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    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF
    4.
    发明申请
    DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
    显示装置及其制造方法

    公开(公告)号：US20110057189A1

    公开(公告)日：2011-03-10

    申请号：US12761958

    申请日：2010-04-16

    申请人： Ki-Hun JEONG ,  Byeong-Hoon Cho ,  Jung-Suk Bang ,  Sang-Youn Han ,  Woong-Kwon Kim ,  Sung-Hoon Yang ,  Suk Won Jung ,  Dae-Cheol Kim ,  Kyung-Sook Jeon ,  Seung Mi Seo

    发明人： Ki-Hun JEONG ,  Byeong-Hoon Cho ,  Jung-Suk Bang ,  Sang-Youn Han ,  Woong-Kwon Kim ,  Sung-Hoon Yang ,  Suk Won Jung ,  Dae-Cheol Kim ,  Kyung-Sook Jeon ,  Seung Mi Seo

    IPC分类号： H01L33/08 ,  H01L21/336

    CPC分类号： G06F3/0421 ,  G06F3/0412 ,  H01L27/1251 ,  H01L27/323

    摘要： A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode.

    摘要翻译： 显示装置包括：下面板，包括下基板和形成在下基板上的像素晶体管; 以及面向下面板的上面板，并且包括上基板，形成在上基板上的检测晶体管，以及连接到感测晶体管并传输信号的读出晶体管。 读出晶体管包括形成在上基板上的第一下栅极电极，形成在第一下栅电极上并与第一栅电极重叠的第一半导体层，以及设置在第一半导体层上的第一源电极和第一漏电极。 感测晶体管包括设置在上基板上的遮光膜，与遮光膜接触的第二下栅电极，与第二下栅电极上的遮光膜重叠的第二半导体层，第二源电极 以及形成在第二半导体层上的第二漏电极和与第二源电极和第二漏电极上的第二半导体层重叠的第二上栅电极。

    Display device and manufacturing method thereof
    5.
    发明授权
    Display device and manufacturing method thereof 有权
    显示装置及其制造方法

    公开(公告)号：US08174015B2

    公开(公告)日：2012-05-08

    申请号：US12761958

    申请日：2010-04-16

    申请人： Ki-Hun Jeong ,  Byeong-Hoon Cho ,  Jung-Suk Bang ,  Sang-Youn Han ,  Woong-Kwon Kim ,  Sung-Hoon Yang ,  Suk Won Jung ,  Dae-Cheol Kim ,  Kyung-Sook Jeon ,  Seung Mi Seo

    发明人： Ki-Hun Jeong ,  Byeong-Hoon Cho ,  Jung-Suk Bang ,  Sang-Youn Han ,  Woong-Kwon Kim ,  Sung-Hoon Yang ,  Suk Won Jung ,  Dae-Cheol Kim ,  Kyung-Sook Jeon ,  Seung Mi Seo

    IPC分类号： H01L29/04

    CPC分类号： G06F3/0421 ,  G06F3/0412 ,  H01L27/1251 ,  H01L27/323

    摘要： A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode.

    摘要翻译： 显示装置包括：下面板，包括下基板和形成在下基板上的像素晶体管; 以及面向下面板的上面板，并且包括上基板，形成在上基板上的检测晶体管，以及连接到感测晶体管并传输信号的读出晶体管。 读出晶体管包括形成在上基板上的第一下栅极电极，形成在第一下栅电极上并与第一栅电极重叠的第一半导体层，以及设置在第一半导体层上的第一源电极和第一漏电极。 感测晶体管包括设置在上基板上的遮光膜，与遮光膜接触的第二下栅电极，与第二下栅电极上的遮光膜重叠的第二半导体层，第二源电极 以及形成在第二半导体层上的第二漏电极和与第二源电极和第二漏电极上的第二半导体层重叠的第二上栅电极。