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    Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0<z<=1, 0<s<=1 and 0<=t<1) on a substrate
    5.
    发明授权
    Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0 失效
    BxAlyGazIn1-xy-zNsPtAs1-st（0 <= x <= 1,0,0 <= y <1,0

    公开(公告)号：US08142566B2

    公开(公告)日：2012-03-27

    申请号：US11659420

    申请日：2005-08-05

    申请人： Kazumasa Kiyomi ,  Hirobumi Nagaoka ,  Hirotaka Oota ,  Isao Fujimura

    发明人： Kazumasa Kiyomi ,  Hirobumi Nagaoka ,  Hirotaka Oota ,  Isao Fujimura

    IPC分类号： H01L21/205 ,  H01L29/20

    CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B29/406

    摘要： A Ga-containing nitride semiconductor single crystal characterized in that (a) the maximum reflectance measured by irradiating the Ga-containing nitride semiconductor single crystal with light at a wavelength of 450 nm is 20% or less and the difference between the maximum reflectance and the minimum reflectance is within 10%, (b) the ratio of maximum value to minimum value (maximum value/minimum value) of the dislocation density measured by a cathode luminescence method is 10 or less, and/or (c) the lifetime measured by a time-resolved photoluminescence method is 95 ps or more.

    摘要翻译： 含Ga的氮化物半导体单晶，其特征在于，（a）通过用含有氮化镓的半导体单晶以450nm的波长的光照射而测定的最大反射率为20％以下，最大反射率与 最小反射率在10％以内，（b）通过阴极发光法测定的位错密度的最大值与最小值（最大值/最小值）的比例为10以下，和/或（c）由 时间分辨的光致发光法为95ps以上。

    Ga-Containing Nitride Semiconductor Single Crystal, Production Method Thereof, and Substrate and Device Using the Crystal
    6.
    发明申请
    Ga-Containing Nitride Semiconductor Single Crystal, Production Method Thereof, and Substrate and Device Using the Crystal 失效
    含Ga的氮化物半导体单晶，其制造方法以及使用晶体的基板和器件

    公开(公告)号：US20080308812A1

    公开(公告)日：2008-12-18

    申请号：US11659420

    申请日：2005-08-05

    申请人： Kazumasa Kiyomi ,  Hirobumi Nagaoka ,  Hirotaka Oota ,  Isao Fujimura

    发明人： Kazumasa Kiyomi ,  Hirobumi Nagaoka ,  Hirotaka Oota ,  Isao Fujimura

    IPC分类号： H01L29/20 ,  H01L21/205

    CPC分类号： C30B29/403 ,  C30B25/02 ,  C30B29/406

    摘要： A Ga-containing nitride semiconductor single crystal characterized in that (a) the maximum reflectance measured by irradiating the Ga-containing nitride semiconductor single crystal with light at a wavelength of 450 nm is 20% or less and the difference between the maximum reflectance and the minimum reflectance is within 10%, (b) the ratio of maximum value to minimum value (maximum value/minimum value) of the dislocation density measured by a cathode luminescence method is 10 or less, and/or (c) the lifetime measured by a time-resolved photoluminescence method is 95 ps or more.

    摘要翻译： 含Ga的氮化物半导体单晶，其特征在于，（a）通过用含有氮化镓的半导体单晶以450nm的波长的光照射而测定的最大反射率为20％以下，最大反射率与 最小反射率在10％以内，（b）通过阴极发光法测定的位错密度的最大值与最小值（最大值/最小值）的比例为10以下，和/或（c）由 时间分辨的光致发光法为95ps以上。