摘要:
To provide a semiconductor integrated circuit device having improved reliability. An EFEM unit upstream of a plasma processing unit is equipped with a chemical filer for alkali removal. In the plasma processing unit, a semiconductor wafer is subjected to plasma processing with a gas containing fluorine. The resulting semiconductor wafer is put in a carrier via a transfer chamber, load lock chamber and EFEM chamber. During this operation, the concentration of amines in the EFEM chamber is adjusted to be lower than that of amines in a clean room outside the chamber by a chemical filter.
摘要:
A demodulating semiconductor integrated circuit device used in a wireless communication system of an FM-modulation scheme, wherein a circuit for canceling a frequency offset is made of a digital circuit, so as to make a high-accuracy decision as to received data and prevent error frequency offset cancel due to a pseudo pattern contained in the received data. Consequently, a high-accuracy received data decision is carried out.
摘要:
A demodulating semiconductor integrated circuit device used in a wireless communication system of an FM-modulation scheme, wherein a circuit for canceling a frequency offset is made of a digital circuit, so as to make a high-accuracy decision as to received data and prevent error frequency offset cancel due to a pseudo pattern contained in the received data. Consequently, a high-accuracy received data decision is carried out.
摘要:
A demodulating semiconductor integrated circuit device used in a wireless communication system of an FM-modulation scheme, wherein a circuit for canceling a frequency offset is made of a digital circuit, so as to make a high-accuracy decision as to received data and prevent error frequency offset cancel due to a pseudo pattern contained in the received data. Consequently, a high-accuracy received data decision is carried out.
摘要:
According to the present invention, the surface of the sample is cleaned with water immediately after ashing of the resist the quality of which has been changed through ion implantation by ozone-containing gas, or ozone-containing gas and ultraviolet ray, or the sample is cleaned with water without being exposed to the atmosphere after ashing, thereby allowing the number of residues to be reduced to 1/100, decreasing the load in cleaning process by solution, cutting down the semiconductor device production cost and improving the semiconductor device productivity.
摘要:
A detecting circuit for detecting electric abnormality of a pair of feeders is provided with resistors R.sub.A and R.sub.B converting the abnormality of the feeders into a change in voltage, transistors (Q.sub.8, Q.sub.9 and Q.sub.10) supplying or interrupting a current I.sub.B in response to presence or absence of an abnormal state, transistors (Q.sub.5, Q.sub.6 and Q.sub.17) drawing in or blocking a current I.sub.A in response to the abnormal state, a current subtraction element (I) conducting a subtraction of the currents I.sub.B and I.sub.A on an absolute value basis, a current addition element (II) conducting an addition of the currents I.sub.A and I.sub.B, a current addition element (III) adding the output currents of the current subtraction element (I) and current addition element (II), and a voltage comparator (6) subjecting the output current of the current addition element (III) to current-voltage conversion and comparing a voltage thus obtained with a reference voltage so as to obtain an abnormality detection signal, which is used to interrupt the feeding of electricity to the paired feeders when an abnormality is detected.