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公开(公告)号：US20070218696A1
公开(公告)日：2007-09-20
申请号：US11509736
申请日：2006-08-25
IPC分类号： H01L21/465
CPC分类号： H01L21/32137
摘要： The invention provides a method for processing vertical gate patterns while reducing the Si substrate recess dimension caused by overetching. The invention provides a dry etching method for processing a gate pattern by performing a main etching process (b) and then an overetching process on a gate pattern layer 12 of a semiconductor substrate 10, wherein the overetching process (c) is performed using a composite gas having added to an etching gas containing HBr gas a gas represented by a general formula of CxHy or at least one gas selected from CO and CO2 gases.
摘要翻译： 本发明提供了一种在减少由过蚀刻引起的Si衬底凹陷尺寸的同时处理垂直栅极图案的方法。 本发明提供一种通过在半导体衬底10的栅极图案层12上执行主蚀刻工艺（b）然后进行过蚀刻处理来进行栅极图案的干式蚀刻方法，其中过蚀刻工艺（c）使用复合材料 已经添加到含有HBr气体的蚀刻气体的气体是由通式C x H y表示的气体或选自CO和CO 2气体的至少一种气体。
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公开(公告)号：US08143175B2
公开(公告)日：2012-03-27
申请号：US12435787
申请日：2009-05-05
IPC分类号： H01L21/31
CPC分类号： H01L21/32139 , H01L21/0338 , H01L21/28123 , H01L21/31116 , H01L21/32137
摘要： The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein the wiring process is performed without causing disconnection or deflection of the wiring. The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein during a step for etching a material 12 to be etched using a mask pattern composed of a photoresist 15 and inorganic films 14 and 13 made of SiN, SiON, SiO and the like formed on the material 12 to be etched, a mixed gas formed of a halogen-based gas such as chlorine-containing gas or bromine-containing gas and at least one fluorine-containing gas selected from a group of fluorine-containing gases composed of CF4, CHF3, SF6 and NF3 is used to reduce the mask pattern and the processing dimension of the material to be etched substantially equally during processing of the material 12 to be etched.
摘要翻译： 本发明提供了一种用于使用等离子体蚀刻装置在半导体衬底上进行布线处理的干蚀刻方法，其中进行布线处理而不引起布线的断开或偏转。 本发明提供一种使用等离子体蚀刻装置对半导体衬底进行布线处理的干式蚀刻方法，其中在使用由光致抗蚀剂15和无机膜14和13构成的掩模图案来蚀刻要蚀刻的材料12的步骤期间， 在被蚀刻材料12上形成的SiN，SiON，SiO等，由含氯气体或含溴气体的卤素系气体形成的混合气体和至少一种选自 使用由CF4，CHF3，SF6和NF3组成的含氟气体组，在待蚀刻材料12的加工期间，基本上相同地减少掩模图案和待蚀刻材料的加工尺寸。
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公开(公告)号：US20070207618A1
公开(公告)日：2007-09-06
申请号：US11505292
申请日：2006-08-17
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/32139 , H01L21/0338 , H01L21/28123 , H01L21/31116 , H01L21/32137
摘要： The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein the wiring process is performed without causing disconnection or deflection of the wiring. The invention provides a dry etching method for performing a wiring process on a semiconductor substrate using a plasma etching apparatus, wherein during a step for etching a material 12 to be etched using a mask pattern composed of a photoresist 15 and inorganic films 14 and 13 made of SiN, SiON, SiO and the like formed on the material 12 to be etched, a mixed gas formed of a halogen-based gas such as chlorine-containing gas or bromine-containing gas and at least one fluorine-containing gas selected from a group of fluorine-containing gases composed of CF4, CHF3, SF6 and NF3 is used to reduce the mask pattern and the processing dimension of the material to be etched substantially equally during processing of the material 12 to be etched.
摘要翻译： 本发明提供了一种用于使用等离子体蚀刻装置在半导体衬底上进行布线处理的干蚀刻方法，其中进行布线处理而不引起布线的断开或偏转。 本发明提供一种使用等离子体蚀刻装置对半导体衬底进行布线处理的干式蚀刻方法，其中在使用由光致抗蚀剂15和无机膜14和13构成的掩模图案来蚀刻要蚀刻的材料12的步骤期间， 在被蚀刻材料12上形成的SiN，SiON，SiO等，由含氯气体或含溴气体的卤素系气体形成的混合气体和至少一种选自 使用由CF 4，CHF 3，SF 6和NF 3 3构成的含氟气体组， 在要蚀刻的材料12的处理期间，基本上相同地减小掩模图案和待蚀刻材料的加工尺寸。
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公开(公告)号：US20080216865A1
公开(公告)日：2008-09-11
申请号：US11834046
申请日：2007-08-06
IPC分类号： B08B6/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
摘要翻译： 本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理 房间。 本发明提供了一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及用于供应气体的供应系统，所述气体与供应的转移气体相同 到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。
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公开(公告)号：US08277563B2
公开(公告)日：2012-10-02
申请号：US13019131
申请日：2011-02-01
IPC分类号： B08B7/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method which includes (i) feeding a transferring gas which decreases a pressure difference between a processing chamber and a transfer chamber in order to prevent particles from adhering a processing sample, to be processed, passed to the processing chamber, before transferring the sample into the processing chamber; (ii) transferring the sample into the processing chamber while continuing to feed the transferring gas to the processing chamber; (iii) generating a plasma from the transferring gas in the processing chamber while continuing to feed the transferring gas to the processing chamber after the step of transferring the sample; and (iv) changing a gas supplied to the processing chamber from the transferring gas used in the step of generating the plasma to a processing gas for subjecting the processing sample, different from a cleaning sample, to plasma processing.
