公开(公告)号：US20110198617A1

公开(公告)日：2011-08-18

申请号：US13125187

申请日：2009-10-06

申请人： Kensuke Iwanaga ,  Seiichi Yokoyama ,  Hideki Hashimoto ,  Kenichi Nonaka ,  Masashi Sato ,  Norio Tsuyuguchi

发明人： Kensuke Iwanaga ,  Seiichi Yokoyama ,  Hideki Hashimoto ,  Kenichi Nonaka ,  Masashi Sato ,  Norio Tsuyuguchi

IPC分类号： H01L29/20 ,  H01L21/283 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L21/0485 ,  H01L21/28512 ,  H01L23/485 ,  H01L29/1608 ,  H01L29/6606 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor device comprising a p-type SiC semiconductor and an ohmic electrode having an Ni/Al laminated structure provided on the p-type SiC semiconductor. The semiconductor device simultaneously has improved contact resistance and surface roughness in the ohmic electrode. The semiconductor device comprises an ohmic electrode (18) comprising a nickel (Ni) layer (21), a titanium (Ti) layer (22), and an aluminum (Al) layer (23) stacked in that order on a p-type silicon carbide semiconductor region (13). The ohmic electrode (18) comprises 14 to 47 atomic % of a nickel element, 5 to 12 atomic % of titanium element, and 35 to 74 atomic % of an aluminum element, provided that the atomic ratio of the nickel element to the titanium element is 1 to 11.

摘要翻译： 公开了一种包括p型SiC半导体和在p型SiC半导体上设置有Ni / Al层叠结构的欧姆电极的半导体器件。 半导体器件同时具有改善的欧姆电极中的接触电阻和表面粗糙度。 该半导体器件包括欧姆电极（18），其包括镍（Ni）层（21），钛（Ti）层（22）和铝（Al）层（23），其依次堆叠在p型 碳化硅半导体区域（13）。 欧姆电极（18）包含14至47原子％的镍元素，5至12原子％的钛元素和35至74原子％的铝元素，条件是镍元素与钛元素的原子比 是1到11。

公开(公告)号：US07671467B2

公开(公告)日：2010-03-02

申请号：US11798152

申请日：2007-05-10

申请人： Kenichi Nonaka ,  Takeshi Kato ,  Kenji Oogushi ,  Yoshihiko Higashidani ,  Yoshimitsu Saito ,  Kenji Okamoto

发明人： Kenichi Nonaka ,  Takeshi Kato ,  Kenji Oogushi ,  Yoshihiko Higashidani ,  Yoshimitsu Saito ,  Kenji Okamoto

IPC分类号： H01L23/12 ,  H01L21/50 ,  H01L21/44

CPC分类号： H01L23/057 ,  H01L23/3735 ,  H01L24/45 ,  H01L24/48 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/16195 ,  H01L2924/19107 ,  H01L2924/3011 ,  H05K1/0271 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/38 ,  H05K2201/0355 ,  H05K2201/068 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

摘要： A power semiconductor module having an integral circuit board with a metal substrate electrode, an insulation substrate and a heat sink joined is disclosed. A SiC semiconductor power device is joined to a top of the metal substrate electrode of the circuit board. A difference in average coefficients of thermal expansion between constituent materials of the circuit board in a temperature range from room to joining time temperatures is 2.0 ppm/° C. or less, and a difference in expansion, produced by a difference between a lowest operating temperature and a joining temperature, of the circuit-board constituent materials is 2,000 ppm or less.

