公开(公告)号：US08337659B2

公开(公告)日：2012-12-25

申请号：US11578099

申请日：2005-10-12

申请人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Takehiko Orii ,  Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： H01L21/306 ,  C23F1/00

CPC分类号： F26B5/005 ,  H01L21/02052 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6708

摘要： A substrate processing apparatus according to the present invention is provided with a spin chuck (3) that holds a substrate (W) and rotates the same. A process liquid supply system (11, . . . ) is disposed to supply a process liquid to the substrate rotated by the spin chuck. There are disposed a fluid nozzle (12) that supplies to the substrate a drying fluid having a higher volatility than that of the process liquid, and an inert gas nozzle (13) that supplies an inert gas to the substrate. A nozzle moving mechanism (15, 52, . . . ) is disposed that moves the nozzles (12, 13) radially outward relative to a rotational center (Po) of the substrate, while maintaining the inert gas nozzle nearer to the rotational center of the substrate than the fluid nozzle.

摘要翻译： 根据本发明的基板处理装置设置有保持基板（W）并使其旋转的旋转卡盘（3）。 处理液体供应系统（11 ...）被设置成将处理液体提供给由旋转卡盘旋转的基板。 设置有一个流体喷嘴（12），其向基体提供具有比处理液体挥发性更高的挥发性的干燥流体;以及惰性气体喷嘴（13），该惰性气体喷嘴向基板供应惰性气体。 设置喷嘴移动机构（15,52 ...），其相对于基板的旋转中心（Po）径向向外移动喷嘴（12,13），同时保持惰性气体喷嘴更靠近基板的旋转中心 衬底比流体喷嘴。

公开(公告)号：US20120125368A1

公开(公告)日：2012-05-24

申请号：US13300739

申请日：2011-11-21

申请人： Miyako KANEKO ,  Yasushi FUJII ,  Kenji SEKIGUCHI

发明人： Miyako KANEKO ,  Yasushi FUJII ,  Kenji SEKIGUCHI

IPC分类号： B08B3/08 ,  B08B7/04

CPC分类号： H01L21/67057 ,  G03F7/423 ,  H01L21/31133 ,  H01L21/6708 ,  H01L21/67086

摘要： There are provided a liquid processing method and a liquid processing apparatus capable of removing a resist film without removing an underlying film when removing the resist film from a substrate on which the underlying film and the resist film are formed in sequence from the bottom and into which ions have been previously implanted. In the liquid processing method capable of processing a substrate by a processing solution, the method includes removing the resist film from the substrate by supplying the processing solution at a temperature of about 120° C. or higher to the substrate. The processing solution includes a sulfuric acid and a nitric acid at a preset ratio, and the substrate has thereon the underlying film and the resist film formed on the underlying film, and ions have been previously implanted into the substrate.

摘要翻译： 提供了一种液体处理方法和液体处理装置，其能够从底部依次形成基底膜和抗蚀剂膜的基板去除抗蚀剂膜时不去除下面的膜而去除抗蚀剂膜，并且其中 离子已经被预先植入。 在能够通过处理液处理基板的液体处理方法中，该方法包括通过将处理溶液在约120℃以上的温度下供给基板从基板上除去抗蚀剂膜。 该处理溶液包括预设比例的硫酸和硝酸，并且其上具有下面的基底膜和形成在下面的膜上的抗蚀剂膜，并且已经将离子预先注入到基底中。

公开(公告)号：US07837804B2

公开(公告)日：2010-11-23

申请号：US10594549

申请日：2005-04-19

申请人： Hiroki Ohno ,  Kenji Sekiguchi

发明人： Hiroki Ohno ,  Kenji Sekiguchi

IPC分类号： B08B7/04

CPC分类号： H01L21/67051 ,  B08B3/02 ,  G02F2001/1316 ,  H01L21/67028 ,  Y10S134/902

摘要： In a dry process after a cleaning process using a cleaning-liquid nozzle and a rinse process using a side rinse nozzle are performed on a wafer W, the wafer W is turned, feeding of pure water to a center point of the wafer W from a pure-water nozzle is started, and substantially at the same, injection of a nitrogen gas from a gas nozzle to a center portion of the wafer W at a point at an adequate distance apart from the center of the wafer W is started. Next, while the pure-water nozzle is caused to scan toward the periphery of the wafer W, the gas nozzle is caused to scan toward the periphery of the wafer W in an area radially inward of the position of the pure-water nozzle after the gas nozzle passes the center of the wafer W.

