公开(公告)号：US20120142172A1

公开(公告)日：2012-06-07

申请号：US13313422

申请日：2011-12-07

申请人： Keith FOX ,  Mandyam SRIRAM ,  Bart VAN SCHRAVENDIJK ,  Jennifer O'LOUGHLIN ,  Joe WOMACK

发明人： Keith FOX ,  Mandyam SRIRAM ,  Bart VAN SCHRAVENDIJK ,  Jennifer O'LOUGHLIN ,  Joe WOMACK

IPC分类号： H01L21/20 ,  C23C16/52 ,  C23C16/50

CPC分类号： C23C16/24 ,  C23C16/345 ,  C23C16/402 ,  C23C16/4401 ,  C23C16/45523 ,  C23C16/509 ,  C23C16/54 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02532 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/32055

摘要： Smooth silicon and silicon germanium films are deposited by plasma enhanced chemical vapor deposition (PECVD). The films are characterized by roughness (Ra) of less than about 4 Å. In some embodiments, smooth silicon films are undoped and doped polycrystalline silicon films. The dopants can include boron, phosphorus, and arsenic. In some embodiments the smooth polycrystalline silicon films are also highly conductive. For example, boron-doped polycrystalline silicon films having resistivity of less than about 0.015 Ohm cm and Ra of less than about 4 Å can be deposited by PECVD. In some embodiments smooth silicon films are incorporated into stacks of alternating layers of doped and undoped polysilicon, or into stacks of alternating layers of silicon oxide and doped polysilicon employed in memory devices. Smooth films can be deposited using a process gas having a low concentration of silicon-containing precursor and/or a process gas comprising a silicon-containing precursor and H2.

摘要翻译： 通过等离子体增强化学气相沉积（PECVD）沉积光滑的硅和锗锗膜。 膜的特征在于粗糙度（Ra）小于约4。 在一些实施例中，平滑的硅膜是未掺杂的和掺杂的多晶硅膜。 掺杂剂可以包括硼，磷和砷。 在一些实施例中，平滑多晶硅膜也是高导电性的。 例如，可以通过PECVD沉积电阻率小于约0.015欧姆·厘米且小于约的Ra的硼掺杂多晶硅膜。 在一些实施例中，平滑的硅膜被并入到掺杂和未掺杂多晶硅的交替层的堆叠中，或并入存储器件中使用的氧化硅和掺杂多晶硅的交替层的堆叠中。 可以使用具有低浓度含硅前体的工艺气体和/或包含含硅前体和H 2的工艺气体来沉积光滑的膜。