摘要翻译： 公开了具有金属基板电极，绝缘基板和散热片接合的集成电路板的功率半导体模块。 SiC半导体功率器件接合到电路板的金属衬底电极的顶部。 在从室温到接合时间温度的温度范围内，电路板的构成材料的平均热膨胀系数的差异为2.0ppm /℃以下，膨胀差由最低工作温度 并且电路板构成材料的接合温度为2000ppm以下。

公开(公告)号：US5578933A

公开(公告)日：1996-11-26

申请号：US383783

申请日：1995-02-06

申请人： Kenichi Nonaka

发明人： Kenichi Nonaka

IPC分类号： G01S7/02 ,  G01S11/02 ,  G01S11/06 ,  G01S11/00

CPC分类号： G01S11/06

摘要： A distance measuring system for measuring a distance between two objects has a transmitter assembly mounted on one of the two objects, for transmitting a plurality of electromagnetic waves having respective wavelengths different from each other at respective levels toward the other of the two objects, a receiver assembly mounted on the other object, for receiving the electromagnetic waves transmitted from the transmitting means, and a distance detector for detecting a ratio of levels at which at least one set of electromagnetic waves of the electromagnetic waves is received by the receiving means, as corresponding to a distance between the two objects, and determining the distance between the two objects from the ratio.

摘要翻译： 用于测量两个物体之间的距离的距离测量系统具有安装在两个物体中的一个物体上的发射器组件，用于将各个波长彼此不同的多个电磁波分别朝向两个物体中的另一个发射;接收器 组装安装在另一个物体上，用于接收从发送装置发送的电磁波;以及距离检测器，用于检测由接收装置接收至少一组电磁波的电磁波的电平的比例，作为对应 到两个物体之间的距离，并且从该比率确定两个物体之间的距离。

公开(公告)号：US20080017695A1

公开(公告)日：2008-01-24

申请号：US11826756

申请日：2007-07-18

申请人： Kenji Okamoto ,  Takeshi Kato ,  Kenichi Nonaka

发明人： Kenji Okamoto ,  Takeshi Kato ,  Kenichi Nonaka

IPC分类号： B23K31/02

CPC分类号： B23K20/2333

摘要： Provided is a method of joining members having different thermal expansion coefficients, capable of joining them at a temperature lower than the melting point of Ag to obtain a joining layer having excellent durability to a thermal cycle. First Ag particles 3 having an average particle diameter of 50 nm or less and an Ag foil 4 or metal foil 4 having a smaller modulus of longitudinal elasticity than that of Ag are placed between two types of members 1 and 2 at least one of which has a lower thermal expansion coefficient than that of Ag, heated to join the members 1 and 2. A wax material 3, which is a powder mixture containing first Ag particles having an average particle diameter of 50 nm or less and second Ag particles or particles of a metal (having a modulus of longitudinal elasticity than that of Ag) having an average particle diameter of 20 μm or more and being contained in a volume fraction of 10 to 40% relative to a total volume of the powder mixture, is placed between the two types of members 1 and 2, heated to join the members 1 and 2. The metal foil 4 and the particles of a metal have an Ag coating layer on a surface thereof. The first member 1 is formed of one type of material selected from the group consisting of Si, SiC, Al2O3, AlN and Si3N4 and the second member is formed of Al or Cu.

摘要翻译： 提供了一种接合具有不同热膨胀系数的构件的方法，其能够在低于Ag的熔点的温度下接合它们，以获得对热循环具有优异的耐久性的接合层。 平均粒径为50nm以下的第一Ag粒子3和纵向弹性模量比Ag小的Ag箔4或金属箔4放置在两种类型的构件1和2之间，其中至少一个具有 热膨胀系数比Ag的热膨胀系数低，被加热以接合构件1和2.作为粉末混合物的蜡材料3，其是含有平均粒径为50nm以下的第一Ag粒子和第二Ag粒子或第二Ag粒子 平均粒径为20μm以上的金属（纵向弹性模量比Ag的弹性模量）相对于粉末混合物的总体积的体积分数为10〜40％ 两种类型的构件1和2被加热以接合构件1和2.金属箔4和金属颗粒在其表面上具有Ag涂层。 第一构件1由选自Si，SiC，Al 2 O 3 3，AlN和Si 3 N 3的一种材料形成。 > N 4，并且第二构件由Al或Cu形成。

