS晶体管被第一和第二硅化物阻挡膜覆盖。

公开(公告)号：US20120104479A1

公开(公告)日：2012-05-03

申请号：US13349149

申请日：2012-01-12

申请人： Takuji Matsumoto ,  Tetsuji Yamaguchi ,  Keiji Tatani ,  Yutaka Nishimura ,  Kazuichiro Itonaga ,  Hiroyuki Mori ,  Norihiro Kubo ,  Fumihiko Koga ,  Shinichiro Izawa ,  Susumu Ooki

发明人： Takuji Matsumoto ,  Tetsuji Yamaguchi ,  Keiji Tatani ,  Yutaka Nishimura ,  Kazuichiro Itonaga ,  Hiroyuki Mori ,  Norihiro Kubo ,  Fumihiko Koga ,  Shinichiro Izawa ,  Susumu Ooki

IPC分类号： H01L27/146

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/14643

摘要： A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.

摘要翻译： 固态成像装置包括：半导体衬底，包括具有光电转换部分和外围电路部分的像素部分; 第一侧壁，其由侧壁膜构成，并且设置在像素部中的MOS晶体管的栅电极的每个侧壁上; 由所述侧壁膜构成并设置在所述外围电路部的MOS晶体管的栅电极的各侧壁上的第二侧壁; 由所述侧壁膜构成的第一硅化物阻挡膜，设置在所述光电转换部分和所述像素部分中的所述MOS晶体管的一部分; 以及第二硅化物阻挡膜，设置在像素部分中的MOS晶体管上，以与第一硅化物阻挡膜的一部分重叠，其中像素部分中的MOS晶体管被第一和第二硅化物阻挡膜覆盖。

公开(公告)号：US20100025569A1

公开(公告)日：2010-02-04

申请号：US12509990

申请日：2009-07-27

申请人： Takuji Matsumoto ,  Tetsuji Yamaguchi ,  Keiji Tatani ,  Yutaka Nishimura ,  Kazuichiro Itonaga ,  Hiroyuki Mori ,  Norihiro Kubo ,  Fumihiko Koga ,  Shinichiro Izawa ,  Susumu Ooki

发明人： Takuji Matsumoto ,  Tetsuji Yamaguchi ,  Keiji Tatani ,  Yutaka Nishimura ,  Kazuichiro Itonaga ,  Hiroyuki Mori ,  Norihiro Kubo ,  Fumihiko Koga ,  Shinichiro Izawa ,  Susumu Ooki

IPC分类号： H01L27/00 ,  H01L31/112 ,  H01L21/28

CPC分类号： H01L27/14689 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/14643

摘要： A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.

摘要翻译： 固态成像装置包括：半导体衬底，包括具有光电转换部分和外围电路部分的像素部分; 第一侧壁，其由侧壁膜构成，并且设置在像素部中的MOS晶体管的栅电极的每个侧壁上; 由所述侧壁膜构成并设置在所述外围电路部的MOS晶体管的栅电极的各侧壁上的第二侧壁; 由所述侧壁膜构成的第一硅化物阻挡膜，设置在所述光电转换部分和所述像素部分中的所述MOS晶体管的一部分; 以及第二硅化物阻挡膜，设置在像素部分中的MOS晶体管上，以与第一硅化物阻挡膜的一部分重叠，其中像素部分中的MOS晶体管被第一和第二硅化物阻挡膜覆盖。

公开(公告)号：US08604408B2

公开(公告)日：2013-12-10

申请号：US12944162

申请日：2010-11-11

申请人： Takeshi Yanagita ,  Fumihiko Koga ,  Toshifumi Wakano ,  Takashi Nagano

发明人： Takeshi Yanagita ,  Fumihiko Koga ,  Toshifumi Wakano ,  Takashi Nagano

IPC分类号： H01L31/00 ,  H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14689

摘要： A solid-state imaging device includes: a pixel having a photodiode and a pixel transistor; a first isolation region using a semiconductor region containing impurities formed between neighboring photodiodes; and a second isolation region using an semiconductor region containing impurities formed between the photodiode and the pixel transistor, wherein an impurity concentration of the first isolation region is different from an impurity concentration of the second isolation region.

摘要翻译： 固态成像装置包括：具有光电二极管和像素晶体管的像素; 使用包含形成在相邻光电二极管之间的杂质的半导体区域的第一隔离区域; 以及使用包含在所述光电二极管和所述像素晶体管之间形成的杂质的半导体区域的第二隔离区域，其中所述第一隔离区域的杂质浓度与所述第二隔离区域的杂质浓度不同。