公开(公告)号：US5481355A

公开(公告)日：1996-01-02

申请号：US102345

申请日：1993-08-05

申请人： Kenzaburou Iijima ,  Katsufumi Kondo ,  Katsuhiko Masuda ,  Kouji Yataka ,  Yasuyuki Chujo

发明人： Kenzaburou Iijima ,  Katsufumi Kondo ,  Katsuhiko Masuda ,  Kouji Yataka ,  Yasuyuki Chujo

IPC分类号： A63B69/36 ,  G01P3/36 ,  G01P3/68 ,  G01B11/12

CPC分类号： A63B24/0021 ,  A63B69/3658 ,  G01P3/36 ,  G01P3/68 ,  A63B2024/0031 ,  A63B2024/0034 ,  A63B2220/30 ,  A63B2220/35 ,  A63B2220/805

摘要： The initial movement of a spherical body is detected by detecting the intersection with a light beam emitted from trigger light illuminating portion 2 to trigger light-receiving portion 3, and as a result, measurement of time by an arithmetic processing unit is started. During flight, spherical body 1 intersects light beams emitted from surface velocity sensors 4 and 5, the reflected light therein is detected by these surface velocity sensors 4 and 5, and the surface velocity of spherical body 1 is then measured. Spherical body 1 continues in flight and intersects at least two light beams irradiated from multi-beam illuminating portion 6 which are detected by multi-beam light-receiving portion 7. Based on a signal from multi-beam light-receiving portion 7 the arithmetic processing unit measures the time of intersection of spherical body 1 with a light beam, and then calculates the angle of elevation, horizontal angle, velocity and surface velocity of spherical body 1 based on the aforementioned measured time period. Furthermore, this arithmetic processing unit also calculates the amount of directional rotation of spherical body 1 based on the aforementioned calculated angle of elevation, horizontal angle, velocity and surface velocity of spherical body 1.

摘要翻译： 通过检测与从触发光照射部分2发射的光束的交点来触发光接收部分3来检测球体的初始移动，结果，开始由算术处理单元测量时间。 在飞行中，球体1与表面速度传感器4和5发射的光束相交，其中的反射光被这些表面速度传感器4和5检测，然后测量球体1的表面速度。 球形体1在飞行中继续，并与由多光束照射部分6照射的至少两个光束相交，由多光束光接收部分7检测。根据来自多光束光接收部分7的信号，算术处理 单位测量球体1与光束的交叉时间，然后根据上述测量时间周期计算球体1的仰角，水平角，速度和表面速度。 此外，该算术处理单元还基于上述计算的球体1的仰角，水平角，速度和表面速度来计算球体1的定向旋转量。

公开(公告)号：US20060145171A1

公开(公告)日：2006-07-06

申请号：US11371873

申请日：2006-03-08

申请人： Koichi Nitta ,  Takafumi Nakamura ,  Kuniaki Konno ,  Yasuhiko Akaike ,  Yoshiki Endo ,  Katsufumi Kondo

发明人： Koichi Nitta ,  Takafumi Nakamura ,  Kuniaki Konno ,  Yasuhiko Akaike ,  Yoshiki Endo ,  Katsufumi Kondo

IPC分类号： H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014 ,  H01L2924/00

摘要： For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface. The third side surfaces incline to diverge toward the top surface, and the second side surfaces incline to diverge more toward the top surface to extract part of the light from the light emitting layer externally. The first side surfaces are formed by cleavage along cleavable planes.

公开(公告)号：US06548834B2

公开(公告)日：2003-04-15

申请号：US10057283

申请日：2002-01-25

申请人： Hideto Sugawara ,  Koichi Nitta ,  Ryo Saeki ,  Katsufumi Kondo ,  Masanobu Iwamoto

发明人： Hideto Sugawara ,  Koichi Nitta ,  Ryo Saeki ,  Katsufumi Kondo ,  Masanobu Iwamoto

IPC分类号： H01L3300

CPC分类号： H01L33/08 ,  H01L27/15

摘要： A semiconductor light emitting element is proposed that improves a light extraction efficiency without requiring any complicated processes and techniques. The semiconductor light emitting element includes an active layer for emitting first light by current injection, and a light absorbing and emitting section for absorbing a part of the first light and for emitting second light having a greater peak wavelength than the first light. A difference in peak wavelength between the first light and the second light is in a range in which a spectrum of a mixture of the first and second light maintains a unimodal characteristic or is smaller than 0.9 times a half width of the spectrum of the first light.

公开(公告)号：US20120119242A1

公开(公告)日：2012-05-17

申请号：US13052247

申请日：2011-03-21

申请人： Katsufumi Kondo

发明人： Katsufumi Kondo

IPC分类号： H01L33/46

CPC分类号： H01L33/46 ,  H01L33/08 ,  H01L33/20 ,  H01L33/405

摘要： According to one embodiment, a light emitting device includes a support body, a first light emitting portion, a second light emitting portion, and a second reflector. The support body includes a first reflector. The first light emitting portion and the second light emitting portion are provided on the support body and include a light emitting layer. Downward directed light of emission light from the light emitting layer is capable of being reflected upward by the first reflector. The second reflector is interposed between the first light emitting portion and the second light emitting portion, provided on the support body, has a cross-sectional shape expanding downward, and includes a side surface metal layer provided on a side surface of the second reflector.

