Apparatus for detecting a state of operation of a power semiconductor device
    4.
    发明授权
    Apparatus for detecting a state of operation of a power semiconductor device 有权
    用于检测功率半导体器件的操作状态的装置

    公开(公告)号:US07940034B2

    公开(公告)日:2011-05-10

    申请号:US12123105

    申请日:2008-05-19

    IPC分类号: G05F1/40

    摘要: An embodiment of the invention relates to an apparatus including a power semiconductor device and a processor coupled thereto. The processor is configured to provide a control signal to the power semiconductor device to regulate an output characteristic of the apparatus. The processor models an internal characteristic of the power semiconductor device and alters the control signal if the modeled internal characteristic crosses a threshold value. In an exemplary embodiment, the internal characteristic is a channel temperature of a MOSFET. A sensor such as a thermistor is coupled to or included within the processor to sense a parameter separate from the power semiconductor device, such as a processor temperature, and the processor is configured to adapt the modeled internal characteristic to the sensed parameter.

    摘要翻译: 本发明的实施例涉及一种包括功率半导体器件和与其耦合的处理器的装置。 处理器被配置为向功率半导体器件提供控制信号以调节该装置的输出特性。 处理器建模功率半导体器件的内部特性,并且如果建模的内部特性跨越阈值,则改变控制信号。 在示例性实施例中,内部特性是MOSFET的通道温度。 诸如热敏电阻的传感器耦合到处理器或包括在处理器内以感测与诸如处理器温度的功率半导体器件分离的参数,并且处理器被配置为将建模的内部特性适应于所感测的参数。

    Apparatus for Detecting a State of Operation of a Power Semiconductor Device
    5.
    发明申请
    Apparatus for Detecting a State of Operation of a Power Semiconductor Device 有权
    用于检测功率半导体器件的操作状态的装置

    公开(公告)号:US20090284305A1

    公开(公告)日:2009-11-19

    申请号:US12123105

    申请日:2008-05-19

    IPC分类号: G05F1/00

    摘要: An embodiment of the invention relates to an apparatus including a power semiconductor device and a processor coupled thereto. The processor is configured to provide a control signal to the power semiconductor device to regulate an output characteristic of the apparatus. The processor models an internal characteristic of the power semiconductor device and alters the control signal if the modeled internal characteristic crosses a threshold value. In an exemplary embodiment, the internal characteristic is a channel temperature of a MOSFET. A sensor such as a thermistor is coupled to or included within the processor to sense a parameter separate from the power semiconductor device, such as a processor temperature, and the processor is configured to adapt the modeled internal characteristic to the sensed parameter.

    摘要翻译: 本发明的实施例涉及一种包括功率半导体器件和与其耦合的处理器的装置。 处理器被配置为向功率半导体器件提供控制信号以调节该装置的输出特性。 处理器建模功率半导体器件的内部特性,并且如果建模的内部特性跨越阈值,则改变控制信号。 在示例性实施例中,内部特性是MOSFET的通道温度。 诸如热敏电阻的传感器耦合到处理器或包括在处理器内以感测与诸如处理器温度的功率半导体器件分离的参数,并且处理器被配置为将建模的内部特性适应于所感测的参数。

    Apparatus for detecting a state of operation of a power semiconductor device
    6.
    发明授权
    Apparatus for detecting a state of operation of a power semiconductor device 有权
    用于检测功率半导体器件的操作状态的装置

    公开(公告)号:US08436600B2

    公开(公告)日:2013-05-07

    申请号:US13088200

    申请日:2011-04-15

    IPC分类号: G05F1/40

    摘要: An embodiment of the invention relates to an apparatus including a power semiconductor device and a processor coupled thereto. The processor is configured to provide a control signal to the power semiconductor device to regulate an output characteristic of the apparatus. The processor models an internal characteristic of the power semiconductor device and alters the control signal if the modeled internal characteristic crosses a threshold value. In an exemplary embodiment, the internal characteristic is a channel temperature of a MOSFET. A sensor such as a thermistor is coupled to or included within the processor to sense a parameter separate from the power semiconductor device, such as a processor temperature, and the processor is configured to adapt the modeled internal characteristic to the sensed parameter.

    摘要翻译: 本发明的实施例涉及一种包括功率半导体器件和与其耦合的处理器的装置。 处理器被配置为向功率半导体器件提供控制信号以调节该装置的输出特性。 处理器建模功率半导体器件的内部特性,并且如果建模的内部特性跨越阈值,则改变控制信号。 在示例性实施例中,内部特性是MOSFET的通道温度。 诸如热敏电阻的传感器耦合到处理器或包括在处理器内以感测与诸如处理器温度的功率半导体器件分离的参数,并且处理器被配置为将建模的内部特性适应于所感测的参数。

    Apparatus for Detecting a State of Operation of a Power Semiconductor Device
    7.
    发明申请
    Apparatus for Detecting a State of Operation of a Power Semiconductor Device 有权
    用于检测功率半导体器件的操作状态的装置

    公开(公告)号:US20110210711A1

    公开(公告)日:2011-09-01

    申请号:US13088200

    申请日:2011-04-15

    IPC分类号: G05F1/565

    摘要: An embodiment of the invention relates to an apparatus including a power semiconductor device and a processor coupled thereto. The processor is configured to provide a control signal to the power semiconductor device to regulate an output characteristic of the apparatus. The processor models an internal characteristic of the power semiconductor device and alters the control signal if the modeled internal characteristic crosses a threshold value. In an exemplary embodiment, the internal characteristic is a channel temperature of a MOSFET. A sensor such as a thermistor is coupled to or included within the processor to sense a parameter separate from the power semiconductor device, such as a processor temperature, and the processor is configured to adapt the modeled internal characteristic to the sensed parameter.

    摘要翻译: 本发明的实施例涉及一种包括功率半导体器件和与其耦合的处理器的装置。 处理器被配置为向功率半导体器件提供控制信号以调节该装置的输出特性。 处理器建模功率半导体器件的内部特性,并且如果建模的内部特性跨越阈值,则改变控制信号。 在示例性实施例中,内部特性是MOSFET的通道温度。 诸如热敏电阻的传感器耦合到处理器或包括在处理器内以感测与诸如处理器温度的功率半导体器件分离的参数,并且处理器被配置为将建模的内部特性适应于所感测的参数。