摘要翻译： 在使用清洗液喷嘴的清洗处理和使用侧面冲洗喷嘴的冲洗处理之后的干燥处理中，在晶片W上进行晶片W的转动，将纯水从晶片W的中心点向 开始纯水喷嘴，并且基本上同样地，开始从距离晶片W的中心足够距离的点将气体从气体喷嘴喷射到晶片W的中心部分。 接下来，当使纯水喷嘴朝向晶片W的周边扫描时，使气体喷嘴在纯水喷嘴的位置的径向向内的区域中朝向晶片W的周边扫描 气体喷嘴通过晶片W的中心。

公开(公告)号：US20100206329A1

公开(公告)日：2010-08-19

申请号：US12707098

申请日：2010-02-17

申请人： Tsukasa WATANABE ,  Naoki SHINDO ,  Hiroki OHNO ,  Kenji SEKIGUCHI

发明人： Tsukasa WATANABE ,  Naoki SHINDO ,  Hiroki OHNO ,  Kenji SEKIGUCHI

IPC分类号： B08B7/00

CPC分类号： H01L21/67051 ,  B24C7/0046 ,  H01L21/02057 ,  Y10S134/902

摘要： Disclosed is a substrate cleaning method for prevent damage to a pattern formed on a substrate. The substrate cleaning method includes cleaning the substrate by striking cleaning particulates carried in a flow of dry air or inert gas against a surface of the substrate, and removing the cleaning particulates.

摘要翻译： 公开了一种用于防止对在基板上形成的图案的损坏的基板清洗方法。 基板清洗方法包括通过将干燥空气或惰性气体中携带的清洁微粒冲击到基板的表面上并清除清洁颗粒来清洁基板。

公开(公告)号：US07691210B2

公开(公告)日：2010-04-06

申请号：US11543819

申请日：2006-10-06

申请人： Takehiko Orii ,  Kenji Sekiguchi ,  Tadashi Iino

发明人： Takehiko Orii ,  Kenji Sekiguchi ,  Tadashi Iino

IPC分类号： B08B3/00

CPC分类号： G03F7/42 ,  G03F7/423

摘要： A resist film removing method for removing a resist film disposed on a substrate and having a cured layer at a surface includes covering the surface of the resist film with a protection film; causing popping in the resist film covered with the protection film; denaturing the resist film and the protection film after causing popping, to be soluble in water; and performing purified water cleaning to remove from the substrate the resist film and the protection film denatured to be soluble in water.

摘要翻译： 用于除去设置在基板上并且在表面上具有固化层的抗蚀剂膜的抗蚀剂膜去除方法包括用保护膜覆盖抗蚀剂膜的表面; 导致用保护膜覆盖的抗蚀剂膜突然出现; 导致抗蚀剂膜和保护膜变质，引起爆裂，溶于水; 并进行净化水清洗，从基板除去抗蚀剂膜和保护膜变性以溶于水。

公开(公告)号：US20080251101A1

公开(公告)日：2008-10-16

申请号：US10594549

申请日：2005-04-19

申请人： Hiroki Ohno ,  Kenji Sekiguchi

发明人： Hiroki Ohno ,  Kenji Sekiguchi

IPC分类号： B08B5/00 ,  B08B3/04 ,  B08B13/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  G02F2001/1316 ,  H01L21/67028 ,  Y10S134/902

摘要： In a dry process after a cleaning process using a cleaning-liquid nozzle and a rinse process using a side rinse nozzle are performed on a wafer W, the wafer W is turned, feeding of pure water to a center point of the wafer W from a pure-water nozzle is started, and substantially at the same, injection of a nitrogen gas from a gas nozzle to a center portion of the wafer W at a point at an adequate distance apart from the center of the wafer W is started. Next, while the pure-water nozzle is caused to scan toward the periphery of the wafer W, the gas nozzle is caused to scan toward the periphery of the wafer W in an area radially inward of the position of the pure-water nozzle after the gas nozzle passes the center of the wafer W.

摘要翻译： 在使用清洗液喷嘴的清洗处理和使用侧面冲洗喷嘴的冲洗处理之后的干燥处理中，在晶片W上进行晶片W的转动，将纯水从晶片W的中心点向 开始纯水喷嘴，并且基本上同样地，开始从距离晶片W的中心足够距离的点将气体从气体喷嘴喷射到晶片W的中心部分。 接下来，当使纯水喷嘴朝向晶片W的周边扫描时，使气体喷嘴在纯水喷嘴的位置的径向向内的区域中朝向晶片W的周边扫描 气体喷嘴通过晶片W的中心。

公开(公告)号：US20080041420A1

公开(公告)日：2008-02-21

申请号：US11628308

申请日：2005-06-01

申请人： Kenji Sekiguchi ,  Hiroki Ohno

发明人： Kenji Sekiguchi ,  Hiroki Ohno

IPC分类号： H01L21/304 ,  B08B7/04

CPC分类号： H01L21/02052 ,  B08B3/02 ,  B08B2203/0288 ,  H01L21/67051 ,  Y10S134/902

摘要： A wafer W is processed by supplying a two-fluid, high pressure jet water, or mega-sonic water onto the wafer W, while rotating the wafer W in an essentially horizontal state. After supply of the cleaning fluid is stopped, the wafer W is dried by rotating the wafer W at a higher speed than that used in supplying the cleaning fluid. No rinsing process using purified water is performed in a period after stopping supply of the cleaning fluid and before rotating the substrate at the higher speed.

