公开(公告)号：US20240304576A1

公开(公告)日：2024-09-12

申请号：US18586366

申请日：2024-02-23

Applicant: Kioxia Corporation

Inventor： Yuya KIYOMURA ,  Ayako KAWANISHI ,  Yuta TAGUCHI ,  Ayumi WATARAI ,  Ippei KUME

IPC: H01L23/00 ,  H01L25/18 ,  H10B80/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/08 ,  H01L25/18 ,  H10B80/00 ,  H01L2224/03848 ,  H01L2224/05009 ,  H01L2224/05017 ,  H01L2224/05018 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05087 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05187 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05647 ,  H01L2224/08145 ,  H01L2924/1438

Abstract: A memory device includes a first chip including a first electrode and a second chip including a second electrode. The first electrode includes a first conductive film having a first surface in contact with the second electrode at a boundary region of the first and second electrodes, a second surface spaced apart from the boundary region, and a third surface between the first surface and the second surface, and having a first portion on the first surface side and a second portion on the second surface side, and includes a second conductive film covering the second surface and the third surface of the first conductive film. A (111) orientation ratio of copper contained in the first portion is higher than a (111) orientation ratio of copper contained in the second portion.