公开(公告)号：US6067110A

公开(公告)日：2000-05-23

申请号：US675163

申请日：1996-07-03

申请人： Kenichi Nonaka ,  Yoshimitsu Saitou ,  Masaaki Abe ,  Seiichi Yokoyama

发明人： Kenichi Nonaka ,  Yoshimitsu Saitou ,  Masaaki Abe ,  Seiichi Yokoyama

IPC分类号： B60Q1/48 ,  B60Q1/52 ,  G01S11/12 ,  G01S17/89 ,  G01S17/93 ,  H04N7/18 ,  G08G1/00 ,  H04N5/30

CPC分类号： H04N7/18 ,  B60Q1/52 ,  B60Q9/005 ,  B60Q9/006 ,  G01S17/89 ,  G01S17/936

摘要： An object recognizing device for recognizing an object by transmitting laser light from a laser light source and receiving reflected light from the object by a light sensor, wherein the laser light source and the light sensor are disposed at a relative vertical distance of not less than 20 cm therebetween with a divergence angle .theta..sub.1 of the laser radiation emitted from the laser light source being set at a value of not more than 5 mrad and being smaller than an angle .alpha. formed between an optical axis of the laser light and an optical axis of the reflected light entering into the light sensor, and which is, therefore, capable of effectively recognizing any object even in an atmosphere containing aerosol, e.g., fog or haze.

摘要翻译： 一种物体识别装置，用于通过从激光源发射激光并通过光传感器接收来自物体的反射光来识别物体，其中激光源和光传感器设置在不小于20°的相对垂直距离 cm，其中从激光光源发射的激光辐射的发散角θ1被设定为不大于5mrad的值，并且小于在激光的光轴和光轴的光轴之间形成的角度α 入射到光传感器中的反射光，因此即使在含有雾化或雾霾的气溶胶的气氛中也能够有效地识别任何物体。

公开(公告)号：US5391897A

公开(公告)日：1995-02-21

申请号：US122103

申请日：1993-09-15

申请人： Kenichi Nonaka

发明人： Kenichi Nonaka

IPC分类号： H01L29/80 ,  H01L29/739

CPC分类号： H01L29/7392

摘要： A static induction semiconductor device has a low-resistance drain region, a high-resistance layer disposed on the drain region, a low-resistance source region spaced from the high-resistance layer, a low-resistance gate region disposed in the high-resistance layer, and a hetero layer disposed in an interface between the high-resistance layer and the source region and an interface between the gate region and a surface protective layer on the gate and source regions. The hetero layer, which may be made of AlGaAs, has a band gap larger than a semiconductor crystal such as GaAs of the drain, source, and gate regions. The static induction semiconductor device has a low resistance turned on and can operate in a bipolar mode.

摘要翻译： 静电感应半导体器件具有低电阻漏极区域，设置在漏极区域上的高电阻层，与高电阻层隔开的低电阻源极区域，设置在高电阻器中的低电阻栅极区域 层，以及设置在高电阻层和源极区之间的界面中的异质层以及栅极区域和栅极和源极区域上的表面保护层之间的界面。 可以由AlGaAs制成的杂层具有比诸如漏极，源极和栅极区域的诸如GaAs的半导体晶体大的带隙。 静电感应半导体器件具有低电阻导通并且可以以双极模式工作。

公开(公告)号：US20110095398A1

公开(公告)日：2011-04-28

申请号：US12908542

申请日：2010-10-20

申请人： Kenichi NONAKA ,  Hideki HASHIMOTO ,  Seiichi YOKOYAMA ,  Akihiko HORIUCHI ,  Yuki NEGORO ,  Norio TSUYUGUCHI ,  Takeshi ASADA ,  Masaaki SHIMIZU

发明人： Kenichi NONAKA ,  Hideki HASHIMOTO ,  Seiichi YOKOYAMA ,  Akihiko HORIUCHI ,  Yuki NEGORO ,  Norio TSUYUGUCHI ,  Takeshi ASADA ,  Masaaki SHIMIZU

