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公开(公告)号:US20130161305A1
公开(公告)日:2013-06-27
申请号:US13599648
申请日:2012-08-30
申请人: Kevin PTASIENSKI , Kevin Robert Smith , Cal Thomas Swanson , Philip Steven Schmidt , Mohammad Nosrati , Jacob Lindley , Allen Norman Boldt , Sanhong Zhang , Louis P. Steinhauser , Dennis Stanley Grimard
发明人: Kevin PTASIENSKI , Kevin Robert Smith , Cal Thomas Swanson , Philip Steven Schmidt , Mohammad Nosrati , Jacob Lindley , Allen Norman Boldt , Sanhong Zhang , Louis P. Steinhauser , Dennis Stanley Grimard
CPC分类号: H01L21/67103 , H01L21/67098 , H01L21/67109 , H01L21/67248 , H01L21/6833 , H05B1/00 , H05B1/02 , H05B1/0202 , H05B1/0227 , H05B1/0233 , H05B3/02 , H05B3/06 , H05B3/20 , H05B2203/005 , H05B2203/013 , H05B2213/03 , Y10T156/10
摘要: An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment that includes a base functional layer having at least one functional zone. A substrate is secured to the base functional layer, and a tuning layer is secured to the substrate opposite the base functional layer. The tuning layer includes a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer has lower power than the base functional layer. Further, a component, such as a chuck by way of example, is secured to the tuning layer opposite the substrate. The substrate defines a thermal conductivity to dissipate a requisite amount of power from the base functional layer.
摘要翻译: 例如,提供一种用于半导体处理设备的加热器,该加热器包括具有至少一个功能区的基本功能层。 将基板固定到基底功能层,并且调谐层固定到与基底功能层相对的基板。 调谐层包括多个区域,其数量大于基底功能层的区域,并且调谐层具有比基底功能层低的功率。 此外,通过示例的方式将诸如卡盘的部件固定到与基板相对的调谐层。 衬底限定热导率以从基底功能层消散所需量的功率。
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公开(公告)号:US09263305B2
公开(公告)日:2016-02-16
申请号:US13599648
申请日:2012-08-30
申请人: Kevin Ptasienski , Kevin Robert Smith , Cal Thomas Swanson , Philip Steven Schmidt , Mohammad Nosrati , Jacob Robert Lindley , Allen Norman Boldt , Sanhong Zhang , Louis P. Steinhauser , Dennis Stanley Grimard
发明人: Kevin Ptasienski , Kevin Robert Smith , Cal Thomas Swanson , Philip Steven Schmidt , Mohammad Nosrati , Jacob Robert Lindley , Allen Norman Boldt , Sanhong Zhang , Louis P. Steinhauser , Dennis Stanley Grimard
CPC分类号: H01L21/67103 , H01L21/67098 , H01L21/67109 , H01L21/67248 , H01L21/6833 , H05B1/00 , H05B1/02 , H05B1/0202 , H05B1/0227 , H05B1/0233 , H05B3/02 , H05B3/06 , H05B3/20 , H05B2203/005 , H05B2203/013 , H05B2213/03 , Y10T156/10
摘要: An apparatus is provided, by way of example, a heater for use in semiconductor processing equipment that includes a base functional layer having at least one functional zone. A substrate is secured to the base functional layer, and a tuning layer is secured to the substrate opposite the base functional layer. The tuning layer includes a plurality of zones that is greater in number than the zones of the base functional layer, and the tuning layer has lower power than the base functional layer. Further, a component, such as a chuck by way of example, is secured to the tuning layer opposite the substrate. The substrate defines a thermal conductivity to dissipate a requisite amount of power from the base functional layer.
摘要翻译: 例如,提供一种用于半导体处理设备的加热器,该加热器包括具有至少一个功能区的基本功能层。 将基板固定到基底功能层,并且调谐层固定到与基底功能层相对的基板。 调谐层包括多个区域,其数量大于基底功能层的区域,并且调谐层具有比基底功能层低的功率。 此外,通过示例的方式将诸如卡盘的部件固定到与基板相对的调谐层。 衬底限定热导率以从基底功能层消散所需量的功率。
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公开(公告)号:US09553006B2
公开(公告)日:2017-01-24
申请号:US13599692
申请日:2012-08-30
申请人: Kevin Ptasienski , Kevin Robert Smith , Cal Thomas Swanson , Philip Steven Schmidt , Mohammad Nosrati , Jacob Robert Lindley , Allen Norman Boldt , Sanhong Zhang , Louis P. Steinhauser , Dennis Stanley Grimard
发明人: Kevin Ptasienski , Kevin Robert Smith , Cal Thomas Swanson , Philip Steven Schmidt , Mohammad Nosrati , Jacob Robert Lindley , Allen Norman Boldt , Sanhong Zhang , Louis P. Steinhauser , Dennis Stanley Grimard
CPC分类号: H01L21/67103 , H01L21/67098 , H01L21/67109 , H01L21/67248 , H01L21/6833 , H05B1/00 , H05B1/02 , H05B1/0202 , H05B1/0227 , H05B1/0233 , H05B3/02 , H05B3/06 , H05B3/20 , H05B2203/005 , H05B2203/013 , H05B2213/03 , Y10T156/10
摘要: An apparatus, such as a heater, is provided that includes a base member having at least one fluid passageway. A two-phase fluid is disposed within the fluid passageway, a pressure of the two-phase fluid being controlled such that the two-phase fluid provides at least one of heating and cooling to the base member. A tuning layer is secured to the base member, and the tuning layer includes a plurality of zones. Furthermore, a component, such as a chuck by way of example, is secured to the tuning layer.
