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    Nanostructure array substrate, method for fabricating the same and dye-sensitized solar cell using the same
    2.
    发明授权
    Nanostructure array substrate, method for fabricating the same and dye-sensitized solar cell using the same 有权
    纳米结构阵列基板，其制造方法和使用其的染料敏化太阳能电池

    公开(公告)号：US08877542B2

    公开(公告)日：2014-11-04

    申请号：US13325505

    申请日：2011-12-14

    申请人： Gun Young Jung ,  Hui Song ,  Ki Seok Kim

    发明人： Gun Young Jung ,  Hui Song ,  Ki Seok Kim

    IPC分类号： H01L31/18 ,  H01M14/00 ,  H01G9/20

    CPC分类号： H01M14/005 ,  H01G9/2031 ,  H01G9/2036 ,  H01G9/204 ,  Y02E10/542

    摘要： Disclosed are a nanostructure array substrate, a method for fabricating the same, and a dye-sensitized solar cell by using the same. The nanostructure array substrate includes a plurality of metal oxide nanostructures vertically aligned on the substrate while being separated from each other. The metal oxide nanostructures include nanorods having a ZnO core/TiO2 shell structure or TiO2 nanotubes. The method includes the steps of forming ZnO nanorods vertically aligned from a seed layer formed on a substrate; and coating a TiO2 sol on the ZnO nanorods and sintering the ZnO nanorods to form nanorods having a ZnO core/TiO2 shell structure. The transparency and flexibility of the substrate are ensured. The photoelectric conversion efficiency of the solar cell is improved if the nanostructure array substrate is employed in the photo electrode of the dye-sensitized solar cell.

    摘要翻译： 公开了纳米结构阵列基板，其制造方法和使用该染料敏化太阳能电池的染料敏化太阳能电池。 纳米结构阵列衬底包括在衬底上垂直对准的多个金属氧化物纳米结构，同时彼此分离。 金属氧化物纳米结构包括具有ZnO核/ TiO 2壳结构或TiO 2纳米管的纳米棒。 该方法包括以下步骤：从形成在衬底上的晶种层垂直取向的ZnO纳米棒; 并在ZnO纳米棒上涂覆TiO 2溶胶并烧结ZnO纳米棒以形成具有ZnO核/ TiO2壳结构的纳米棒。 确保了基材的透明性和柔韧性。 如果在染料敏化太阳能电池的光电极中使用纳米结构阵列基板，则太阳能电池的光电转换效率得到改善。

    Apparatus for imprinting lithography and fabrication thereof
    4.
    发明授权
    Apparatus for imprinting lithography and fabrication thereof 失效
    用于压印光刻及其制造的装置

    公开(公告)号：US07141866B1

    公开(公告)日：2006-11-28

    申请号：US10826056

    申请日：2004-04-16

    申请人： M. Saif Islam ,  Gun Young Jung ,  Yong Chen ,  R. Stanley Williams

    发明人： M. Saif Islam ,  Gun Young Jung ,  Yong Chen ,  R. Stanley Williams

    IPC分类号： H01L29/04 ,  H01L31/036

    CPC分类号： H01L21/76838 ,  H01L21/0337

    摘要： An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.

    摘要翻译： 压印装置和制造方法提供具有用于压印的图案的模具。 该装置包括沿[110]方向抛光的半导体衬底。 半导体衬底具有（110）水平平面和湿化学蚀刻沟槽的垂直侧壁。 侧壁与半导体衬底对准并且因此是（111）垂直的晶格面。 半导体衬底包括在侧壁之间的多个垂直结构，其中垂直结构可以是纳米级隔开的。 该方法包括在（111）垂直晶格面的半导体衬底的（110）水平表面的暴露部分中湿式蚀刻具有间隔开（111）垂直侧壁的沟槽。 使用蚀刻比（110）水平晶格面慢的（111）垂直晶格面的化学蚀刻溶液。 该方法还包括形成压印模具。

    Method for fabricating a nano-imprinting mold
    5.
    发明授权
    Method for fabricating a nano-imprinting mold 失效
    用于压印光刻及其制造的装置

    公开(公告)号：US07368395B2

    公开(公告)日：2008-05-06

    申请号：US11601084

    申请日：2006-11-16

    申请人： M. Saif Islam ,  Gun Young Jung ,  Yong Chen ,  R. Stanley Williams

    发明人： M. Saif Islam ,  Gun Young Jung ,  Yong Chen ,  R. Stanley Williams

    IPC分类号： H01L21/461

    CPC分类号： H01L21/76838 ,  H01L21/0337

    摘要： An imprinting apparatus and method of fabrication provide a mold having a pattern for imprinting. The apparatus includes a semiconductor substrate polished in a [110] direction. The semiconductor substrate has a (110) horizontal planar surface and vertical sidewalls of a wet chemical etched trench. The sidewalls are aligned with and therefore are (111) vertical lattice planes of the semiconductor substrate. The semiconductor substrate includes a plurality of vertical structures between the sidewalls, wherein the vertical structures may be nano-scale spaced apart. The method includes wet etching a trench with spaced apart (111) vertical sidewalls in an exposed portion of the (110) horizontal surface of the semiconductor substrate along (111) vertical lattice planes. A chemical etching solution is used that etches the (111) vertical lattice planes slower than the (110) horizontal lattice plane. The method further includes forming the imprinting mold.