摘要翻译： 根据一个实施例，发光器件包括支撑体，第一发光部分，第二发光部分和第二反射器。 支撑体包括第一反射器。 第一发光部分和第二发光部分设置在支撑体上并且包括发光层。 来自发光层的发射光的向下定向的光能够被第一反射器向上反射。 第二反射器设置在第一发光部分和第二发光部分之间，设置在支撑体上，具有向下扩展的横截面形状，并且包括设置在第二反射器的侧表面上的侧表面金属层。

公开(公告)号：US20100065813A1

公开(公告)日：2010-03-18

申请号：US12434056

申请日：2009-05-01

申请人： Katsufumi Kondo ,  Ryo Saeki

发明人： Katsufumi Kondo ,  Ryo Saeki

IPC分类号： H01L33/00

CPC分类号： H01L33/0079

摘要： A light emitting device includes a stacked body including at least a light emitting layer made of Inx(AlyGa1-y)1-xP (0≦x≦1, 0≦y≦1), a p-type cladding layer made of Inx(AlyGa1-y)1-xP (0≦x≦1, 0≦y≦1), and a bonding layer made of a semiconductor; and a substrate in which deviation in a lattice constant at a bonding interface with the bonding layer is larger than deviation in lattice constants between the light emitting layer and the bonding layer. The p-type cladding layer is located more distant from the bonding interface than the light emitting layer, and the p-type cladding layer has a carrier concentration of 0.5×1017 cm−3 or more and 3×1017 cm−3 or less.

摘要翻译： 发光器件包括至少包括由Inx（Al y Ga 1-y）1-x P（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1）构成的发光层的堆叠体，由Inx AlyGa1-y）1-xP（0＆nlE; x＆nlE; 1,0＆amp; nlE; y＆nlE; 1）和由半导体制成的接合层; 以及在与结合层的接合界面处的晶格常数偏差大于发光层和接合层之间的晶格常数偏差的基板。 p型覆层与发光层的结合界面更远离，p型覆层的载流子浓度为0.5×10 17 cm -3以上3×1017cm -3以下。

公开(公告)号：US20090224269A1

公开(公告)日：2009-09-10

申请号：US12391283

申请日：2009-02-24

申请人： Ryo Saeki ,  Katsufumi Kondo ,  Yasuo Idei

发明人： Ryo Saeki ,  Katsufumi Kondo ,  Yasuo Idei

IPC分类号： H01L33/00 ,  H01L21/20 ,  H01L29/20

CPC分类号： H01L33/0079

摘要： A semiconductor light emitting device includes: an upper growth layer including a light emitting layer; a transparent substrate through which a radiant light from the light emitting layer passes; and a foundation layer provided between the upper growth layer and the transparent substrate, the foundation layer having a surface-controlling layer and a bonding layer bonded with the transparent substrate. The surface-controlling layer is made of compound semiconductor including at least Ga and As. The upper growth layer is formed on an upper surface of the surface-controlling layer. A lattice constant difference at an interface between the surface-controlling layer and the upper growth layer is smaller than that at an interface between the bonding layer and the transparent substrate.

摘要翻译： 一种半导体发光器件包括：包含发光层的上部生长层; 来自发光层的辐射光通过的透明基板; 以及设置在上部生长层和透明基板之间的基底层，基底层具有表面控制层和与透明基板结合的结合层。 表面控制层由至少包括Ga和As的化合物半导体制成。 上部生长层形成在表面控制层的上表面上。 在表面控制层和上部生长层之间的界面处的晶格常数差小于接合层和透明基板之间的界面处的晶格常数差。

公开(公告)号：US08759852B2

公开(公告)日：2014-06-24

申请号：US13039583

申请日：2011-03-03

申请人： Akihiro Fujiwara ,  Takashi Hakuno ,  Tokuhiko Matsunaga ,  Kimitaka Yoshimura ,  Katsufumi Kondo

发明人： Akihiro Fujiwara ,  Takashi Hakuno ,  Tokuhiko Matsunaga ,  Kimitaka Yoshimura ,  Katsufumi Kondo

IPC分类号： H01L29/22 ,  H01L29/24

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/40 ,  H01L2933/0008

摘要： According to one embodiment, a semiconductor device includes a substrate and a stacked body on the substrate via a joining metal layer. The stacked body includes a device portion and a peripheral portion. The device portion includes from a bottommost layer to a topmost layer included in the stacked body. The peripheral portion surrounding and provided around the device portion; the peripheral portion is a portion of the bottommost layer to the topmost layer included in the stacked body and includes a portion of a semiconductor layer in contact with the joining metal layer.