摘要翻译: 提供了一种诸如加热器的装置,其包括具有至少一个流体通道的基座构件。 两相流体设置在流体通道内,两相流体的压力被控制,使得两相流体提供加热和冷却至少一个到基底构件。 调谐层被固定到基底构件上,调谐层包括多个区域。 此外,通过示例的方式将诸如卡盘的部件固定到调谐层。
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公开(公告)号:US20130220575A1
公开(公告)日:2013-08-29
申请号:US13599692
申请日:2012-08-30
申请人: Kevin Ptasienski , Kevin Robert SMITH , Cal Thomas Swanson , Philip Steven Schmidt , Mohammad Nosrati , Jacob Robert Lindley , Allen Norman Boldt , Sanhong Zhang , Louis P. Steinhauser , Dennis Stanley Grimard
发明人: Kevin Ptasienski , Kevin Robert SMITH , Cal Thomas Swanson , Philip Steven Schmidt , Mohammad Nosrati , Jacob Robert Lindley , Allen Norman Boldt , Sanhong Zhang , Louis P. Steinhauser , Dennis Stanley Grimard
IPC分类号: H01L21/67 , H05B1/02 , H01L21/683
CPC分类号: H01L21/67103 , H01L21/67098 , H01L21/67109 , H01L21/67248 , H01L21/6833 , H05B1/00 , H05B1/02 , H05B1/0202 , H05B1/0227 , H05B1/0233 , H05B3/02 , H05B3/06 , H05B3/20 , H05B2203/005 , H05B2203/013 , H05B2213/03 , Y10T156/10
摘要: An apparatus, such as a heater, is provided that includes a base member having at least one fluid passageway. A two-phase fluid is disposed within the fluid passageway, a pressure of the two-phase fluid being controlled such that the two-phase fluid provides at least one of heating and cooling to the base member. A tuning layer is secured to the base member, and the tuning layer includes a plurality of zones. Furthermore, a component, such as a chuck by way of example, is secured to the tuning layer.
摘要翻译: 提供了一种诸如加热器的装置,其包括具有至少一个流体通道的基座构件。 两相流体设置在流体通道内,两相流体的压力被控制,使得两相流体提供加热和冷却至少一个到基底构件。 调谐层被固定到基底构件上,调谐层包括多个区域。 此外,通过示例的方式将诸如卡盘的部件固定到调谐层。
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公开(公告)号:US5639334A
公开(公告)日:1997-06-17
申请号:US401641
申请日:1995-03-07
IPC分类号: H01J37/32 , H01L21/3065
CPC分类号: H01J37/32449 , H01J37/3244 , H01J37/32623 , Y10S438/935
摘要: A uniform gas flow is provided at the surface of a planar device or wafer in a processing system having a substantially cylindrical chamber through which processing gases flow toward an asymmetrically located outlet port by using an appropriately disposed collar or baffle along the gas stream in the chamber in the plane of the surface of the planar device or wafer.
摘要翻译: 在具有基本上圆柱形的室的处理系统中的平面装置或晶片的表面处提供均匀的气流,通过使用适当设置的腔室或挡板沿着气室中的气流,处理气体朝着不对称的出口流动 在平面器件或晶片的表面的平面内。
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公开(公告)号:US5789324A
公开(公告)日:1998-08-04
申请号:US820295
申请日:1997-03-18
IPC分类号: H01J37/32 , H01L21/302
CPC分类号: H01J37/32449 , H01J37/3244 , H01J37/32623 , Y10S438/935
摘要: A uniform gas flow is provided at the surface of a planar device or wafer in a processing system having a substantially cylindrical chamber through which processing gases flow toward an asymmetrically located outlet port by using an appropriately disposed collar or baffle along the gas stream in the chamber in the plane of the surface of the planar device or wafer.
摘要翻译: 在具有基本上圆柱形的室的处理系统中的平面装置或晶片的表面处提供均匀的气流,通过使用适当设置的腔室或挡板沿着气室中的气流,处理气体朝着不对称的出口流动 在平面器件或晶片的表面的平面内。
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