公开(公告)号：US12068031B2

公开(公告)日：2024-08-20

申请号：US17901239

申请日：2022-09-01

Applicant: Kioxia Corporation

Inventor： Jun Deguchi ,  Daisuke Miyashita ,  Atsushi Kawasumi ,  Hidehiro Shiga ,  Shinji Miyano ,  Shinichi Sasaki

IPC: G11C16/08 ,  G11C8/08 ,  G11C8/10

CPC classification number: G11C16/08 ,  G11C8/08 ,  G11C8/10

Abstract: A semiconductor storage device includes a memory cell array including a plurality of word line groups and a plurality of blocks corresponding to the plurality of word line groups. Each of word line groups includes a plurality of word lines and each of the blocks includes a plurality of memory cells. The plurality of memory cells of each block are connected to the respective word lines of a corresponding one of the word line groups. The semiconductor storage device includes a row decoder including a plurality of word line group decoders corresponding to the plurality of word line groups, respectively. Each of the plurality of word line group decoders is configured to drive a word line independent from a word line driven in another of the word line groups, when all of the plurality of word line groups are activated in parallel.