摘要翻译： 根据一个实施例，半导体器件通过接合金属层包括衬底和衬底上的层叠体。 堆叠体包括器件部分和周边部分。 装置部分包括从堆叠体中包含的最底层到最顶层。 围绕并设置在装置部分周围的周边部分; 外围部分是包括在层叠体中的最下层到最顶层的部分，并且包括与接合金属层接触的半导体层的一部分。

公开(公告)号：US08395172B2

公开(公告)日：2013-03-12

申请号：US12961476

申请日：2010-12-06

申请人： Akira Tanaka ,  Katsufumi Kondo ,  Tokuhiko Matsunaga

发明人： Akira Tanaka ,  Katsufumi Kondo ,  Tokuhiko Matsunaga

IPC分类号： H01L33/00

CPC分类号： H01L33/145 ,  H01L33/30 ,  H01L33/38

摘要： According to one embodiment, a light emitting device includes a light emitting layer, a first conductivity type layer, a first electrode, a second conductivity type layer, a current blocking layer and a second electrode. The first conductivity type layer is provided on the light emitting layer. The first electrode is provided on the first conductivity type layer. The second conductivity type layer is provided under the light emitting layer. The current blocking layer is provided in contact with a partial region of a surface of the second conductivity type layer, and has an outer edge protruding from an outer edge of the first electrode. The second electrode is in contact with a surface of the current blocking layer on opposite side from the second conductivity type layer and a region of the surface of the second conductivity type layer not in contact with the current blocking layer.

摘要翻译： 根据一个实施例，发光器件包括发光层，第一导电类型层，第一电极，第二导电类型层，电流阻挡层和第二电极。 第一导电类型层设置在发光层上。 第一电极设置在第一导电类型层上。 第二导电类型层设置在发光层的下方。 电流阻挡层设置成与第二导电类型层的表面的部分区域接触，并且具有从第一电极的外边缘突出的外边缘。 第二电极与电流阻挡层的与第二导电型层相反一侧的表面与第二导电类型层的与电流阻挡层不接触的区域接触。

公开(公告)号：US08299480B2

公开(公告)日：2012-10-30

申请号：US12391283

申请日：2009-02-24

申请人： Ryo Saeki ,  Katsufumi Kondo ,  Yasuo Idei

发明人： Ryo Saeki ,  Katsufumi Kondo ,  Yasuo Idei

IPC分类号： H01L33/00

CPC分类号： H01L33/0079

摘要： A semiconductor light emitting device includes: an upper growth layer including a light emitting layer; a transparent substrate through which a radiant light from the light emitting layer passes; and a foundation layer provided between the upper growth layer and the transparent substrate, the foundation layer having a surface-controlling layer and a bonding layer bonded with the transparent substrate. The surface-controlling layer is made of compound semiconductor including at least Ga and As. The upper growth layer is formed on an upper surface of the surface-controlling layer. A lattice constant difference at an interface between the surface-controlling layer and the upper growth layer is smaller than that at an interface between the bonding layer and the transparent substrate.

摘要翻译： 一种半导体发光器件包括：包含发光层的上部生长层; 来自发光层的辐射光通过的透明基板; 以及设置在上部生长层和透明基板之间的基底层，基底层具有表面控制层和与透明基板结合的结合层。 表面控制层由至少包括Ga和As的化合物半导体制成。 上部生长层形成在表面控制层的上表面上。 在表面控制层和上部生长层之间的界面处的晶格常数差小于接合层和透明基板之间的界面处的晶格常数差。

公开(公告)号：US07038245B2

公开(公告)日：2006-05-02

申请号：US10388376

申请日：2003-03-13

申请人： Koichi Nitta ,  Takafumi Nakamura ,  Kuniaki Konno ,  Yasuhiko Akaike ,  Yoshiki Endo ,  Katsufumi Kondo

发明人： Koichi Nitta ,  Takafumi Nakamura ,  Kuniaki Konno ,  Yasuhiko Akaike ,  Yoshiki Endo ,  Katsufumi Kondo

IPC分类号： H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L33/38 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014 ,  H01L2924/00

摘要： For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface. The third side surfaces incline to diverge toward the top surface, and the second side surfaces incline to diverge more toward the top surface to extract part of the light from the light emitting layer externally. The first side surfaces are formed by cleavage along cleavable planes.

摘要翻译： 为了提高光提取效率，提高使用该元素的半导体发光元件或半导体发光元件的制造成品率和延长寿命，半导体发光元件包括：发光的发光层; 以及对从发光层发射的光透明的衬底。 衬底限定了在其上支撑发光层的顶表面; 与上表面相对的底表面和连接顶表面和底表面的侧表面。 每个侧表面由从顶表面向底表面延伸的第一侧表面，从第一侧表面向底表面延伸的第二侧表面和从第二侧表面向底表面延伸的第三侧表面组成。 第三侧表面向顶表面倾斜，并且第二侧表面倾斜向顶表面倾斜，以从外部从发光层提取部分光。 第一侧表面通过沿着可切割平面的切割而形成。