Integrated CMOS circuit
    1.
    发明授权
    Integrated CMOS circuit 失效
    集成CMOS电路

    公开(公告)号:US5977815A

    公开(公告)日:1999-11-02

    申请号:US66305

    申请日:1998-04-27

    CPC分类号: H01L27/0921

    摘要: A CMOS circuit (10), which is integrated in a semiconductor substrate, comprises a principal circuit part (12), which includes the major part of the circuit components in a well isolated from the substrate by a substrate diode. The CMOS circuit furthermore comprises a power output stage (16) driving an inductive load (26, 28). A sensor (18) is connected with one output (22, 24) of the power output stage (16) and on detection of a voltage biasing the substrate diode (30, 32) in the conducting direction produces a switching signal at the output. On occurrence of the switching signal produced by the sensor (18) a controllable switch (20) disconnects the supply voltage from the principal circuit part (12). In its own separate well (46) a status memory (14) is formed on the substrate adjacent to the principal circuit part (12), such status memory (14) comprising memory elements for storage of status data of the principal circuit part (12) on disconnection of the supply voltage.

    摘要翻译: PCT No.PCT / EP96 / 04686 Sec。 371日期:1998年4月27日 102(e)1998年4月27日PCT PCT 1996年10月28日PCT公布。 第WO97 / 15952号公报 日期1997年5月1日集成在半导体衬底中的CMOS电路(10)包括主电路部分(12),其包括通过衬底二极管与衬底隔离的电路部件的主要部分。 CMOS电路还包括驱动感性负载(26,28)的功率输出级(16)。 传感器(18)与功率输出级(16)的一个输出(22,24)连接,并且在导通方向上检测到偏压衬底二极管(30,32)的电压在输出端产生开关信号。 在由传感器(18)产生的开关信号的发生中,可控开关(20)断开与主电路部分(12)的电源电压。 在其独立的井(46)中,在与主电路部分(12)相邻的衬底上形成状态存储器(14),该状态存储器(14)包括用于存储主电路部分(12)的状态数据的存储元件 )断开电源电压。

    Transistor structure
    2.
    发明授权
    Transistor structure 失效
    晶体管结构

    公开(公告)号:US4845536A

    公开(公告)日:1989-07-04

    申请号:US88512

    申请日:1987-08-20

    CPC分类号: H01L29/0847

    摘要: The invention relates to a field-effect transistor (1;20) with insulated gate electrode (9;30) which comprises in a semiconductor body (5) a drain diffusion zone (2) connected to a drain electrode (6;32) and a source diffusion zone (3) which is disposed spaced from the drain diffusion zone (2) for forming a channel zone (4) and which is connected to a source electrode (7). The gate electrode (9;32) of said field-effect transistor is disposed on a gate insulating layer (8) over the channel zone (4). For protecting the transistor against high voltages produced by electrostatic charging the drain diffusion zone (2) of the transistor and/or the source diffusion zone (3) between the respective associated electrode (6,7;32) and the channel zone (4) is divided into a plurality of parallel strips (10,11). Integrated circuits are also protected against destruction by high voltages if the insulated gate field-effect transistors connected to their output terminals are constructed in the manner outlined above.

    摘要翻译: 本发明涉及一种具有绝缘栅电极(9; 30)的场效应晶体管(1; 20),其包括在半导体本体(5)中的连接到漏电极(6; 32)的漏极扩散区(2) 源极扩散区(3),其与所述漏极扩散区(2)隔开设置,用于形成沟道区(4),并连接到源电极(7)。 所述场效应晶体管的栅电极(9; 32)设置在沟道区(4)上的栅极绝缘层(8)上。 为了保护晶体管不受静电对晶体管的漏极扩散区域(2)和/或各个相关电极(6,7,32)和沟道区域(4)之间的源极扩散区域(3)产生的高电压的影响, 被分成多个平行条(10,11)。 如果连接到其输出端子的绝缘栅极场效应晶体管以上述方式构建,则集成电路也可以通过高电压进行保护以防止破坏。

    Responder unit for transponder arrangement
    3.
    发明授权
    Responder unit for transponder arrangement 失效
    应答器安排的响应单元

    公开(公告)号:US5438335A

    公开(公告)日:1995-08-01

    申请号:US263300

    申请日:1994-06-21

    摘要: A responder unit for communicating with an interrogator unit which sends an RF interrogation pulse thereto is described. The responder unit includes an energy accumulator which stores the energy contained in the RF interrogation pulse to be used to power the responder unit in the absence of any RF interrogation signal. The responder unit also has a memory for storing read data and a RF threshold detector for detecting termination of the RF interrogation pulse. A RF carrier wave generator under control of the RF threshold detector is operable to activate upon detection of the termination of the RF interrogation pulse. A modulator is provided in the responder unit to modulate the RF carrier with the read data from the memory.

    摘要翻译: 描述了与向其发送RF询问脉冲的询问器单元进行通信的响应单元。 响应器单元包括能量存储器,其存储包含在RF询问脉冲中的能量,用于在没有任何RF询问信号的情况下为响应器单元供电。 响应器单元还具有用于存储读取数据的存储器和用于检测RF询问脉冲的终止的RF阈值检测器。 在RF阈值检测器的控制下的RF载波发生器可操作以在检测到RF询问脉冲的终止时激活。 在响应器单元中提供调制器,以利用来自存储器的读取数据来调制RF载波。

    Arrangement interrogation unit for transponder
    4.
    发明授权
    Arrangement interrogation unit for transponder 失效
    转发器安排询问单元

    公开(公告)号:US5444448A

    公开(公告)日:1995-08-22

    申请号:US6354

    申请日:1993-01-19

    摘要: An interrogation unit which has a control circuit and an RF oscillator is described. The interrogation unit further has a transmitter which receives the output of the RF oscillator and transmits at least one RF interrogation pulse of a first frequency for interrogating the responder unit, causing the responder unit to return read data in the form of a RF response. Also in the interrogation unit is a switch for disabling the output of said transmitter and enabling reception of the RF response upon termination of the RF interrogation signal. The interrogation unit still further has a receiver for receiving the RF response upon termination of the RF interrogation pulse and an interrogation unit demodulator for demodulation of the read data from said RF response.

    摘要翻译: 描述了具有控制电路和RF振荡器的询问单元。 询问单元还具有接收RF振荡器的输出并发送至少一个第一频率的RF询问脉冲的发射机,用于询问应答单元,使响应单元以RF响应的形式返回读数据。 询问单元中也是用于禁止所述发送器的输出并且在RF询问信号终止时能够接收RF响应的开关。 询问单元还具有用于在RF询问脉冲终止时接收RF响应的接收器和用于从所述RF响应解调读取数据的询问单元解调器。