公开(公告)号：US20120260949A1

公开(公告)日：2012-10-18

申请号：US13446255

申请日：2012-04-13

申请人： Kenji SEKIGUCHI ,  Yasushi FUJII ,  Tetsuya SAKAZAKI

发明人： Kenji SEKIGUCHI ,  Yasushi FUJII ,  Tetsuya SAKAZAKI

IPC分类号： B08B3/08 ,  B08B9/093 ,  B08B3/02

CPC分类号： H01L21/67051 ,  C11D7/5004 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/76898

摘要： Disclosed is a liquid processing method capable of rapidly penetrating a liquid chemical into a concave portion formed on the surface of a substrate with the chemical liquid. The liquid processing method includes wetting the inside of the concave portion by supplying an organic solvent having surface tension smaller than the chemical liquid to the substrate, and cleaning the inside of the concave portion with the chemical liquid by supplying a cleaning liquid including the chemical liquid to the substrate and substituting the liquid inside the concave portion with the chemical liquid.

摘要翻译： 公开了一种液体处理方法，其能够将化学液体迅速地渗透到形成在基板表面上的凹部中。 液体处理方法包括通过向基板供给具有小于化学液体的表面张力的有机溶剂来润湿凹部的内部，并且通过提供包含化学液体的清洗液，用化学液体清洁凹部的内部 并用化学液体代替凹部内的液体。

公开(公告)号：US20110089137A1

公开(公告)日：2011-04-21

申请号：US12902721

申请日：2010-10-12

申请人： Hiroshi TANAKA ,  Teruomi MINAMI ,  Yosuke KAWABUCHI ,  Norihiro ITO ,  Fumihiro KAMIMURA ,  Takashi YABUTA ,  Kazuki KOSAI ,  Takeshi UNO ,  Kenji SEKIGUCHI ,  Yasushi FUJII

发明人： Hiroshi TANAKA ,  Teruomi MINAMI ,  Yosuke KAWABUCHI ,  Norihiro ITO ,  Fumihiro KAMIMURA ,  Takashi YABUTA ,  Kazuki KOSAI ,  Takeshi UNO ,  Kenji SEKIGUCHI ,  Yasushi FUJII

IPC分类号： H05K3/00

CPC分类号： H01L21/02057 ,  H01L21/67051

摘要： Provided are a substrate liquid processing apparatus, a substrate liquid processing method, and a computer readable storage medium having a substrate liquid processing program stored therein that can prevent the occurrence of the electrostatic breakdown caused by the discharge of electric charges in a substrate. The substrate liquid processing apparatus processes a circuit-forming surface of the substrate with a chemical liquid. Furthermore, prior to processing the substrate with the chemical liquid, the substrate liquid processing apparatus performs an anti-static process for an surface opposite to the circuit-forming surface of the substrate by an anti-static liquid, thereby emitting the electric charges on the substrate.

摘要翻译： 提供一种基板液体处理装置，基板液体处理方法以及其中存储有基板液体处理程序的计算机可读存储介质，其可以防止由基板中的电荷放电引起的静电破坏的发生。 基板液体处理装置用化学液体处理基板的电路形成表面。 此外，在用化学液体处理基板之前，基板液体处理装置通过防静电液体对与基板的电路形成面相反的表面进行防静电处理，从而将电荷 基质。

公开(公告)号：US20120125368A1

公开(公告)日：2012-05-24

申请号：US13300739

申请日：2011-11-21

申请人： Miyako KANEKO ,  Yasushi FUJII ,  Kenji SEKIGUCHI

发明人： Miyako KANEKO ,  Yasushi FUJII ,  Kenji SEKIGUCHI

IPC分类号： B08B3/08 ,  B08B7/04

CPC分类号： H01L21/67057 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/6708 ,  H01L21/67086

摘要： There are provided a liquid processing method and a liquid processing apparatus capable of removing a resist film without removing an underlying film when removing the resist film from a substrate on which the underlying film and the resist film are formed in sequence from the bottom and into which ions have been previously implanted. In the liquid processing method capable of processing a substrate by a processing solution, the method includes removing the resist film from the substrate by supplying the processing solution at a temperature of about 120° C. or higher to the substrate. The processing solution includes a sulfuric acid and a nitric acid at a preset ratio, and the substrate has thereon the underlying film and the resist film formed on the underlying film, and ions have been previously implanted into the substrate.

摘要翻译： 提供了一种液体处理方法和液体处理装置，其能够从底部依次形成基底膜和抗蚀剂膜的基板去除抗蚀剂膜时不去除下面的膜而去除抗蚀剂膜，并且其中 离子已经被预先植入。 在能够通过处理液处理基板的液体处理方法中，该方法包括通过将处理溶液在约120℃以上的温度下供给基板从基板上除去抗蚀剂膜。 该处理溶液包括预设比例的硫酸和硝酸，并且其上具有下面的基底膜和形成在下面的膜上的抗蚀剂膜，并且已经将离子预先注入到基底中。