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    METHOD FOR MANUFACTURING RESIN FILM FOR THIN FILM-CAPACITOR AND THE FILM THEREFOR
    1.
    发明申请
    METHOD FOR MANUFACTURING RESIN FILM FOR THIN FILM-CAPACITOR AND THE FILM THEREFOR 有权
    薄膜电容器及其膜的制造树脂薄膜的方法

    公开(公告)号：US20110117348A1

    公开(公告)日：2011-05-19

    申请号：US12917145

    申请日：2010-11-01

    申请人： Kenro TAKIZAWA ,  Yuzo Morioka ,  Kazuhiro Suzuki ,  Michimasa Ote

    发明人： Kenro TAKIZAWA ,  Yuzo Morioka ,  Kazuhiro Suzuki ,  Michimasa Ote

    IPC分类号： B32B3/00 ,  B29C47/12

    CPC分类号： B29C47/886 ,  B29C47/0021 ,  B29C47/14 ,  B29C47/8845 ,  B29K2079/085 ,  B29K2105/256 ,  C08G73/1046 ,  C08L79/08

    摘要： The present invention provides a method for manufacturing a film for a film capacitor making it possible to produce a film for a film capacitor which has a thickness of 10 μm or less and which is excellent in a heat resistance and a voltage resistance at a high thickness accuracy by using a polyetherimide resin and provides as well a film for a film capacitor. The above manufacturing method comprises the steps of: feeding a molding material 1 containing a polyetherimide resin into an extruding machine 10, extruding a film 50 for a film capacitor immediately downward from a lip part 21 at a tip of a T dice 20 thereof, interposing the film 50 for a film capacitor between a pressing roll 31 and a cooling roll 33 to cool it and winding up the cooled film 50 for a film capacitor having a thickness of 10 μm or less on a winding equipment 40, wherein assuming that a shear rate of the molten molding material 1 in the lip part 21 of the T dice 20 is set to γ [/s] and that a circumferential speed of the cooling roll 33 is set to V [m/s], a ratio V/γ [m] of a circumferential speed V of the cooling roll 33 to a shear rate γ of the molding material 1 falls in a range of 3.0×10−2 to 90×10−2 [m].

    摘要翻译： 本发明提供一种薄膜电容器用薄膜的制造方法，其可以制造厚度为10μm以下的薄膜电容薄膜，其耐热性和耐高压性优异 通过使用聚醚酰亚胺树脂的精度，并提供薄膜电容器的膜。 上述制造方法包括以下步骤：将含有聚醚酰亚胺树脂的成型材料1输送到挤出机10中，将薄膜电容器薄膜50从其唇形部分21的T骰子20的尖端立即向下挤出，插入 用于压辊31和冷却辊33之间的薄膜电容器用薄膜50，在卷绕设备40上冷却并卷绕厚度为10μm以下的薄膜电容器的冷却薄膜50，其中假设剪切 T模20的唇部21中的熔融成型材料1的比例设定为γ[/ s]，冷却辊33的圆周速度设定为V [m / s]，比率V /γ 冷却辊33的圆周速度V与成型材料1的剪切速度γ的[m]在3.0×10 -2〜90×10 -2 [m]的范围内。

    Method for manufacturing resin film for thin film-capacitor and the film therefor
    2.
    发明授权
    Method for manufacturing resin film for thin film-capacitor and the film therefor 有权
    薄膜电容器用树脂薄膜及其薄膜的制造方法

    公开(公告)号：US08524133B2

    公开(公告)日：2013-09-03

    申请号：US12917145

    申请日：2010-11-01

    申请人： Kenro Takizawa ,  Yuzo Morioka ,  Kazuhiro Suzuki ,  Michimasa Ote

    发明人： Kenro Takizawa ,  Yuzo Morioka ,  Kazuhiro Suzuki ,  Michimasa Ote

    IPC分类号： D01D5/16

    CPC分类号： B29C47/886 ,  B29C47/0021 ,  B29C47/14 ,  B29C47/8845 ,  B29K2079/085 ,  B29K2105/256 ,  C08G73/1046 ,  C08L79/08

    摘要： The present invention provides a method for manufacturing a film for a film capacitor making it possible to produce a film for a film capacitor which has a thickness of 10 μm or less and which is excellent in a heat resistance and a voltage resistance at a high thickness accuracy by using a polyetherimide resin and provides as well a film for a film capacitor. The above manufacturing method comprises the steps of: feeding a molding material 1 containing a polyetherimide resin into an extruding machine 10, extruding a film 50 for a film capacitor immediately downward from a lip part 21 at a tip of a T dice 20 thereof, interposing the film 50 for a film capacitor between a pressing roll 31 and a cooling roll 33 to cool it and winding up the cooled film 50 for a film capacitor having a thickness of 10 μm or less on a winding equipment 40, wherein assuming that a shear rate of the molten molding material 1 in the lip part 21 of the T dice 20 is set to γ [/s] and that a circumferential speed of the cooling roll 33 is set to V [m/s], a ratio V/γ [m] of a circumferential speed V of the cooling roll 33 to a shear rate γ of the molding material 1 falls in a range of 3.0×10−2 to 90×10−2 [m].

