公开(公告)号：US11839077B2

公开(公告)日：2023-12-05

申请号：US17190865

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Toshifumi Kuroda ,  Yusuke Shimada ,  Satoshi Nagashima

IPC: H10B43/20 ,  H10B41/10 ,  H10B41/20 ,  H10B41/35 ,  H10B43/10 ,  H10B43/35 ,  H10B43/27

CPC classification number: H10B43/20 ,  H10B41/10 ,  H10B41/20 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35

Abstract: A semiconductor storage device includes: a first conductive layer and a second conductive layer arranged in a first direction; a plurality of first semiconductor layers facing the first conductive layer, the plurality of first semiconductor layers arranged in a second direction intersecting the first direction; a first charge storage layer disposed between the plurality of first semiconductor layers and the first conductive layer; and a first insulating layer provided between the plurality of first semiconductor layers and the first charge storage layer in the first direction. The first insulating layer includes a first region, a second region, and a third region provided between the first region and the second region in the second direction. A nitrogen concentration in the first region and the second region is lower than a nitrogen concentration in the third region.

公开(公告)号：US11765899B2

公开(公告)日：2023-09-19

申请号：US17191217

申请日：2021-03-03

Applicant: Kioxia Corporation

Inventor： Ryota Narasaki ,  Weili Cai ,  Satoshi Nagashima ,  Takayuki Ishikawa ,  Yusuke Shimada ,  Yefei Han

IPC: H10B43/27 ,  H01L23/522 ,  H10B41/27

CPC classification number: H10B43/27 ,  H01L23/5226 ,  H10B41/27

Abstract: A semiconductor storage device includes a first conductive layer; a first insulating layer between the first and second conductive layers; a second insulating layer between the first conductive layer and the first insulating layer; a third insulating layer between the second conductive layer and the first insulating layer; a fourth insulating layer between the second conductive layer and the third conductive layer; a fifth insulating layer between the second conductive layer and the fourth insulating layer; and a sixth insulating layer between the third conductive layer and the fourth insulating layer. The first conductive layer has a first surface. The second conductive layer has a second surface. A barrier conductive film containing at least one of nitrogen (N) or titanium (Ti) is provided on the first surface and the second surface.