Digital wet etching of semiconductor materials
    9.
    发明授权
    Digital wet etching of semiconductor materials 失效
    数字湿法蚀刻半导体材料

    公开(公告)号:US6004881A

    公开(公告)日:1999-12-21

    申请号:US990881

    申请日:1997-12-15

    IPC分类号: H01L21/306 H01L21/302

    CPC分类号: H01L21/30612

    摘要: A room temperature wet chemical digital etching technique for, gallium arsenide or other semiconductor material. Hydrogen peroxide and an acid are used in a two step etching cycle to remove the gallium arsenide in approximately 15 .ANG. limited increments. In the first step of the cycle, gallium arsenide is oxidized by, for example, 30% hydrogen peroxide to form an oxide layer that is diffusion limited to a thickness of, for example, 14-17 .ANG. for time periods from 15 seconds to 120 seconds. The second step of the cycle removes this oxide layer with an acid that does not attack unoxidized gallium arsenide. These steps are repeated in succession using new reactant materials and cleaning after each reactant (to prevent reactant contamination) until the desired etch depth is obtained. Experimental results are presented demonstrating the etch rate and process invariability with respect to hydrogen peroxide and acid exposure times. A method for using a Hall effect measurement to determine the achieved change in surface layer thickness of doped semiconductor material is also included.

    摘要翻译: 用于砷化镓或其他半导体材料的室温湿化学数字蚀刻技术。 在两步蚀刻循环中使用过氧化氢和酸,以大约15个ANGSTROM限制的增量去除砷化镓。 在该循环的第一步中,砷化镓被例如30%的过氧化氢氧化,形成扩散限制在例如14-17安培的厚度的氧化物层,持续15秒至120秒 秒。 该循环的第二步是用不会对未氧化砷化镓进行攻击的酸去除该氧化物层。 这些步骤使用新的反应物材料并在每个反应物之后进行清洗(以防止反应物污染),直到获得所需的蚀刻深度为止重复。 实验结果表明了相对于过氧化氢和酸暴露时间的蚀刻速率和工艺不变性。 还包括使用霍尔效应测量来确定所获得的掺杂半导体材料的表面层厚度的变化的方法。