    摘要翻译： 本发明提供一种薄膜电容器用薄膜的制造方法，其可以制造薄膜电容器薄膜，该薄膜电容器的厚度为10μm以下，耐热性优异，高厚度的耐电压性优异 通过使用聚醚酰亚胺树脂的精度，并提供薄膜电容器的膜。 上述制造方法包括以下步骤：将含有聚醚酰亚胺树脂的成型材料1输送到挤出机10中，将薄膜电容器薄膜50从其唇形部分21的T骰子20的尖端立即向下挤出，插入 用于在压辊31和冷却辊33之间的薄膜电容器用薄膜50，在卷绕设备40上冷却并卷绕厚度为10um以下的薄膜电容器的冷却薄膜50，其中假设剪切 将T形块20的唇部21中的熔融成型材料1的速度设定为γ[/ s]，将冷却辊33的圆周速度设定为V [m / s]，将比率V /γ 冷却辊33的圆周速度V与成型材料1的剪切速度γ的[m]在3.0×10 -2〜90×10 -2 [m]的范围内。

    METHOD FOR MANUFACTURING RESIN FILM FOR THIN FILM-CAPACITOR AND THE FILM THEREFOR
    5.
    发明申请
    METHOD FOR MANUFACTURING RESIN FILM FOR THIN FILM-CAPACITOR AND THE FILM THEREFOR 审中-公开
    薄膜电容器及其膜的制造树脂薄膜的方法

    公开(公告)号：US20110299222A1

    公开(公告)日：2011-12-08

    申请号：US12980962

    申请日：2010-12-29

    申请人： Kazuhiro SUZUKI ,  Takashi Gonda ,  Norimasa Shinada ,  Yuzo Morioka

    发明人： Kazuhiro SUZUKI ,  Takashi Gonda ,  Norimasa Shinada ,  Yuzo Morioka

    IPC分类号： H01G4/08 ,  B29C47/88 ,  H01G4/00

    CPC分类号： H01G4/14 ,  B29C48/08 ,  B29C48/28 ,  B29C48/914 ,  B29C48/9155 ,  B29K2079/085 ,  B29K2227/12 ,  B29L2031/3406 ,  H01G4/18 ,  H01G13/00

    摘要： The present invention provides a method for manufacturing a film for a film capacitor in which a film can be prepared by melt extrusion molding in a thin film having a thickness of 10 μm or less and in which a cost can be cut by simplifying a manufacturing step thereof and a film for a film capacitor. It is a method for manufacturing a film for a film capacitor comprising the steps of charging a melt extrusion molding equipment 10 with a molding material 1 to mold a film 20 for a film capacitor by extruding from a dice 12, interposing the above extruded and molded film 20 for a film capacitor between a pressing roll 31 and a metal roll 32 to cool it and winding up the cooled film 20 for a film capacitor having a thickness of 10 μm or less in order on a winding tube 41 of a winding device 40, wherein the molding material 1 is prepared by adding a fluorocarbon resin to a PEI resin having a glass transition point of 200° C. or higher and a dielectric breakdown voltage of 100 V/μm or more; and a uniaxial elongational viscosity of the above molding material 1 is controlled to a range of 6,000 to 20,000 Pa·s.

    摘要翻译： 本发明提供一种薄膜电容器薄膜的制造方法，其中可以通过熔融挤出成型制备厚度为10μm以下的薄膜的膜，并且通过简化制造步骤可以削减成本 和薄膜电容器用薄膜。 作为薄膜电容器用薄膜的制造方法，其特征在于，包括以下步骤：将熔融挤出成形装置10与成型材料1进行充填，从模具12挤出成形薄膜电容器膜20，插入上述挤出成形品 薄膜20用于压辊31和金属辊32之间的薄膜电容器，以在卷绕装置40的卷绕管41上依次卷绕冷却薄膜20并卷绕厚度为10μm以下的薄膜电容器的冷却膜20 其中，通过向玻璃化转变点为200℃以上，介电击穿电压为100V /μm以上的PEI树脂中添加碳氟化合物树脂，制备成型材料1。 将上述成型材料1的单轴拉伸粘度控制在6000〜20000Pa·s的范围。