    摘要翻译： 压印装置和制造方法提供具有用于压印的图案的模具。 该装置包括沿[110]方向抛光的半导体衬底。 半导体衬底具有（110）水平平面和湿化学蚀刻沟槽的垂直侧壁。 侧壁与半导体衬底对准并且因此是（111）垂直的晶格面。 半导体衬底包括在侧壁之间的多个垂直结构，其中垂直结构可以是纳米级隔开的。 该方法包括在（111）垂直晶格面的半导体衬底的（110）水平表面的暴露部分中湿式蚀刻具有间隔开（111）垂直侧壁的沟槽。 使用蚀刻比（110）水平晶格面慢的（111）垂直晶格面的化学蚀刻溶液。 该方法还包括形成压印模具。

    POLYMER SOLUTION FOR NANOIMPRINT LITHOGRAPHY TO REDUCE IMPRINT TEMPERATURE AND PRESSURE
    6.
    发明申请
    POLYMER SOLUTION FOR NANOIMPRINT LITHOGRAPHY TO REDUCE IMPRINT TEMPERATURE AND PRESSURE 审中-公开
    用于纳米压印的聚合物溶液降低印刷温度和压力

    公开(公告)号：US20090159567A1

    公开(公告)日：2009-06-25

    申请号：US12396963

    申请日：2009-03-03

    申请人： Gun Young Jung ,  Sivapackia Ganapathiappan ,  Yong Chen ,  R. Stanley Williams

    发明人： Gun Young Jung ,  Sivapackia Ganapathiappan ,  Yong Chen ,  R. Stanley Williams

    IPC分类号： B44C1/22 ,  B29C35/08

    CPC分类号： B29C43/003 ,  B29C35/0888 ,  B29C59/022 ,  B29C2035/0827 ,  B29C2043/025 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/033

    摘要： An improved method of forming features on substrates by imprinting is provided. In the method, a polymer solution that contains at least one polymer dissolved in at least one polymerizable monomer and the polymer solution is deposited on the substrate to form a liquid film thereon. Further, the liquid film is cured by causing the at least one monomer to polymerize and optionally cross-linking the at least one polymer to thereby form a polymer film, the polymer film having a glass transition temperature of less than 100° C., and the polymer film is imprinted with a mold having a desired pattern to form a corresponding negative pattern in the polymer film. Alternatively, the liquid film is imprinted with the mold and the liquid film is cured in the presence of the mold to form the polymer film with the negative pattern.

    摘要翻译： 提供了通过压印在基板上形成特征的改进方法。 在该方法中，含有溶解在至少一种可聚合单体中的至少一种聚合物和聚合物溶液的聚合物溶液沉积在基底上以在其上形成液膜。 此外，通过使至少一种单体聚合并任选地交联至少一种聚合物从而形成聚合物膜，使玻璃化转变温度低于100℃的聚合物膜固化，并且 聚合物膜被印有具有所需图案的模具以在聚合物膜中形成相应的负图案。 或者，液体膜用模具印刷，并且在模具存在下使液膜固化，形成具有负图案的聚合物膜。

    Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure
    7.
    发明授权
    Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure 失效
    用于纳米压印光刻的聚合物溶液，以减少压印温度和压力

    公开(公告)号：US07750059B2

    公开(公告)日：2010-07-06

    申请号：US10313596

    申请日：2002-12-04

    申请人： Gun Young Jung ,  Sivapackia Ganapathiappan ,  Yong Chen ,  R. Stanley Williams

    发明人： Gun Young Jung ,  Sivapackia Ganapathiappan ,  Yong Chen ,  R. Stanley Williams

    IPC分类号： B29C35/08

    CPC分类号： B29C43/003 ,  B29C35/0888 ,  B29C59/022 ,  B29C2035/0827 ,  B29C2043/025 ,  B29C2059/023 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/0002 ,  G03F7/033

    摘要： A method of forming features on substrates by imprinting is provided. The method comprises: (a) forming a polymer solution comprising at least one polymer dissolved in at least one polymerizable monomer; and (b) depositing the polymer solution on a substrate to form a liquid film thereon; and then either: (c) curing the liquid film by causing the monomer(s) to polymerize and optionally cross-linking the polymer(s) to thereby form a polymer film, the polymer film having a glass transition temperature (Tg); and imprinting the polymer film with a mold having a desired pattern to form a corresponding negative pattern in the polymer film, or (d) imprinting the liquid film with the mold and curing it to form the polymer film. The temperature of imprinting is as little as 10° C. above the Tg, or even less if the film is in the liquid state. The pressure of the imprinting can be within the range of 100 to 500 psi.

    摘要翻译： 提供了通过压印在基板上形成特征的方法。 该方法包括：（a）形成包含至少一种溶解在至少一种可聚合单体中的聚合物的聚合物溶液; 和（b）将聚合物溶液沉积在基底上以在其上形成液膜; 然后：（c）通过使单体聚合并任选地交联聚合物从而形成聚合物膜来固化液膜，所述聚合物膜具有玻璃化转变温度（Tg）; 并用具有所需图案的模具印刷聚合物膜，以在聚合物膜中形成相应的负图案，或（d）用模具印刷液膜并固化以形成聚合物膜。 压印温度比Tg高出10℃，或者如果薄膜处于液体状态，则其温度更低。 压印的压力可以在100-500psi的范围内。