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公开(公告)号:US20070262387A1
公开(公告)日:2007-11-15
申请号:US11798152
申请日:2007-05-10
申请人: Kenichi Nonaka , Takeshi Kato , Kenji Oogushi , Yoshihiko Higashidani , Yoshimitsu Saito , Kenji Okamoto
发明人: Kenichi Nonaka , Takeshi Kato , Kenji Oogushi , Yoshihiko Higashidani , Yoshimitsu Saito , Kenji Okamoto
IPC分类号: H01L23/62
CPC分类号: H01L23/057 , H01L23/3735 , H01L24/45 , H01L24/48 , H01L25/072 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/16195 , H01L2924/19107 , H01L2924/3011 , H05K1/0271 , H05K1/0306 , H05K3/0061 , H05K3/38 , H05K2201/0355 , H05K2201/068 , H01L2924/00014 , H01L2924/00 , H01L2924/00015
摘要: A power semiconductor module having an integral circuit board with a metal substrate electrode, an insulation substrate and a heat sink joined is disclosed. A SiC semiconductor power device is joined to a top of the metal substrate electrode of the circuit board. A difference in average coefficients of thermal expansion between constituent materials of the circuit board in a temperature range from room to joining time temperatures is 2.0 ppm/° C. or less, and a difference in expansion, produced by a difference between a lowest operating temperature and a joining temperature, of the circuit-board constituent materials is 2,000 ppm or less.
摘要翻译: 公开了具有金属基板电极,绝缘基板和散热片接合的集成电路板的功率半导体模块。 SiC半导体功率器件接合到电路板的金属衬底电极的顶部。 在从室温到接合时间温度的温度范围内,电路板的构成材料的平均热膨胀系数的差异为2.0ppm /℃以下,膨胀差由最低工作温度 并且电路板构成材料的接合温度为2000ppm以下。
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公开(公告)号:US07671467B2
公开(公告)日:2010-03-02
申请号:US11798152
申请日:2007-05-10
申请人: Kenichi Nonaka , Takeshi Kato , Kenji Oogushi , Yoshihiko Higashidani , Yoshimitsu Saito , Kenji Okamoto
发明人: Kenichi Nonaka , Takeshi Kato , Kenji Oogushi , Yoshihiko Higashidani , Yoshimitsu Saito , Kenji Okamoto
CPC分类号: H01L23/057 , H01L23/3735 , H01L24/45 , H01L24/48 , H01L25/072 , H01L2224/32225 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48472 , H01L2224/73265 , H01L2924/01079 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/16195 , H01L2924/19107 , H01L2924/3011 , H05K1/0271 , H05K1/0306 , H05K3/0061 , H05K3/38 , H05K2201/0355 , H05K2201/068 , H01L2924/00014 , H01L2924/00 , H01L2924/00015
摘要: A power semiconductor module having an integral circuit board with a metal substrate electrode, an insulation substrate and a heat sink joined is disclosed. A SiC semiconductor power device is joined to a top of the metal substrate electrode of the circuit board. A difference in average coefficients of thermal expansion between constituent materials of the circuit board in a temperature range from room to joining time temperatures is 2.0 ppm/° C. or less, and a difference in expansion, produced by a difference between a lowest operating temperature and a joining temperature, of the circuit-board constituent materials is 2,000 ppm or less.
摘要翻译: 公开了具有金属基板电极,绝缘基板和散热片接合的集成电路板的功率半导体模块。 SiC半导体功率器件接合到电路板的金属衬底电极的顶部。 在从室温到接合时间温度的温度范围内,电路板的构成材料的平均热膨胀系数的差异为2.0ppm /℃以下,膨胀差由最低工作温度 并且电路板构成材料的接合温度为2000ppm以下。
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公开(公告)号:US08169780B2
公开(公告)日:2012-05-01
申请号:US12815745
申请日:2010-06-15
IPC分类号: H05K7/20
CPC分类号: H05K7/20927
摘要: In a power conversion device including: a converter which steps up or down a voltage of a direct current power supply; and an inverter which converts the direct current voltage obtained by the converter into an alternating voltage to drive an electric motor, a plurality of magnetic parts are arranged above a switching element assembly unit with a water-cooled type second heat sink interposed between the switching element assembly unit and the plurality of magnetic parts, the switching element assembly unit configured by mounting all the switching element modules on upper and lower surfaces of a water-cooled type first heat sink. Accordingly, it is possible to provide a power conversion device capable of housing many switching element modules in a compact space and cooling them effectively, while preventing the influence of a noise due to the magnetic parts from acting on the switching element modules as much as possible.
摘要翻译: 一种电力转换装置,包括:升压或降压直流电源的电压的转换器; 以及将由转换器获得的直流电压转换为交流电压以驱动电动机的逆变器,多个磁性部件布置在开关元件组件单元的上方,水冷式第二散热器插入在开关元件 组装单元和多个磁性部件,所述开关元件组件单元通过将所有开关元件模块安装在水冷式第一散热器的上表面和下表面上而构成。 因此,可以提供一种能够在紧凑的空间内容纳许多开关元件模块并且有效地冷却它们的电力转换装置,同时防止由于磁性部件引起的噪声的影响尽可能地作用于开关元件模块 。
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4.
公开(公告)号:US08064198B2
公开(公告)日:2011-11-22
申请号:US12820668
申请日:2010-06-22
IPC分类号: H05K7/20
CPC分类号: H05K7/20927 , Y10T307/50
摘要: A cooling device for a semiconductor element module and a magnetic part, includes: a water-cooled type heat sink having a cooling water passage; a semiconductor element module including a plurality of chips arranged side by side in a circulation direction in the cooling water passage, the semiconductor element module being mounted on the heat sink; and a magnetic part including a core and a winding portion mounted on the core, the magnetic part being mounted on the heat sink or another heat sink. In the cooling device, a plurality of cooling fins is disposed to extend along the circulation direction in the cooling water passage in a manner that the plurality of cooling fins are separated into groups for the respective chips arranged side by side in the circulation direction, and that the groups of the cooling fins are offset from each other in a direction perpendicular to the circulation direction. Accordingly, it is possible to have improved cooling efficiency of a heat sink with cooling fins.
摘要翻译: 一种用于半导体元件模块和磁性部件的冷却装置,包括:具有冷却水通道的水冷式散热器; 半导体元件模块,其包括在所述冷却水通道中沿循环方向并排布置的多个芯片,所述半导体元件模块安装在所述散热器上; 以及包括芯和安装在芯上的绕组部分的磁性部分,磁性部分安装在散热片或另一散热片上。 在冷却装置中,多个冷却翅片配置成沿冷却水通道的循环方向延伸,使得多个散热片沿着循环方向并排布置的各个芯片分成一组,并且 冷却翅片组在与循环方向垂直的方向上彼此偏移。 因此,可以提高具有散热片的散热器的冷却效率。
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