摘要:
An organic semiconductor includes: a compound represented by formula (I): wherein A1 represents O, S or N—R15; each of R11, R12, R13, R14 and R15 independently represents a hydrogen atom or a substituent W as defined in the specification, R11 and R12 may be linked to form a ring; B1 represents a ring structure containing at least one nitrogen atom; and n1 represents an integer of 0 to 2.
摘要:
A merocyanine dye is provided. The merocyanine dye is represented by formula (1). In the formula (1), A1 represents a divalent atomic group, n represents an integer of 1 to 3, A2 and A3 each independently represent an aromatic hydrocarbon ring or a heterocyclic ring having 3 to 18 carbon atoms, and R11 and R12 each independently represent a hydrogen atom, an alkyl group having 1 to 18 carbon atoms, an aryl group having 6 to 18 carbon atoms, or a heterocyclic group having 3 to 18 carbon atoms.
摘要:
A photoelectric conversion device is provided and includes a photoelectric conversion layer containing a compound represented by the following formula (1). Formula (1): In the formula, Z1 represents an atomic group for forming a 5- or 6-membered nitrogen-containing heterocyclic ring; Za represents an atomic group for forming a 5- or 6 membered ring; R1 represents a hydrogen atom, an alkyl group, an alkenyl group, an aryl group or a heterocyclic group; L11 to L14 each represents a methine group which may have a substituent or may form a ring with another methine group; p1 represents 0 or 1; n1 represents an integer of 0 to 4 and when n1 is an integer of 2 or more, each L13 or L14 may be the same as or different from every other L13 or L14; M1 represents an ion for neutralizing the electric charge; and m1 represents a number necessary for neutralization of the electric charge; provided that a compound where Z1 is an atomic group forming a thiazoline nucleus or a thiazole nucleus is excluded.
摘要:
A photoelectric device includes a photoelectric conversion layer containing an organic compound having a partial structure represented by the following formula (I) : wherein R2 and R3 each independently represent a hydrogen atom, an alkyl group, an alkenyl group, an aryl group, or a heterocyclic group.
摘要:
A photoelectric conversion element includes a pair of electrodes, a photoelectric conversion layer, a charge blocking layer, an intermediate layer. The photoelectric conversion layer contains an organic material between the electrodes. The charge blocking layer is disposed between the photoelectric conversion layer and one of the electrodes. The intermediate layer includes an organic compound disposed between the photoelectric conversion layer and the charge blocking layer and having a glass transition temperature of 200° C. or higher.
摘要:
A photoelectric conversion device having: a pair of electrodes; a photoelectric conversion layer sandwiched between the pair of electrodes; and at least one electron blocking layer provided between one electrode of the pair of electrodes and the photoelectric conversion layer, wherein the photoelectric conversion layer contains at least one organic material, and the at least one electron blocking layer has a mixed layer containing fullerene or fullerene derivatives.
摘要:
A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.
摘要:
A photoelectric conversion device is provided, the photoelectric conversion device including: a pair of electrodes; a photoelectric conversion layer arranged between the pair of electrodes and containing an n-type organic semiconductor; and a charge blocking layer arranged between one of the pair of electrodes and the photoelectric conversion layer, the charge blocking layer being formed of a single layer or two or more layers, wherein a difference Δ1 between ionization potential Ip of a layer of the charge blocking layer adjacent to the photoelectric conversion layer and electron affinity Ea of the n-type organic semiconductor is at least 1 eV; and the charge blocking layer has a gross thickness of at least 20 nm.
摘要:
A coated wire includes a core wire, one or more grooved insulation layer coating the core wire, the grooved insulation layer including a silane-crosslinked insulating resin composition and a groove on an outer surface thereof, and a sheath layer coating an outermost layer of the grooved insulation layer.
摘要:
A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride.