公开(公告)号：US5182718A

公开(公告)日：1993-01-26

申请号：US500926

申请日：1990-03-29

申请人： Kenji Harafuji ,  Akio Misaka ,  Hiromitsu Hamaguchi ,  Kenji Kawakita

发明人： Kenji Harafuji ,  Akio Misaka ,  Hiromitsu Hamaguchi ,  Kenji Kawakita

IPC分类号： G03F1/00 ,  G03F7/20 ,  H01J37/302

CPC分类号： G03F7/70441 ,  G03F1/36 ,  H01J37/3026

摘要： A method of correcting design patterns in cells, having hierarchial structure and corresponding to exposure patterns, for proximity effects when exposing resist coated on a substrate to a charged-particle beam or to light. A first frame zone is provided having a predetermined width inside the boundary of each cell, and a second frame zone is provided having a predetermined width inside the first frame zone. Proximity effect correction operations are performed such that a pattern in the second frame zone and a pattern inside the second frame zone are used as a pattern to be corrected and a pattern in the first frame zone is used as a reference pattern when correcting pattern data in each cell for proximity effects and a pattern in the first frame zone in each cell is added to the pattern to be corrected and a pattern in the second frame zone in each cell is used as a reference pattern when correcting pattern data in a cell directly overlying each cell for proximity effect.

公开(公告)号：US4998020A

公开(公告)日：1991-03-05

申请号：US500154

申请日：1990-03-28

申请人： Akio Misaka ,  Kenji Kawakita ,  Kenji Harafuji ,  Hiromitsu Hamaguchi

发明人： Akio Misaka ,  Kenji Kawakita ,  Kenji Harafuji ,  Hiromitsu Hamaguchi

IPC分类号： G03F7/20 ,  H01J37/317

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/2059 ,  H01J37/3174 ,  H01J2237/31769

摘要： In formation of a fine pattern with direct electron beam delineation, disclosed is a method of obtaining parameters on an electron scattering intensity distribution expressed with a double Gaussian distribution obtained when exposing a resist with an electron beam. A resist on a substrate is exposed with an electron beam in accordance with an evaluation pattern which comprises a plurality of basic checked patterns each comprising longitudinal and lateral exposed stripes. The basic checked patterns are successively arranged longitudinally and laterally at predetermined intervals on a plane so as to form a plurality of longitudinal pattern rows and lateral pattern rows, widths of the stripes of the basic checked patterns in each of the lateral pattern rows being successively changed so as to be different from each other. The exposure doses for the basic checked patterns in each of the longitudinal pattern rows are successively changed so as to be different at every basic checked pattern, thereby obtaining, as a critical exposure dose, the minimum exposure dose in each of the longitudinal pattern rows on the basis of removed or remaining states of the non-exposed portions of the basic checked patterns to obtain the respective parameters.

摘要翻译： 在形成具有直接电子束描绘的精细图案时，公开了一种获得用电子束曝光抗蚀剂时获得的双高斯分布表示的电子散射强度分布的参数的方法。 根据包括多个基本检查的图案的评估图案，用电子束对基板上的抗蚀剂进行曝光，每个基本检验图案均包括纵向和横向曝光的条纹。 基本检查图案在平面上以预定间隔纵向和横向连续布置，以形成多个纵向图案行和横向图案行，每个横向图案行中的基本检查图案的条纹的宽度相继变化 以便彼此不同。 每个纵向图案行中的基本检查图案的曝光剂量依次改变，以便在每个基本检查图案上不同，从而获得作为临界曝光剂量的每个纵向图案行中的最小曝光剂量 基本检查图案的未曝光部分的移除或剩余状态的基础，以获得相应的参数。

公开(公告)号：US08278014B2

公开(公告)日：2012-10-02

申请号：US13178256

申请日：2011-07-07

申请人： Shigeo Irie ,  Akio Misaka ,  Yuji Nonami ,  Tetsuya Nakamura ,  Chika Harada

发明人： Shigeo Irie ,  Akio Misaka ,  Yuji Nonami ,  Tetsuya Nakamura ,  Chika Harada

IPC分类号： G03F1/00 ,  G03F9/00 ,  G03F7/00

CPC分类号： G03F1/32 ,  G03F1/29

摘要： A photomask includes a transparent substrate having a transparent property against exposing light, a semi-light-shielding portion formed on the transparent substrate, a first opening formed in the semi-light-shielding portion and having a first dimension and a second opening formed in the semi-light-shielding portion and having a second dimension lager than the first dimension. A phase-shifting portion which transmits the exposing light in an opposite phase with respect to the first opening is formed on the transparent substrate around the first opening. A light-shielding portion is formed on the transparent substrate around the second opening.

