公开(公告)号：US06169794A

公开(公告)日：2001-01-02

申请号：US09078259

申请日：1998-05-13

申请人： Kiyoshi Oshimi ,  Hiroyuki Kida ,  Masaki Watanabe ,  Shinichi Kozuka

发明人： Kiyoshi Oshimi ,  Hiroyuki Kida ,  Masaki Watanabe ,  Shinichi Kozuka

IPC分类号： H04M342

CPC分类号： H04Q3/0029 ,  H04M3/12 ,  H04M3/4228 ,  H04M7/06 ,  H04M2207/12 ,  Y10S707/99931

摘要： In an IN where the same service is provided by a plurality of SCPs, data consistency is maintained when an update occurs to subscriber data as a result of processing a service for a subscriber. When an update is made to a subscriber database in an SCP, update information is sent to the other SCPs by way of a route selected from among a route via a common channel signaling network, a route via a LAN, and a route via an SMS. Updates occurring during backup or restore processing on a main subscriber database in the SMS are accumulated within the SMS, and the accumulated updates are applied to the main subscriber database after completion of the processing.

摘要翻译： 在由多个SCP提供相同服务的IN中，作为处理用户服务的结果对用户数据进行更新时，维持数据一致性。 当对SCP中的用户数据库进行更新时，通过经由公共信道信令网络的路由，经由LAN的路由和经由SMS的路由，通过选择的路由将更新信息发送到其他SCP 。 在SMS中的主用户数据库的备份或恢复处理期间发生的更新被存储在SMS内，并且在完成处理之后累积的更新被应用于主用户数据库。

公开(公告)号：US20070134938A1

公开(公告)日：2007-06-14

申请号：US11299690

申请日：2005-12-13

申请人： Shinichi Kozuka ,  Naoto Umehara

发明人： Shinichi Kozuka ,  Naoto Umehara

IPC分类号： H01L21/31

CPC分类号： H01L21/31122 ,  H01J2237/3341

摘要： A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.

摘要翻译： 能够提高高介电常数绝缘膜的蚀刻控制性的等离子体处理方法。 使用含有惰性气体和还原气体的处理气体的等离子体对具有形成在其上的高介电常数栅极绝缘膜和硬掩模的基板进行蚀刻处理。

公开(公告)号：US4485065A

公开(公告)日：1984-11-27

申请号：US426159

申请日：1982-09-28

申请人： Yoshiharu Hatakeyama ,  Shinichi Kozuka

发明人： Yoshiharu Hatakeyama ,  Shinichi Kozuka

IPC分类号： B29C45/14 ,  B29C45/16 ,  B29C65/72 ,  B65D39/00 ,  B65D39/04 ,  B65D39/18 ,  B29C5/08 ,  B29D9/00 ,  B29D31/00

CPC分类号： B29C45/14 ,  B29C45/1676 ,  B65D39/00 ,  B65D39/0094 ,  B29C2045/1678 ,  B29L2031/565 ,  B65D2539/003

摘要： A bottle closure is formed by: forming a frusto-conical hollow sealing member having an open lower end, of a soft synthetic-resin, and disposing such member in a molding die defining a T-shaped cavity with an upper end of the member being projected into a horizontal portion of the cavity. A molten hard synthetic-resin is injected into the cavity through the open end of the member. Such hard resin is cooled to form a closure cap having embedded therein the upper end of the member, thereby integrally mounting the sealing member with a closure cap.

摘要翻译： 瓶盖通过以下方式形成：形成具有软质合成树脂的开口下端的截头圆锥形中空密封构件，并将该构件设置在限定T形腔的成型模具中，该构件的上端为 投影到空腔的水平部分。 熔融的硬质合成树脂通过构件的开口端注入空腔。 这种硬树脂被冷却以形成一个封闭盖，其中嵌入了该构件的上端，从而将密封构件整体地安装在封闭盖上。

公开(公告)号：US20080261404A1

公开(公告)日：2008-10-23

申请号：US12139029

申请日：2008-06-13

申请人： Shinichi Kozuka ,  Naoto Umehara

发明人： Shinichi Kozuka ,  Naoto Umehara

IPC分类号： H01L21/3065

CPC分类号： H01L21/31122 ,  H01J2237/3341

摘要： A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.

