公开(公告)号：US5702793A

公开(公告)日：1997-12-30

申请号：US201385

申请日：1994-02-24

申请人： Kenji Shimokawa ,  Hitoshi Dohnomae ,  Toshio Mukai ,  Kengo Shimanoe

发明人： Kenji Shimokawa ,  Hitoshi Dohnomae ,  Toshio Mukai ,  Kengo Shimanoe

IPC分类号： G11B11/105 ,  H01F10/32 ,  G11B5/66

CPC分类号： B82Y25/00 ,  G11B11/10582 ,  G11B11/10586 ,  H01F10/3209 ,  Y10S428/90 ,  Y10T428/265

摘要： A high density magneto-optical recording medium utilizing a polycrystalline garnet two-layer film. The film thickness of an under layer of the garnet polycrystal on a glass substrate is made 100 nm or less, and a crystal grain diameter of a recording layer formed thereon is made 0.1 .mu.m or less. Furthermore, the under layer is demagnetized at room temperature. With this, a bit having a regular shape can be written, thus reducing medium noise by a large margin.

摘要翻译： 一种利用多晶石榴石双层膜的高密度磁光记录介质。 玻璃基板上的石榴石多晶体的下层的膜厚为100nm以下，其上形成的记录层的结晶粒径为0.1μm以下。 此外，底层在室温下退磁。 由此，可以写入具有规则形状的位，从而大大减少了介质噪声。

公开(公告)号：US4906550A

公开(公告)日：1990-03-06

申请号：US224011

申请日：1988-07-25

申请人： Kengo Shimanoe ,  Tetsuo Sakamoto ,  Masao Sakashita

发明人： Kengo Shimanoe ,  Tetsuo Sakamoto ,  Masao Sakashita

IPC分类号： H01L21/368 ,  C08F38/00 ,  G03F7/025 ,  H01L21/312 ,  H01L21/47

CPC分类号： G03F7/025 ,  Y10S430/143

摘要： A method of producing a polydiacetylene thin film comprises spreading on a water surface a diacetylene compound having one or more conjugated diacetylene groups, subjecting the diacetylene compound to incomplete polymerization by irradiation with ultraviolet rays to an extent incapable of causing complete polymerization, transferring the spread film to a substrate to form a monolayer or built-up film thereon, and irradiating the transferred film with ultraviolet rays or an electron beam to complete the polymerization thereof.

公开(公告)号：US07006926B2

公开(公告)日：2006-02-28

申请号：US10359696

申请日：2003-02-07

申请人： Shizuko Ono ,  Akira Shibue ,  Noboru Yamazoe ,  Kengo Shimanoe ,  Kenji Obata ,  Norio Miura

发明人： Shizuko Ono ,  Akira Shibue ,  Noboru Yamazoe ,  Kengo Shimanoe ,  Kenji Obata ,  Norio Miura

IPC分类号： G01N19/00

CPC分类号： G01N33/004 ,  Y02A50/244

摘要： A carbon oxide sensor having high sensitivity capable of reduction of influence of humidity is provided. A detection electrode and a counter electrode are provided on one side of an electrolyte, respectively. The detection electrode contains a metal oxide and a metal carbonate including plural components. The metal carbonate preferably contains a first component of alkali metal carbonate and a second component of at least one element selected from the group consisting of alkali earth metal carbonate, transition metal carbonate, zinc carbonate, cadmium carbonate, indium carbonate, lead carbonate and bismuth carbonate. Specifically, it is preferable to contain the first component including Li2CO3 and the second component including at least one element selected from the group consisting of BaCO3, CaCO3 and SrCO3.

摘要翻译： 提供了具有能够降低湿度影响的高灵敏度的碳氧化物传感器。 检测电极和对电极分别设置在电解质的一侧。 检测电极含有金属氧化物和包含多种成分的金属碳酸盐。 金属碳酸盐优选含有碱金属碳酸盐的第一成分和选自碱土金属碳酸盐，过渡金属碳酸盐，碳酸锌，碳酸镉，碳酸铟，碳酸铅和碳酸铋中的至少一种元素的第二成分 。 具体而言，优选含有包含Li 2 CO 3 N的第一成分和包含选自BaCO 3 CO 3的至少一种元素的第二成分， / SUB>，CaCO 3 3和SrCO 3 3。

公开(公告)号：US5560857A

公开(公告)日：1996-10-01

申请号：US320220

申请日：1994-10-11

申请人： Tadashi Sakon ,  Kenichi Uemura ,  Yoshihiro Mori ,  Kengo Shimanoe ,  Susumu Ohtsuka ,  Shuji Munehira

发明人： Tadashi Sakon ,  Kenichi Uemura ,  Yoshihiro Mori ,  Kengo Shimanoe ,  Susumu Ohtsuka ,  Shuji Munehira

IPC分类号： C11D7/08 ,  C11D7/18 ,  H01L21/304 ,  H01L21/306 ,  H01L21/308 ,  C09K13/00 ,  H01L21/00

CPC分类号： H01L21/02052 ,  Y10S438/906

摘要： A cleaning solution for achieving highly accurate cleaning of silicon semiconductors and silicon oxides. The solution which enables a great reduction in the metal contaminants and the number of fine particles adhered on the surfaces and retention of the hydrophilic property of the surfaces to prevent the surfaces from being unstable, comprising an aqueous acidic solution containing 0.005% by weight or more to less than 0.05% by weight hydrogen fluoride and 0.3% by weight or more to 20.0% by weight or less hydrogen peroxide and having a pH in the range from 1 or more to less than 5.

摘要翻译： 用于实现硅半导体和硅氧化物的高精度清洗的清洁溶液。 能够大大减少附着在表面上的金属污染物和细小颗粒的数量，保持表面的亲水性，防止表面不稳定的溶液，其包含含有0.005重量％以上的酸性水溶液 至少于0.05重量％的氟化氢和0.3重量％或更多至20.0重量％或更少的过氧化氢，并且pH在1以上至小于5的范围内。