摘要翻译： 光掩模包括具有对曝光的透明性的透明基板，形成在透明基板上的半遮光部分，形成在半遮光部分中的第一开口和形成在第一尺寸和第二开口中的第一开口 该半光屏蔽部分具有比第一尺寸更大的第二维度。 在第一开口周围的透明基板上形成有相对于第一开口以相反相位透过曝光的相移部。 在第二开口周围的透明基板上形成遮光部。

公开(公告)号：US07771902B2

公开(公告)日：2010-08-10

申请号：US11884451

申请日：2007-02-27

申请人： Akio Misaka

发明人： Akio Misaka

IPC分类号： G03F1/00 ,  H01L21/00

CPC分类号： G03F1/36 ,  G03F1/29

摘要： A mask pattern including, for example, a light-shielding portion 101 and a first transparent portion 104A surrounded with a semi-light-shielding portion 102 are provided on a transparent substrate 100. The mask pattern includes a first pattern region and a second pattern region opposing each other with the semi-light-shielding portion 102 and the first transparent portion 104A sandwiched therebetween.

摘要翻译： 包括例如遮光部分101和由半光屏蔽部分102围绕的第一透明部分104A的掩模图案设置在透明基板100上。掩模图案包括第一图案区域和第二图案 区域与半遮光部分102和夹在其间的第一透明部分104A相对。

公开(公告)号：US20060183035A1

公开(公告)日：2006-08-17

申请号：US11402947

申请日：2006-04-13

申请人： Akio Misaka

发明人： Akio Misaka

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/29 ,  G03F1/32

摘要： A photomask has a semi-light-shielding portion having a light-shielding property and a light-transmitting portion surrounded by the semi-light-shielding portion, and a peripheral portion positioned in the periphery of the light-transmitting portion. The semi-light-shielding portion and the light-transmitting portion transmit exposure light in the same phase, whereas the peripheral portion transmits exposure light in a phase opposite to that of the light-transmitting portion.

摘要翻译： 光掩模具有遮光性的半遮光部和被半光遮蔽部包围的透光部以及位于透光部的周缘的周边部。 半光屏蔽部分和透光部分以相同的相位发射曝光光，而周边部分以与透光部分相反的相位透射曝光光。

公开(公告)号：US20060183033A1

公开(公告)日：2006-08-17

申请号：US11402064

申请日：2006-04-12

申请人： Akio Misaka

发明人： Akio Misaka

IPC分类号： G03C5/00 ,  G03F1/00

CPC分类号： G03F1/29 ,  G03F1/30 ,  G03F1/32

摘要： A mask pattern to be provided on a transparent substrate 2 includes a semi-light-shielding portion 3 which transmits exposure light in the same phase as that of the light-transmitting portion 4 and a phase shifter 5 which transmits exposure light in a phase opposite to that of the light-transmitting portion 4. The semi-light-shielding portion 3 has a transmittance which allows exposure light to be partially transmitted. The phase shifter 5 is provided in a region of the mask pattern in which light transmitted through the phase shifter 5 can cancel part of the light transmitted through the light-transmitting portion 4 and the semi-light-transmitting portion 3.

摘要翻译： 设置在透明基板2上的掩模图案包括透光部分4，该半遮光部分3以与透光部分4相同的相位透射曝光光;以及移相器5，其以相对相反的相位透射曝光光 与透光部4的相反。 半光遮蔽部分3具有允许曝光光部分透射的透射率。 移相器5设置在掩模图案的区域中，透射通过移相器5的光可以抵消透过透光部分4和半透光部分3的一部分光。

公开(公告)号：US07060395B2

公开(公告)日：2006-06-13

申请号：US10399762

申请日：2002-04-22

申请人： Akio Misaka

发明人： Akio Misaka

IPC分类号： G03F9/00

CPC分类号： G03F1/26 ,  G03F1/30 ,  G03F1/32 ,  G03F1/36 ,  G03F7/70125

摘要： A mask pattern 40 including a light-shielding portion 41 constituted by a light-shielding film made of a chromium film or the like and phase shifters 42 and 43 is formed on a transparent substrate 30. The phase shifters 42 and 43 generate a phase difference of 180 degrees with respect to exposure light between the phase shifters and the transparent substrate 30. A first light intensity generated in a light-shielded image formation region corresponding to the mask pattern 40 on an exposed material by the exposure light transmitted through the phase shifters 42 and 43 is not more than four times a second light intensity generated in the light-shielded image formation region by the exposure light that is transmitted through the periphery of the mask pattern 40 on the transparent substrate 30 and goes into the back side of the mask pattern 40.

摘要翻译： 在透明基板30上形成由包括由铬膜等构成的遮光膜构成的遮光部41和移相器42,43的掩模图案40.移相器42,43产生相位差 相对于移相器和透明基板30之间的曝光光线为180度。在通过透射通过移相器的曝光光在曝光材料上对应于掩模图案40的遮光图像形成区域中产生的第一光强度 42和43不超过在透光基板30上通过掩模图案40的周边透射并进入透明基板30的背面的曝光的光在遮光图像形成区域中产生的第二光强度的四倍以下 掩模图案40。