摘要翻译： 能够提高高介电常数绝缘膜的蚀刻控制性的等离子体处理方法。 使用含有惰性气体和还原气体的处理气体的等离子体对具有形成在其上的高介电常数栅极绝缘膜和硬掩模的基板进行蚀刻处理。

公开(公告)号：US4569457A

公开(公告)日：1986-02-11

申请号：US635364

申请日：1984-07-24

申请人： Yoshiharu Hatakeyama ,  Shinichi Kozuka

发明人： Yoshiharu Hatakeyama ,  Shinichi Kozuka

IPC分类号： B29C45/14 ,  B29C45/16 ,  B65D39/00

CPC分类号： B65D39/00 ,  B29C45/14 ,  B29C45/1676 ,  B65D39/0094 ,  B29C2045/1678 ,  B29L2031/565 ,  B65D2539/003

摘要： A bottle closure includes a frusto-conical hollow sealing member open at its lower end and formed of a soft synthetic-resin material, and a closure cap having a T-shape and formed of a hard synthetic-resin material. The upper end of the sealing member is embedded in the closure cap, thereby integrally mounting the sealing member on the closure cap.

摘要翻译： 瓶盖包括在其下端开口并由软质合成树脂材料形成的截头圆锥形中空密封件，以及具有T形并由硬质合成树脂材料形成的封盖。 密封构件的上端嵌入封闭盖中，从而将密封构件整体地安装在封盖上。

公开(公告)号：US20080128272A1

公开(公告)日：2008-06-05

申请号：US11976440

申请日：2007-10-24

申请人： Yasuaki Sonoda ,  Haruki Minoshima ,  Akifumi Iwama ,  Ichiro Tateno ,  Masafumi Nakanishi ,  Kenzo Kano ,  Akiyoshi Ando ,  Shinichi Kozuka

发明人： Yasuaki Sonoda ,  Haruki Minoshima ,  Akifumi Iwama ,  Ichiro Tateno ,  Masafumi Nakanishi ,  Kenzo Kano ,  Akiyoshi Ando ,  Shinichi Kozuka

IPC分类号： C25B9/00 ,  A61L9/00

CPC分类号： F24F3/16 ,  A61L9/145 ,  A61L9/16 ,  A61L2209/14 ,  F24F2003/1617 ,  F24F2003/1675 ,  Y02A50/21 ,  Y02A50/22

摘要： An object is to provide an air bacteria removal device in which leakage of electrolytic water to the outside is eliminated as much as possible and in which maintenance can easily be performed, the air bacteria removal device comprises a main body including a water storage section having a sealed or semi-sealed structure in which the electrolytic water is stored, and a water absorption member for supplying the electrolytic water from the water storage section to an air-liquid contact member by use of a capillary phenomenon, the air-liquid contact member and the water absorption member are integrated and detachably attached to the main body, the water absorption member attached to this main body enters the water storage section, and is submerged into the electrolytic water, and the water storage section is brought into a sealed or semi-sealed state.

摘要翻译： 本发明的目的是提供一种空气细菌去除装置，其中尽可能地消除了电解水向外部的泄漏，并且可以容易地进行维护，该空气细菌除去装置包括主体，该主体包括：储水部， 密封或半密封结构，其中存储电解水;以及吸水部件，其用于通过使用毛细管现象将电解水从储水部供给到气液接触部件，气液接触部件和 吸水部件一体地可拆卸地安装在主体上，安装在该主体上的吸水部件进入蓄水部，浸没在电解水中，蓄水部被形成为密封的或半封闭的， 密封状态。

公开(公告)号：US08030216B2

公开(公告)日：2011-10-04

申请号：US12139029

申请日：2008-06-13

申请人： Shinichi Kozuka ,  Naoto Umehara

发明人： Shinichi Kozuka ,  Naoto Umehara

IPC分类号： H01L21/302

CPC分类号： H01L21/31122 ,  H01J2237/3341

摘要： A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.