摘要翻译： 本发明提供一种等离子体处理方法，其包括（i）供给转移气体，该转移气体降低处理室和转移室之间的压力差，以防止颗粒附着在待处理样品上，被处理通过到处理室， 在将样品转移到处理室之前; （ii）将所述样品转移到所述处理室中，同时继续将所述转移气体供给到所述处理室; （iii）在所述处理室中从所述转移气体产生等离子体，同时在转移所述样品的步骤之后继续将所述转移气体供给到所述处理室; 以及（iv）将从产生等离子体的步骤中使用的转移气体中提供给处理室的气体改变为用于对不同于清洁样品的处理样品进行等离子体处理的处理气体。
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公开(公告)号：US20110120495A1
公开(公告)日：2011-05-26
申请号：US13019131
申请日：2011-02-01
IPC分类号： B08B7/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
摘要翻译： 本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理 房间。 本发明提供了一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及用于供应气体的供应系统，所述气体与供应的转移气体相同 到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。
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公开(公告)号：US07909933B2
公开(公告)日：2011-03-22
申请号：US12437941
申请日：2009-05-08
IPC分类号： B08B7/00
CPC分类号： H01J37/32743 , H01J37/3244 , H01J37/32788 , H01L21/67069 , H01L21/67213
摘要： The invention provides a plasma processing method capable of reducing particle caused by flinging up of particles by airflow due to the pressure fluctuation in the processing chamber during the time the sample is carried into the processing chamber, subjected to plasma processing and carried out of the processing chamber. The invention provides a plasma processing method using a plasma processing apparatus comprising multiple plasma processing chambers for processing samples, a transfer chamber connected to the processing chambers for transferring samples, and a supply system for supplying gas which is the same gas as a transferring gas supplied to the transfer chamber to both the processing chambers and transfer chamber or to only the processing chambers, wherein the process comprises (b) a step of transferring the sample into the processing chamber with the transferring gas supplied to the processing chamber; (c) thereafter, generating plasma from the transferring gas supplied to the processing chamber while maintaining the supply of transferring gas to the processing chamber; (d) a step of switching the gas supplied to the processing chamber from transferring gas to processing gas while maintaining plasma by supplying processing gas continuously to the processing chamber; and (e) a step of subjecting the sample to plasma processing.
摘要翻译： 本发明提供一种等离子体处理方法，其能够减少由于在将样品运送到处理室中的处理室中的压力波动造成的颗粒的飞散，进行等离子体处理并进行处理 房间。 本发明提供了一种使用等离子体处理装置的等离子体处理方法，该等离子体处理装置包括用于处理样品的多个等离子体处理室，连接到用于转移样品的处理室的传送室，以及供应与供给的传送气体相同的气体的供应系统 到所述转移室到所述处理室和转移室或仅处理室，其中所述方法包括（b）将样品转移到所述处理室中的步骤，所述转移气体供应到所述处理室; （c）此后，从供给到处理室的转移气体产生等离子体，同时保持向处理室供给转移气体; （d）通过将处理气体连续供给到处理室，同时保持等离子体，将供给到处理室的气体从传送气体切换到处理气体的步骤; 和（e）使样品经受等离子体处理的步骤。
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公开(公告)号：US20060016781A1
公开(公告)日：2006-01-26
申请号：US10928266
申请日：2004-08-30
IPC分类号： H01L21/302 , C23F1/00
CPC分类号： H01L21/3065 , H01L21/3086 , H01L21/31116 , H01L21/31138
摘要： The object of the invention is to provide a dry etching method for processing the edge portion of a hard mask to have a round profile. The present method for manufacturing a semiconductor device comprises (b) forming a silicon nitride film 12 mask using a patterned photoresist 13, (c) cutting back the photoresist 13 via dry etching, and (d) etching the exposed edge portion of the silicon nitride film mask 12, to thereby enable trench processing using a silicon nitride film mask 12 having a rounded edge portion.
摘要翻译： 本发明的目的是提供一种用于处理硬掩模的边缘部分以具有圆形轮廓的干蚀刻方法。 本发明的半导体器件的制造方法包括：（b）使用图案化的光致抗蚀剂13形成氮化硅膜12掩模，（c）通过干蚀刻切割光致抗蚀剂13，以及（d）蚀刻氮化硅的暴露边缘部分 膜掩模12，从而能够使用具有圆形边缘部分的氮化硅膜掩模12进行沟槽加工。
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