摘要翻译： 在基本上水平状态下旋转晶片W的同时，通过向晶片W上供应双流体高压喷射水或大体积的水来处理晶片W. 在停止供给清洗液之后，通过以比供给清洗液所用的速度高的速度旋转晶片W来干燥晶片W. 在停止供给清洗液之后的时间内，在高速旋转基板之前，不进行使用净化水的漂洗处理。

公开(公告)号：US20070125405A1

公开(公告)日：2007-06-07

申请号：US11606159

申请日：2006-11-30

申请人： Kenji Sekiguchi ,  Hiroki Ohno

发明人： Kenji Sekiguchi ,  Hiroki Ohno

IPC分类号： B08B3/00 ,  B08B7/00

CPC分类号： H01L21/67253 ,  B08B3/02 ,  C03C23/0075 ,  C11D7/261 ,  C11D11/0047 ,  H01L21/02057 ,  H01L21/67051

摘要： A substrate cleaning method, including a step of supplying a two-fluid spray made up of a liquid and a gas to the front surface of a substrate, is provided; wherein the supplying of the two-fluid spray is carried out using a mixture of purified water and isopropyl alcohol as a liquid; concentration of the isopropyl alcohol in the mixture is 10 to 60 wt %; and a particle rejection ratio is 80% or greater.

摘要翻译： 提供了一种基板清洗方法，包括将由液体和气体组成的双流体喷射供给到基板的前表面的步骤; 其中使用纯化水和异丙醇作为液体的混合物进行双液体喷雾的供给; 混合物中异丙醇的浓度为10〜60重量％。 粒子排斥率为80％以上。

公开(公告)号：US20070082496A1

公开(公告)日：2007-04-12

申请号：US11543819

申请日：2006-10-06

申请人： Takehiko Orii ,  Kenji Sekiguchi ,  Tadashi Iino

发明人： Takehiko Orii ,  Kenji Sekiguchi ,  Tadashi Iino

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： G03F7/42 ,  G03F7/423

摘要： A resist film removing method for removing a resist film disposed on a substrate and having a cured layer at a surface includes covering the surface of the resist film with a protection film; causing popping in the resist film covered with the protection film; denaturing the resist film and the protection film after causing popping, to be soluble in water; and performing purified water cleaning to remove from the substrate the resist film and the protection film denatured to be soluble in water.

摘要翻译： 用于除去设置在基板上并且在表面上具有固化层的抗蚀剂膜的抗蚀剂膜去除方法包括用保护膜覆盖抗蚀剂膜的表面; 导致用保护膜覆盖的抗蚀剂膜突然出现; 导致抗蚀剂膜和保护膜变质，引起爆裂，溶于水; 并进行净化水清洗，从基板除去抗蚀剂膜和保护膜变性以溶于水。

公开(公告)号：US20070017555A1

公开(公告)日：2007-01-25

申请号：US11394337

申请日：2006-03-31

申请人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

发明人： Kenji Sekiguchi ,  Noritaka Uchida ,  Satoru Tanaka ,  Hiroki Ohno

IPC分类号： C23G1/00 ,  B08B3/00 ,  B08B5/04 ,  B08B7/00

CPC分类号： H01L21/67051 ,  B08B3/02 ,  B08B3/024 ,  B08B3/04 ,  H01L21/6708 ,  Y10S134/902

摘要： A substrate (W) is processed with the use of a process liquid such as a deionized water. Then, a first fluid which is more volatile than the process liquid is supplied to an upper surface of the substrate (W) from a fluid nozzle (12) to form a liquid film. Next, a second fluid which is more volatile than the process liquid is supplied to the upper surface of the substrate (W) from the fluid nozzle (12), while the wafer (W) is being rotated. During this supply operation, a supply position (Sf) of the second fluid to the substrate (W) is moved radially outward from a rotational center (Po) of the substrate (W). As a result, it is possible to prevent the generation of particles on the substrate (W) after it is dried by using the first and second fluids.

摘要翻译： 使用诸如去离子水的工艺液体处理衬底（W）。 然后，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第一流体，形成液膜。 接下来，在晶片（W）旋转的同时，从流体喷嘴（12）向基板（W）的上表面供给比处理液更易挥发的第二流体。 在该供给动作中，第二流体与基板（W）的供给位置（Sf）从基板（W）的旋转中心（Po）向径向外侧移动。 结果，可以防止在通过使用第一和第二流体干燥基板（W）之后产生颗粒。