摘要翻译： 能够提高高介电常数绝缘膜的蚀刻控制性的等离子体处理方法。 使用含有惰性气体和还原气体的处理气体的等离子体对具有形成在其上的高介电常数栅极绝缘膜和硬掩模的基板进行蚀刻处理。

公开(公告)号：US20100165852A1

公开(公告)日：2010-07-01

申请号：US12636974

申请日：2009-12-14

申请人： Shinichi Kozuka ,  Toshifumi Amano ,  Kazuhiko Hata

发明人： Shinichi Kozuka ,  Toshifumi Amano ,  Kazuhiko Hata

IPC分类号： H04L12/26

CPC分类号： H04L43/50

摘要： A communication path is set from an ingress node to an egress node on the basis of a specified path setting protocol, and a loopback-test signal is transmitted to the egress node through the communication path so as to perform a loopback-test on the egress node. The ingress node receives a loopback-test response signal transmitted from the egress node on which the loopback-test has been performed, and determines whether or not a loopback-test on the egress node has ended normally by analyzing the received loopback-test response signal.

摘要翻译： 根据指定的路径设置协议，从入口节点到出口节点设置通信路径，通过通信路径向出口节点发送环回测试信号，对出口进行环回测试 节点。 入节点接收从已经执行环回测试的出口节点发送的环回测试响应信号，并通过分析接收到的环回测试响应信号来确定出口节点的环回测试是否正常结束 。

公开(公告)号：US07405160B2

公开(公告)日：2008-07-29

申请号：US11299690

申请日：2005-12-13

申请人： Shinichi Kozuka ,  Naoto Umehara

发明人： Shinichi Kozuka ,  Naoto Umehara

IPC分类号： H01L21/302

CPC分类号： H01L21/31122 ,  H01J2237/3341

摘要： A plasma processing method, which enables the etching controllability for a high-dielectric-constant insulating film to be improved. A substrate having a high-dielectric-constant gate insulating film and a hard mask formed thereon is subjected to etching processing using a plasma of a processing gas containing a noble gas and a reducing gas.

摘要翻译： 能够提高高介电常数绝缘膜的蚀刻控制性的等离子体处理方法。 使用含有惰性气体和还原气体的处理气体的等离子体对具有形成在其上的高介电常数栅极绝缘膜和硬掩模的基板进行蚀刻处理。

公开(公告)号：US4989622A

公开(公告)日：1991-02-05

申请号：US215754

申请日：1988-07-06

申请人： Shinichi Kozuka ,  Yukitomo Yuhara

发明人： Shinichi Kozuka ,  Yukitomo Yuhara

IPC分类号： A45C13/10 ,  E05B17/00 ,  E05C19/06 ,  A45D42/02

CPC分类号： E05B17/0033 ,  A45C13/1084 ,  E05C19/066

摘要： In a vanity case including a receptacle, a cover hinged with the receptacle and latch members for maintaining the cover in a closed position, a push piece is provided which is slidably movable along the longitudinal direction of the vanity case. The push piece has a center opening and an arm swingably connected to a rear wall defining the center opening, the arm having a portion extending forwardly from the rear wall and adjacent at least one of the receptacle and cover in the closed position. A stationary abutment is provided for, upon rearward movement of the push piece, abutting against the arm and causing it to swing relative to the rear wall with the front portion of the arm moving in the center opening, thereby forcing the receptacle and cover away from each other.

摘要翻译： 在包括容器的橱柜中，与容器铰接的盖子和用于将盖子保持在关闭位置的闩锁构件，设置有可沿着化妆箱的纵向可滑动地移动的推动件。 所述推动件具有中心开口和可摆动地连接到限定所述中心开口的后壁的臂，所述臂具有从所述后壁向前延伸并且在所述关闭位置中与所述容器和盖中的至少一个相邻的部分。 提供固定支座，用于在推动件向后移动时抵靠臂并使其相对于后壁摆动，同时臂的前部在中间开口中移动，从而迫使插座和盖远离 彼此。