公开(公告)号：US11949017B2

公开(公告)日：2024-04-02

申请号：US18067633

申请日：2022-12-16

Applicant: Kepler Computing Inc.

Inventor： Ramesh Ramamoorthy ,  Sasikanth Manipatruni ,  Gaurav Thareja

IPC: H01L21/00 ,  H01L29/20 ,  H01L29/66 ,  H01L29/737 ,  H01L29/74 ,  H01L29/786 ,  H01L49/02 ,  H10B53/30 ,  H10B12/00

CPC classification number: H01L29/78618 ,  H01L28/56 ,  H01L28/57 ,  H01L28/60 ,  H01L28/65 ,  H01L29/2003 ,  H01L29/6684 ,  H01L29/7375 ,  H01L29/7408 ,  H01L29/7869 ,  H10B53/30 ,  H10B12/312 ,  H10B12/36

Abstract: The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a capacitor which in turn comprises a polar layer comprising a base polar material doped with a dopant. The base polar material includes one or more metal elements and one or both of oxygen or nitrogen. The dopant comprises a metal element that is different from the one or more metal elements and is present at a concentration such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV. The capacitor stack additionally comprises first and second crystalline conductive oxide electrodes on opposing sides of the polar layer. The capacitor stack further comprises first and second barrier metal layers on respective ones of the first and second crystalline conductive oxide electrodes on opposing sides of the polar layer.

公开(公告)号：US11888067B2

公开(公告)日：2024-01-30

申请号：US18181922

申请日：2023-03-10

Applicant: Kepler Computing Inc.

Inventor： Ramesh Ramamoorthy ,  Sasikanth Manipatruni ,  Gaurav Thareja

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L29/20 ,  H01L29/74 ,  H01L29/737 ,  H01L49/02 ,  H10B53/30 ,  H10B12/00

CPC classification number: H01L29/78618 ,  H01L28/56 ,  H01L28/57 ,  H01L28/60 ,  H01L28/65 ,  H01L29/2003 ,  H01L29/6684 ,  H01L29/7375 ,  H01L29/7408 ,  H01L29/7869 ,  H10B53/30 ,  H10B12/312 ,  H10B12/36

Abstract: The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a capacitor which in turn comprises a polar layer comprising a base polar material doped with a dopant. The base polar material includes one or more metal elements and one or both of oxygen or nitrogen. The dopant comprises a metal element that is different from the one or more metal elements and is present at a concentration such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV. The capacitor stack additionally comprises first and second crystalline conductive oxide electrodes on opposing sides of the polar layer. The capacitor stack further comprises first and second barrier metal layers on respective ones of the first and second crystalline conductive oxide electrodes on opposing sides of the polar layer.

公开(公告)号：US11888066B2

公开(公告)日：2024-01-30

申请号：US18067653

申请日：2022-12-16

Applicant: Kepler Computing Inc.

Inventor： Ramesh Ramamoorthy ,  Sasikanth Manipatruni ,  Gaurav Thareja

IPC: H01L21/00 ,  H01L29/786 ,  H01L29/66 ,  H01L29/20 ,  H01L29/74 ,  H01L29/737 ,  H01L49/02 ,  H10B53/30 ,  H10B12/00

CPC classification number: H01L29/78618 ,  H01L28/56 ,  H01L28/57 ,  H01L28/60 ,  H01L28/65 ,  H01L29/2003 ,  H01L29/6684 ,  H01L29/7375 ,  H01L29/7408 ,  H01L29/7869 ,  H10B53/30 ,  H10B12/312 ,  H10B12/36

Abstract: The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a capacitor which in turn comprises a polar layer comprising a base polar material doped with a dopant. The base polar material includes one or more metal elements and one or both of oxygen or nitrogen. The dopant comprises a metal element that is different from the one or more metal elements and is present at a concentration such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV. The capacitor stack additionally comprises first and second crystalline conductive oxide electrodes on opposing sides of the polar layer. The capacitor stack further comprises first and second barrier metal layers on respective ones of the first and second crystalline conductive oxide electrodes on opposing sides of the polar layer.