IPC分类号： H01L29/417 ,  H01L21/8222

CPC分类号： H01L29/7322 ,  H01L29/0804 ,  H01L29/1608 ,  H01L29/41708 ,  H01L29/66068 ,  H01L29/66272

摘要： A bipolar semiconductor device includes a collector region that is an n-type low-resistance layer formed in one surface of a semiconductor crystal substrate, an n-type first high-resistance region on the collector region, a p-type base region on the first high-resistance region, an n-type low-resistance emitter region that is formed in another surface of the semiconductor crystal substrate, an n-type second high-resistance region between the emitter region and the base region so as to contact the emitter region, an n-type recombination suppressing region around the second high-resistance region so as to adjoin the second high-resistance region, and a p-type low-resistance base contact region which is provided so as to adjoin the recombination suppressing region, and which contacts the base region. Each of doping concentrations of the second high-resistance region and the recombination suppressing region is equal to or lower than 1×1017 cm−3.

摘要翻译： 双极半导体器件包括：集电极区域，其是形成在半导体晶体衬底的一个表面中的n型低电阻层，集电极区域上的n型第一高电阻区域， 第一高电阻区域，形成在半导体晶体衬底的另一表面中的n型低电阻发射极区域，在发射极区域和基极区域之间的n型第二高电阻区域，以便接触发射极 区域，以与第二高电阻区域相邻的第二高电阻区域周围的n型复合抑制区域和与复合抑制区域相邻设置的p型低电阻碱性接触区域， 并且其接触基部区域。 第二高电阻区域和复合抑制区域的掺杂浓度各自为1×1017cm-3以下。

公开(公告)号：US20080052901A1

公开(公告)日：2008-03-06

申请号：US11889403

申请日：2007-08-13

申请人： Koichi Nishikawa ,  Masaaki Shimizu ,  Kenichi Nonaka ,  Seiichi Yokoyama ,  Hideki Hashimoto

发明人： Koichi Nishikawa ,  Masaaki Shimizu ,  Kenichi Nonaka ,  Seiichi Yokoyama ,  Hideki Hashimoto

IPC分类号： H05K3/00 ,  H05B3/06

CPC分类号： H01L21/67115 ,  H01L21/67103 ,  H01L21/68721 ,  H01L29/1608 ,  H01L29/6606 ,  Y10T29/49117 ,  Y10T29/49124

摘要： A method of manufacturing a semiconductor device, includes increasing adherence between a susceptor as a heating element, and a semiconductor substrate disposed on the susceptor, by using an adherence increasing mechanism, or increasing heat transmitted to a semiconductor substrate, which is disposed on a susceptor as a heating element, by using a transmitted-heat increasing mechanism; and heating the semiconductor substrate to have a predetermined temperature by heating the susceptor. The adherence increasing mechanism may include the susceptor and one of a heavy-weight stone disposed on the semiconductor substrate, a cap disposed on the semiconductor substrate and engaged with the susceptor, and an adhesive layer provided between the susceptor and the semiconductor substrate. The transmitted-heat increasing mechanism may include the susceptor and small pieces which are disposed on the semiconductor substrate and have radiated-light absorption ability. The susceptor may hold a plurality of the semiconductor substrates in a stacked form.

摘要翻译： 一种制造半导体器件的方法包括通过使用附着增加机构增加作为加热元件的基座和设置在基座上的半导体基板之间的粘附性，或者增加传输到半导体基板的热量，该半导体基板设置在基座 作为加热元件，通过使用透热增加机构; 并且通过加热所述基座来加热所述半导体衬底以具有预定温度。 附着增加机构可以包括基座和设置在半导体衬底上的重量级的石块之一，设置在半导体衬底上并与基座接合的帽以及设置在基座和半导体衬底之间的粘合剂层。 透热增加机构可以包括设置在半导体衬底上并具有辐射光吸收能力的基座和小片。 基座可以以堆叠的形式保持多个半导体衬底。

公开(公告)号：US20070262387A1

公开(公告)日：2007-11-15

申请号：US11798152

申请日：2007-05-10

申请人： Kenichi Nonaka ,  Takeshi Kato ,  Kenji Oogushi ,  Yoshihiko Higashidani ,  Yoshimitsu Saito ,  Kenji Okamoto