公开(公告)号：US06977133B2

公开(公告)日：2005-12-20

申请号：US10390948

申请日：2003-03-17

申请人： Taichi Koizumi ,  Akio Misaka

发明人： Taichi Koizumi ,  Akio Misaka

IPC分类号： G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G03C5/00

CPC分类号： G03F1/36 ,  G03F7/70441

摘要： A photomask is used for transferring a mask pattern onto a semiconductor substrate. The mask pattern includes a junction at which two line patterns are connected to each other with one line pattern being orthogonal to the other line pattern so as to form a T-shape, or a proximity portion at which two line patterns are located close to each other with one line pattern being substantially orthogonal to the other line pattern so as to form a T-shape. A small pattern is formed on a side edge of the line pattern in the vicinity of the junction or the proximity portion so as to form a wide portion of the line pattern. The small pattern is provided within the range between 0.79 and 1.8 λ/(NA·K) of a distance from the neighboring side edge of the other line pattern, where λ is the wavelength of exposure illumination light, NA is the numerical aperture of a lens used, and K is a transfer reduction ratio.

摘要翻译： 光掩模用于将掩模图案转印到半导体衬底上。 掩模图案包括两个线图案彼此连接的连接点，其中一条线图案与另一条线图形正交以便形成T形，或两个线图案靠近每个位置的邻近部分 另一个，其中一个线图案基本上与另一个线图案正交，从而形成T形。 在接合部或接近部附近的线图案的侧边缘上形成小图案，以形成线条图案的宽部分。 小图案提供在距离另一条线图案的相邻侧边缘的距离在0.79和1.8λ/（NA.K）之间的范围内，其中λ是曝光照明光的波长，NA是数字孔径 所使用的透镜，K是转印缩小率。

公开(公告)号：US20110272815A1

公开(公告)日：2011-11-10

申请号：US13013442

申请日：2011-01-25

申请人： Akio Misaka ,  Yasuko Tabata ,  Hideyuki Arai ,  Takayuki Yamada

发明人： Akio Misaka ,  Yasuko Tabata ,  Hideyuki Arai ,  Takayuki Yamada

IPC分类号： H01L23/528 ,  G06F17/50

CPC分类号： H01L23/528 ,  G06F17/50 ,  G06F17/5072 ,  G06F2217/12 ,  H01L23/522 ,  H01L2924/0002 ,  Y02P90/265 ,  H01L2924/00

摘要： A semiconductor device includes: a plurality of line features including at least one real feature which includes a gate electrode portion, and at least one dummy feature. Two of multiple ones of the dummy feature, and at least one of the line features interposed between the two dummy features and including the at least one real feature form parallel running line features which are evenly spaced. The parallel running line features have an identical width, and line end portions of the parallel running line features are substantially flush. Line end portion uniformization dummy features are formed on extensions of the line end portions of the parallel running line features. The line end portion uniformization dummy features include a plurality of linear features each having a same width as each of the line features and spaced at intervals equal to an interval between each adjacent pair of the line features.

摘要翻译： 半导体器件包括：多个线特征，包括至少一个实际特征，其包括栅电极部分和至少一个虚拟特征。 两个虚拟特征中的两个，并且插入在两个虚拟特征之间并且包括至少一个真实特征的线特征中的至少一个形成均匀间隔的并行运行线特征。 平行运行线特征具有相同的宽度，并行运行线特征的线端部分基本齐平。 线端部均匀化虚拟特征形成在平行运行线特征的线端部的延伸部上。 线端部均匀化虚拟特征包括多个线性特征，每个线性特征具有与每个线特征相同的宽度，并以等于每对相邻线特征之间的间隔的间隔间隔开。

公开(公告)号：US07524620B2

公开(公告)日：2009-04-28

申请号：US11601766

申请日：2006-11-20

申请人： Akio Misaka

发明人： Akio Misaka

IPC分类号： G03C5/00

CPC分类号： G03F1/36 ,  G03F1/26 ,  G03F1/32

摘要： A mask pattern includes a main pattern to be transferred through exposure and an auxiliary pattern that diffracts exposing light and is not transferred through the exposure. The main pattern is made from a shielding portion, a phase shifter or a combination of a semi-shielding portion or a shielding portion and a phase shifter. The auxiliary pattern is made from a shielding portion or a semi-shielding portion. The auxiliary pattern is disposed in a position away from the main pattern by a distance M×(λ/(2×sin φ)) or M×((λ/(2×sin φ))+(λ/(NA+sin φ))), wherein λ indicates a wavelength of the exposing light, M and NA indicate magnification and numerical aperture of a reduction projection optical system of an aligner and φ indicates an oblique incident angle.

摘要翻译： 掩模图案包括通过曝光传送的主图案和衍射曝光并且不通过曝光转印的辅助图案。 主图案由屏蔽部分，移相器或半屏蔽部分或屏蔽部分和移相器的组合构成。 辅助图案由屏蔽部分或半屏蔽部分制​​成。 辅助图案设置在远离主图案的距离Mx（λ/（2xsin phi））或Mx（（λ/（2xsin phi））+（λ/（NA +sinφ）））的位置，其中 λ表示曝光光的波长，M和NA表示对准器的缩小投影光学系统的倍率和数值孔径，phi表示倾斜入射角。