摘要:
A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm−2 is produced by cleaning the surface having a dangling bond density of higher than 14.0 nm−2 with a cleaning agent containing an ammonium salt.
摘要:
A method for efficiently producing a plate-like nitride semiconductor crystal having the desired principal plane in a simple method is provided. A raw material gas is fed to a seed crystal in which a ratio (L/W) of length L in a longitudinal direction and maximum width W, of a plane of projection obtained by projecting a crystal growth face on the seed crystal in a growth direction is from 2 to 400, and the maximum width W is 5 mm or less, thereby growing a plate-like semiconductor crystal on the seed crystal.
摘要:
An NOx storage-and-reduction type catalyst is used which exhibits a saturated NOx storage amount of 5 g or more as NO2 with respect to 1 liter of a catalyst volume at 500° C., and rich spiking is controlled so that an actual NOx storage amount of the NOx storage-and-reduction type catalyst becomes 50% or less of the saturated NOx storage amount.Since the saturated NOx storage amount is large, the NOx storage amount is large even when it is 50% or less, it is possible to prolong intervals of the rich spiking. Then, since NOx storage component stores NOx preferentially into the sites which are likely to store and release NOx, a reduction efficiency is high. Therefore, while prolonging the intervals of the rich spiking and sustaining an effect of mileage improvement, it is possible to improve the reduction efficiency of NOx.
摘要翻译:使用NO 2 X 3存储和还原型催化剂,其表现出5g或更高的饱和的NO x X存储量为NO 2 2与 相对于在500℃下的催化剂体积为1升,并且控制丰富的尖峰,使得实施的NO x x存储和还原的储存量 型催化剂成为饱和的NO x x存储量的50%以下。 由于饱和的NO x X存储量大,所以即使在50%以下时,NO X存储量也很大,因此可以延长丰富的峰值的间隔 。 然后,由于NO x x存储部件优先将NO SUB优先存储到可能存储和释放NO x x的位置,所以还原效率高 。 因此,虽然延长了丰富的飙升的间隔并维持了里程改善的效果,但是可以提高NO x x的降低效率。
摘要:
A method for efficiently producing a plate-like nitride semiconductor crystal having the desired principal plane in a simple method is provided. A raw material gas is fed to a seed crystal in which a ratio (L/W) of length L in a longitudinal direction and maximum width W, of a plane of projection obtained by projecting a crystal growth face on the seed crystal in a growth direction is from 2 to 400, and the maximum width W is 5 mm or less, thereby growing a plate-like semiconductor crystal on the seed crystal.
摘要:
A production process for a nitride semiconductor crystal, comprising growing a semiconductor layer on a seed substrate to obtain a nitride semiconductor crystal, wherein the seed substrate comprises a plurality of seed substrates made of the same material, at least one of the plurality of seed substrates differs in the off-angle from the other seed substrates, and a single semiconductor layer is grown by disposing the plurality of seed substrates in a semiconductor crystal production apparatus, such that when the single semiconductor layer is grown on the plurality of seed substrates, the off-angle distribution in the single semiconductor layer becomes smaller than the off-angle distribution in the plurality of seed substrates.
摘要:
A soot generation amount estimation apparatus obtains a generation speed of a precursor of soot (accordingly, the concentration of the precursor) in consideration of formation of the precursor from fuel, thermal decomposition of the formed precursor, and formation of soot from the formed precursor, and estimates a generation speed of soot (accordingly, the concentration of soot (the generation amount of soot)) in consideration of formation of soot from the precursor, which depends on the concentration of the precursor, and oxidation of the formed soot. The apparatus employs a reaction model in which the reaction process in which soot is generated from fuel is divided into two steps; i.e., a reaction process in which a precursor is generated from fuel and a reaction process in which soot is generated from the precursor. Thus, phenomena, such as a “delay in soot generation” in the reaction process in which soot is generated from fuel, can be accurately simulated.
摘要:
A converter containing a NOx absorbing and reducing catalyst is disposed in the exhaust passage of an internal combustion engine. The upstream half portion (portion of the inlet side) of the substrate of the NOx absorbing and reducing catalyst in the converter carries the oxygen storage component that absorbs oxygen in the exhaust gas when the air-fuel ratio of the exhaust gas is lean and releases the absorbed oxygen when the air-fuel ratio of the exhaust gas flowing in is rich in addition to carrying the NOx absorbing and reducing catalyst. After NOx is absorbed by the NOx absorbing and reducing catalyst as a result of operating the engine at a lean air-fuel ratio, the engine is operated at a rich air-fuel ratio, so that NOx is released from the NOx absorbing and reducing catalyst and is purified by reduction. Here, oxygen is released from the oxygen storage component carried by the upstream half portion of the substrate and is reacted with the H2 and CO components in the exhaust gas, so that the temperature of the NOx absorbing and reducing catalyst is raised within short periods of time due to the heat of reaction. Therefore, the catalyst exhibits increased activity and the NOx absorbing and reducing catalyst exhibits improved NOx purification capability.
摘要:
A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm−2 is produced by cleaning the surface having a dangling bond density of higher than 14.0 nm−2 with a cleaning agent containing an ammonium salt.
摘要:
In a fuel cell system 10, a cracking unit 20 is provided upstream of a reformer 36. When the cracking unit 20 is supplied with oxygen and gasoline as a hydrocarbon-based fuel, the gasoline is partially oxidized and decomposed using oxidation-generated heat to give a hydrocarbon with a lower carbon number. The hydrocarbon with the lower carbon number obtained by such gasoline pyrolysis is fed to the reformer 36 and supplied to a reforming reaction zone.
摘要:
A soot generation amount estimation apparatus obtains a generation speed of a precursor of soot (accordingly, the concentration of the precursor) in consideration of formation of the precursor from fuel, thermal decomposition of the formed precursor, and formation of soot from the formed precursor, and estimates a generation speed of soot (accordingly, the concentration of soot (the generation amount of soot)) in consideration of formation of soot from the precursor, which depends on the concentration of the precursor, and oxidation of the formed soot. The apparatus employs a reaction model in which the reaction process in which soot is generated from fuel is divided into two steps; i.e., a reaction process in which a precursor is generated from fuel and a reaction process in which soot is generated from the precursor. Thus, phenomena, such as a “delay in soot generation” in the reaction process in which soot is generated from fuel, can be accurately simulated.