公开(公告)号：US20240304494A1

公开(公告)日：2024-09-12

申请号：US18596655

申请日：2024-03-06

Applicant: Kioxia Corporation

Inventor： Mariko SUMIYA ,  Mie MATSUO

IPC: H01L21/762 ,  B23K26/03 ,  B23K26/08 ,  H01L21/18 ,  H01L21/268 ,  H01L21/683 ,  H01L21/8238

CPC classification number: H01L21/76259 ,  B23K26/0823 ,  H01L21/185 ,  H01L21/268 ,  H01L21/6838 ,  H01L21/8238 ,  B23K26/03

Abstract: A method of manufacturing a semiconductor device includes forming a bonded substrate including an effective chip area by bonding a first chip including a first device layer on a first substrate via a porous layer and a second chip including a second device layer on a second substrate, irradiating the porous layer in an ineffective chip area surrounding the effective chip area of the bonded substrate with laser light from the first substrate side, and separating the first substrate from the bonded substrate from the porous layer in the ineffective chip area.

公开(公告)号：US20240324195A1

公开(公告)日：2024-09-26

申请号：US18612553

申请日：2024-03-21

Applicant: Kioxia Corporation

Inventor： Hakuba KITAGAWA ,  Mariko SUMIYA ,  Kohei NAKAMURA ,  Hiroaki ASHIDATE ,  Jun TAKAGI ,  Masayuki FUKUMOTO

IPC: H10B41/35 ,  H10B41/10 ,  H10B41/20

CPC classification number: H10B41/35 ,  H10B41/10 ,  H10B41/20

Abstract: A semiconductor device manufacturing method of embodiments includes: forming an insulating film on an outer peripheral portion of a surface of a first substrate; after forming the insulating film, forming a silicon layer in contact with the surface inside the insulating film; and forming a porous silicon layer by making the silicon layer inside the insulating film porous using an anodization method.

公开(公告)号：US20240297078A1

公开(公告)日：2024-09-05

申请号：US18586425

申请日：2024-02-24

Applicant: Kioxia Corporation

Inventor： Mariko SUMIYA ,  Takuro OKUBO

IPC: H01L21/78 ,  H01L21/02 ,  H01L21/3205 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/683 ,  H01L21/762 ,  H01L23/00 ,  H10B80/00

CPC classification number: H01L21/7813 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02614 ,  H01L21/32055 ,  H01L21/3212 ,  H01L21/32134 ,  H01L21/6835 ,  H01L21/76259 ,  H10B80/00 ,  H01L24/80 ,  H01L2221/68386 ,  H01L2224/80006 ,  H01L2924/1431

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes forming a first insulator or a first conductor layer on a first substrate, forming a porous layer on the first insulator or the first conductor layer, forming a first film including a first device, above the porous layer, and forming a second film including a second device, on a second substrate. The method further includes bonding the first substrate and the second substrate to sandwich the first insulator or the first conductor layer, the porous layer, the first film, and the second film. The method further includes separating the first substrate and the second substrate such that the first insulator or the first conductor layer and a first portion of the porous layer remain above the first substrate, and a second portion of the porous layer remains above the second substrate.

公开(公告)号：US20240099009A1

公开(公告)日：2024-03-21

申请号：US18446583

申请日：2023-08-09

Applicant: Kioxia Corporation

Inventor： Mariko SUMIYA ,  Ryosuke YAMAMOTO

IPC: H10B43/35 ,  H01L21/02 ,  H01L21/20 ,  H10B43/27 ,  H10B43/40

CPC classification number: H10B43/35 ,  H01L21/02381 ,  H01L21/2007 ,  H10B43/27 ,  H10B43/40

Abstract: A method for manufacturing a semiconductor device includes: forming a release layer including a first polycrystalline semiconductor layer provided on a first substrate, and a second polycrystalline semiconductor layer provided between the first substrate and the first polycrystalline semiconductor layer and having a p-type impurity concentration which is lower than that of the first polycrystalline semiconductor layer, and an n-type impurity concentration which is higher than that of the first polycrystalline semiconductor layer; subjecting the first polycrystalline semiconductor layer to anodic chemical conversion to form a first porous layer; forming a first device layer on the first porous layer; and bonding together the first device layer and a second device layer provided on a second substrate.