公开(公告)号：US20230215952A1

公开(公告)日：2023-07-06

申请号：US18181525

申请日：2023-03-09

Applicant: Kepler Computing Inc.

Inventor： Ramesh Ramamoorthy ,  Sasikanth Manipatruni ,  Gaurav Thareja

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/737 ,  H01L29/20 ,  H01L29/74

CPC classification number: H01L29/78618 ,  H01L29/6684 ,  H01L29/7375 ,  H01L28/60 ,  H01L29/2003 ,  H01L29/7408 ,  H01L28/57 ,  H01L28/65 ,  H10B53/30 ,  H01L29/7869 ,  H01L28/56 ,  H10B12/312 ,  H10B12/36

Abstract: The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a capacitor which in turn comprises a polar layer comprising a base polar material doped with a dopant. The base polar material includes one or more metal elements and one or both of oxygen or nitrogen. The dopant comprises a metal element that is different from the one or more metal elements and is present at a concentration such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV. The capacitor stack additionally comprises first and second crystalline conductive oxide electrodes on opposing sides of the polar layer. The capacitor stack further comprises first and second barrier metal layers on respective ones of the first and second crystalline conductive oxide electrodes on opposing sides of the polar layer.

公开(公告)号：US20230123515A1

公开(公告)日：2023-04-20

申请号：US18067633

申请日：2022-12-16

Applicant: Kepler Computing Inc.

Inventor： Ramesh Ramamoorthy ,  Sasikanth Manipatruni ,  Gaurav Thareja

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/20 ,  H01L29/74 ,  H01L29/737 ,  H10B53/30

Abstract: The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a capacitor which in turn comprises a polar layer comprising a base polar material doped with a dopant. The base polar material includes one or more metal elements and one or both of oxygen or nitrogen. The dopant comprises a metal element that is different from the one or more metal elements and is present at a concentration such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV. The capacitor stack additionally comprises first and second crystalline conductive oxide electrodes on opposing sides of the polar layer. The capacitor stack further comprises first and second barrier metal layers on respective ones of the first and second crystalline conductive oxide electrodes on opposing sides of the polar layer

公开(公告)号：US20210343873A1

公开(公告)日：2021-11-04

申请号：US17305933

申请日：2021-07-16

Applicant: Kepler Computing Inc.

Inventor： Ramesh Ramamoorthy ,  Sasikanth Manipatruni ,  Gaurav Thareja

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/20 ,  H01L29/74 ,  H01L29/737 ,  H01L49/02 ,  H01L27/11507

Abstract: The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a capacitor which in turn comprises a polar layer comprising a base polar material doped with a dopant. The base polar material includes one or more metal elements and one or both of oxygen or nitrogen. The dopant comprises a metal element that is different from the one or more metal elements and is present at a concentration such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV. The capacitor stack additionally comprises first and second crystalline conductive oxide electrodes on opposing sides of the polar layer. The capacitor stack further comprises first and second barrier metal layers on respective ones of the first and second crystalline conductive oxide electrodes on opposing sides of the polar layer

公开(公告)号：US20200321472A1

公开(公告)日：2020-10-08

申请号：US16842535

申请日：2020-04-07

Applicant: Kepler Computing Inc.

Inventor： Ramesh Ramamoorthy ,  Sasikanth Manipatruni ,  Gaurav Thareja

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/737 ,  H01L29/74 ,  H01L29/20

Abstract: The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a capacitor, which in turn comprises a polar layer comprising a crystalline base polar material doped with a dopant. The base polar material includes one or more metal elements and one or both of oxygen or nitrogen, wherein the dopant comprises a metal element that is different from the one or more metal elements and is present at a concentration such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV. The capacitor additionally comprises first and second crystalline conductive or semiconductive oxide electrodes on opposing sides of the polar layer, wherein the polar layer has a lattice constant that is matched within about 20% of a lattice constant of one or both of the first and second crystalline conductive or semiconductive oxide electrodes. The first crystalline conductive or semiconductive oxide electrode serves as a template for growing the polar layer thereon, such that at least a portion of the polar layer is pseudomorphically formed on the first crystalline conductive or semiconductive oxide electrode.