发明人： Kenichi Nonaka ,  Takeshi Kato ,  Kenji Oogushi ,  Yoshihiko Higashidani ,  Yoshimitsu Saito ,  Kenji Okamoto

IPC分类号： H01L23/62

CPC分类号： H01L23/057 ,  H01L23/3735 ,  H01L24/45 ,  H01L24/48 ,  H01L25/072 ,  H01L2224/32225 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/16195 ,  H01L2924/19107 ,  H01L2924/3011 ,  H05K1/0271 ,  H05K1/0306 ,  H05K3/0061 ,  H05K3/38 ,  H05K2201/0355 ,  H05K2201/068 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00015

摘要： A power semiconductor module having an integral circuit board with a metal substrate electrode, an insulation substrate and a heat sink joined is disclosed. A SiC semiconductor power device is joined to a top of the metal substrate electrode of the circuit board. A difference in average coefficients of thermal expansion between constituent materials of the circuit board in a temperature range from room to joining time temperatures is 2.0 ppm/° C. or less, and a difference in expansion, produced by a difference between a lowest operating temperature and a joining temperature, of the circuit-board constituent materials is 2,000 ppm or less.

摘要翻译： 公开了具有金属基板电极，绝缘基板和散热片接合的集成电路板的功率半导体模块。 SiC半导体功率器件接合到电路板的金属衬底电极的顶部。 在从室温到接合时间温度的温度范围内，电路板的构成材料的平均热膨胀系数的差异为2.0ppm /℃以下，膨胀差由最低工作温度 并且电路板构成材料的接合温度为2000ppm以下。

公开(公告)号：US08703626B2

公开(公告)日：2014-04-22

申请号：US11889403

申请日：2007-08-13

申请人： Koichi Nishikawa ,  Masaaki Shimizu ,  Kenichi Nonaka ,  Seiichi Yokoyama ,  Hideki Hashimoto

发明人： Koichi Nishikawa ,  Masaaki Shimizu ,  Kenichi Nonaka ,  Seiichi Yokoyama ,  Hideki Hashimoto

IPC分类号： H01L21/00

CPC分类号： H01L21/67115 ,  H01L21/67103 ,  H01L21/68721 ,  H01L29/1608 ,  H01L29/6606 ,  Y10T29/49117 ,  Y10T29/49124

摘要： A method of manufacturing a semiconductor device, includes increasing adherence between a susceptor as a heating element, and a semiconductor substrate disposed on the susceptor, by using an adherence increasing mechanism, or increasing heat transmitted to a semiconductor substrate, which is disposed on a susceptor as a heating element, by using a transmitted-heat increasing mechanism; and heating the semiconductor substrate to have a predetermined temperature by heating the susceptor. The adherence increasing mechanism may include the susceptor and one of a heavy-weight stone disposed on the semiconductor substrate, a cap disposed on the semiconductor substrate and engaged with the susceptor, and an adhesive layer provided between the susceptor and the semiconductor substrate. The transmitted-heat increasing mechanism may include the susceptor and small pieces which are disposed on the semiconductor substrate and have radiated-light absorption ability. The susceptor may hold a plurality of the semiconductor substrates in a stacked form.

摘要翻译： 一种制造半导体器件的方法包括通过使用附着增加机构增加作为加热元件的基座和设置在基座上的半导体基板之间的粘附性，或者增加传输到半导体基板的热量，该半导体基板设置在基座 作为加热元件，通过使用透热增加机构; 并且通过加热所述基座来加热所述半导体衬底以具有预定温度。 附着增加机构可以包括基座和设置在半导体衬底上的重量级的石块之一，设置在半导体衬底上并与基座接合的帽以及设置在基座和半导体衬底之间的粘合剂层。 透热增加机构可以包括设置在半导体衬底上并具有辐射光吸收能力的基座和小片。 基座可以以堆叠的形式保持多个半导体衬底。