公开(公告)号：US20230301111A1

公开(公告)日：2023-09-21

申请号：US17941987

申请日：2022-09-09

Applicant: Kioxia Corporation

Inventor： Kenta YAMADA ,  Yosuke MITSUNO ,  Takuya SUZUKI ,  Katsuyuki KITAMOTO ,  Ken KOMIYA

IPC: H01L27/11575 ,  H01L25/065 ,  H01L25/18 ,  H01L23/00 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11582 ,  H01L25/00

CPC classification number: H01L27/11575 ,  H01L25/0657 ,  H01L25/18 ,  H01L24/08 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11582 ,  H01L24/80 ,  H01L25/50 ,  H01L2224/08145 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/1431 ,  H01L2924/14511

Abstract: A semiconductor storage device includes a processing circuit provided on a substrate, a plurality of first electrodes connected to the processing circuit, and a plurality of second electrodes connected to the plurality of first electrodes. The semiconductor storage device also includes a memory cell array connected to the plurality of second electrodes. The memory cell array includes a block, and the block includes a string unit. Each string unit includes a plurality of memory cells, and a plurality of column-shaped parts penetrating through at least one stack body that is a stack of a plurality of electrode films between which an insulating film is interposed. The semiconductor storage device includes a slit insulating, for each string unit, a source line electrically connected to a portion of the plurality of memory cells and a source line electrically connected to another portion of the memory cells.

公开(公告)号：US20230307050A1

公开(公告)日：2023-09-28

申请号：US17943487

申请日：2022-09-13

Applicant: Kioxia Corporation

Inventor： Keisuke SUDA ,  Ryota SUZUKI ,  Kenta YAMADA

IPC: G11C16/04 ,  G11C5/02 ,  G11C16/26 ,  G11C16/34 ,  G11C16/14 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11582

CPC classification number: G11C16/0483 ,  G11C5/025 ,  G11C16/26 ,  G11C16/3436 ,  G11C16/14 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/11582

Abstract: A semiconductor memory device includes memory blocks arranged in a first direction and bit lines that are arranged in a second direction, and are arranged with the memory blocks in a third direction. The memory block includes first conductive layers arranged in the third direction, a second conductive layer disposed on a side opposite to the bit lines in the third direction with respect to the first conductive layers, semiconductor layers that extend in the third direction, are opposed to the first conductive layers, have one ends in the third direction electrically connected to the second conductive layer, and have the other ends in the third direction electrically connected to the bit lines, and electric charge accumulating films disposed between the first conductive layers and the semiconductor layers. The first conductive layers and the second conductive layer are separated between the memory blocks.

公开(公告)号：US20230077151A1

公开(公告)日：2023-03-09

申请号：US17654261

申请日：2022-03-10

Applicant: Kioxia Corporation

Inventor： Ryota FUJITSUKA ,  Ryota SUZUKI ,  Kenta YAMADA

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11524 ,  H01L27/11556

Abstract: A semiconductor storage device includes a first stack including a plurality of first electrode films stacked in a first direction. A second stack is provided above the first stack and includes a plurality of second electrode films that are stacked in the first direction. A first column portion is provided in the first stack to extend in the first direction and includes a first charge storage film and a first semiconductor layer. A second column portion is provided in the second stack to extend in the first direction and includes a second charge storage film and a second semiconductor layer. A connecting portion is provided between the first column portion and the second column portion, divides the first charge storage film and the second charge storage film from each other, and is configured to electrically connect the first semiconductor layer and the second semiconductor layer to each other.