公开(公告)号：US11916149B2

公开(公告)日：2024-02-27

申请号：US17814330

申请日：2022-07-22

Applicant: Kepler Computing Inc.

Inventor： Ramesh Ramamoorthy ,  Sasikanth Manipatruni ,  Gaurav Thareja

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/20 ,  H01L29/74 ,  H01L29/737 ,  H10B53/30 ,  H10B12/00 ,  H01L49/02

CPC classification number: H01L29/78618 ,  H01L28/56 ,  H01L28/57 ,  H01L28/60 ,  H01L28/65 ,  H01L29/2003 ,  H01L29/6684 ,  H01L29/7375 ,  H01L29/7408 ,  H01L29/7869 ,  H10B53/30 ,  H10B12/312 ,  H10B12/36

Abstract: The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a transistor formed on a silicon substrate and a capacitor electrically connected to the transistor by a conductive via. The capacitor comprises upper and lower conductive oxide electrodes on opposing sides of a polar layer, wherein the lower conductive oxide electrode is electrically connected to a drain of the transistor. The capacitor additionally comprises a polar layer comprising a base polar material doped with a dopant, wherein the base polar material includes one or more metal elements and one or both of oxygen or nitrogen, wherein the dopant comprises a metal element that is different from the one or more metal elements and is present at a concentration such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV. The semiconductor device additionally comprises a lower barrier layer comprising a refractory metal or an intermetallic compound between the lower conductive oxide electrode and the conductive via.

公开(公告)号：US11757043B2

公开(公告)日：2023-09-12

申请号：US17819601

申请日：2022-08-12

Applicant: Kepler Computing Inc.

Inventor： Ramesh Ramamoorthy ,  Sasikanth Manipatruni ,  Gaurav Thareja

IPC: H01L29/00 ,  H01L29/786 ,  H01L29/66 ,  H01L29/20 ,  H01L29/74 ,  H01L29/737 ,  H01L49/02 ,  H10B53/30 ,  H10B12/00

CPC classification number: H01L29/78618 ,  H01L28/56 ,  H01L28/57 ,  H01L28/65 ,  H01L29/2003 ,  H01L29/6684 ,  H01L29/7375 ,  H01L29/7408 ,  H01L29/7869 ,  H10B53/30 ,  H10B12/312 ,  H10B12/36

Abstract: The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a capacitor which in turn comprises a polar layer comprising a base polar material doped with a dopant. The base polar material includes one or more metal elements and one or both of oxygen or nitrogen. The dopant comprises a metal element that is different from the one or more metal elements and is present at a concentration such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV. The capacitor stack additionally comprises first and second crystalline conductive oxide electrodes on opposing sides of the polar layer. The capacitor stack further comprises first and second barrier metal layers on respective ones of the first and second crystalline conductive oxide electrodes on opposing sides of the polar layer.

公开(公告)号：US20230155029A1

公开(公告)日：2023-05-18

申请号：US17815100

申请日：2022-07-26

Applicant: Kepler Computing Inc.

Inventor： Ramesh Ramamoorthy ,  Sasikanth Manipatruni ,  Gaurav Thareja

IPC: H01L29/786 ,  H01L29/66 ,  H01L29/20 ,  H01L29/74 ,  H01L29/737 ,  H10B53/30

CPC classification number: H01L29/78618 ,  H01L29/6684 ,  H01L29/2003 ,  H01L29/7408 ,  H01L29/7869 ,  H01L29/7375 ,  H01L28/65 ,  H01L28/56 ,  H01L28/57 ,  H10B53/30 ,  H10B12/36

Abstract: The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a capacitor comprises a crystalline polar layer comprising a base polar material substitutionally doped with a dopant. The base polar material comprises one or more metal elements and one or both of oxygen or nitrogen. The dopant comprises a metal element of one of 4d series, 5d series, 4f series or 5f series that is different from the one or more metal elements, such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV.