公开(公告)号：US08969188B2

公开(公告)日：2015-03-03

申请号：US13326700

申请日：2011-12-15

申请人： Ki-chul Kim ,  Jong-cheol Lee ,  Heung-ahn Kwon ,  Hyun-wook Lee

发明人： Ki-chul Kim ,  Jong-cheol Lee ,  Heung-ahn Kwon ,  Hyun-wook Lee

IPC分类号： H01L21/44 ,  H01L21/4763 ,  H01L21/28 ,  H01L27/108 ,  H01L49/02 ,  H01L29/423 ,  H01L29/51

CPC分类号： H01L21/28273 ,  H01L21/28282 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/51 ,  H01L29/513

摘要： Methods of manufacturing a semiconductor device including a multi-layer of dielectric layers may include forming a metal oxide layer on a semiconductor substrate and forming a multi-layer of silicate layers including metal atoms and silicon atoms, on the metal oxide layer. The multi-layer of silicate layers may include at least two metallic silicate layers having different silicon concentrations, which are a ratio of silicon atoms among all metal atoms and silicon atoms included in the metallic silicate layer.

摘要翻译： 制造包括多层电介质层的半导体器件的方法可以包括在半导体衬底上形成金属氧化物层，并在金属氧化物层上形成包含金属原子和硅原子的多层硅酸盐层。 硅酸盐层的多层可以包括具有不同硅浓度的至少两个金属硅酸盐层，其是包含在金属硅酸盐层中的所有金属原子和硅原子之间的硅原子的比率。

公开(公告)号：US20120088360A1

公开(公告)日：2012-04-12

申请号：US13326700

申请日：2011-12-15

申请人： Ki-chul Kim ,  Jong-cheol Lee ,  Heung-ahn Kwon ,  Hyun-wook Lee

发明人： Ki-chul Kim ,  Jong-cheol Lee ,  Heung-ahn Kwon ,  Hyun-wook Lee

IPC分类号： H01L21/28

CPC分类号： H01L21/28273 ,  H01L21/28282 ,  H01L27/10852 ,  H01L28/65 ,  H01L29/42324 ,  H01L29/4234 ,  H01L29/51 ,  H01L29/513

摘要： Methods of manufacturing a semiconductor device including a multi-layer of dielectric layers may include forming a metal oxide layer on a semiconductor substrate and forming a multi-layer of silicate layers including metal atoms and silicon atoms, on the metal oxide layer. The multi-layer of silicate layers may include at least two metallic silicate layers having different silicon concentrations, which are a ratio of silicon atoms among all metal atoms and silicon atoms included in the metallic silicate layer.

摘要翻译： 制造包括多层电介质层的半导体器件的方法可以包括在半导体衬底上形成金属氧化物层，并在金属氧化物层上形成包含金属原子和硅原子的多层硅酸盐层。 硅酸盐层的多层可以包括具有不同硅浓度的至少两个金属硅酸盐层，其是包含在金属硅酸盐层中的所有金属原子和硅原子之间的硅原子的比率。