公开(公告)号：US4537652A

公开(公告)日：1985-08-27

申请号：US617563

申请日：1984-06-05

申请人： Akihisa Kawasaki ,  Kohji Tada ,  Toshihiro Kotani ,  Shintaro Miyazawa

发明人： Akihisa Kawasaki ,  Kohji Tada ,  Toshihiro Kotani ,  Shintaro Miyazawa

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B27/02 ,  H01L21/208

CPC分类号： C30B15/14

摘要： A process for preparing a single crystal comprising drawing up a single crystal by the Czochralski process and cooling it at a temperature not lower than 600.degree. C. at a reduced pressure or in vacuo, by which a single crystal having a dislocation density of 1.5.times.10.sup.4 cm.sup.2 or less is prepared.

摘要翻译： 一种制备单晶的方法，包括通过切克劳斯基法（Czochralski）法制备单晶并在减压或真空下在不低于600℃的温度下冷却，通过该方法，具有位错密度为1.5×10 4 cm2以下。

公开(公告)号：US4944834A

公开(公告)日：1990-07-31

申请号：US218457

申请日：1988-07-07

申请人： Kohji Tada ,  Toshihiro Kotani

发明人： Kohji Tada ,  Toshihiro Kotani

IPC分类号： C30B15/24 ,  C30B15/10 ,  C30B15/14 ,  C30B15/22 ,  C30B27/02 ,  C30B29/40 ,  C30B29/48 ,  H01L21/18 ,  H01L21/208

CPC分类号： C30B15/14 ,  Y10S117/90 ,  Y10T117/1052

摘要： In a process for pulling a crystal such as Si, Ge, GaAs, InP, GaP, InAs, AlAs, CdTe, CdSe, ZnTe, HgTe, MnTe, Gd.sub.3 Ga.sub.5 O.sub.12, Bi.sub.12 SiO.sub.20 and LiNbO.sub.3 from a raw material melt within a baffle plate whose bore diameter is gradually increased upward and which is arranged in such a manner that the melt inside and outside the baffle plate is in communication with each other through the small opening part at the end thereof, the baffle plate is moved relatively to the surface of the melt so as to increase the diameter of the melt surface inside the baffle plate with the increase of the diameter of the pulled crystal at the solid-liquid interface.

摘要翻译： 在将孔内径的挡板内的原料熔体中拉出诸如Si，Ge，GaAs，InP，GaP，InAs，AlAs，CdTe，CdSe，ZnTe，HgTe，MnTe，Gd3Ga5O12，Bi12SiO20和LiNbO3的晶体的工艺中， 逐渐向上增加，并且以使得挡板内侧和外侧的熔体通过其端部处的小开口部彼此连通的方式配置，挡板相对于熔体的表面移动，从而 以便随着固 - 液界面处的拉晶的直径的增加，增加挡板内熔体表面的直径。

公开(公告)号：US4528061A

公开(公告)日：1985-07-09

申请号：US485355

申请日：1983-04-15

申请人： Shintaro Miyazawa ,  Yasushi Nanishi ,  Kohji Tada ,  Akihisa Kawasaki ,  Toshihiro Kotani

发明人： Shintaro Miyazawa ,  Yasushi Nanishi ,  Kohji Tada ,  Akihisa Kawasaki ,  Toshihiro Kotani

IPC分类号： C30B27/02 ,  C30B29/42 ,  H01L21/18 ,  H01L21/208 ,  C30B15/04

CPC分类号： C30B27/02 ,  C30B29/42

摘要： A process for manufacturing boron-doped GaAs single crystals which comprises preparing a mixture of boron, gallium and arsenic covered by a liquid B.sub.2 O.sub.3 encapsulant, melting the mixture, pulling up boron-doped GaAs crystals from the mixture melts in accordance with the LEC method, crushing those crystals into small pieces after removing the seed end therefrom, remelting those pieces in the presence of B.sub.2 O.sub.3, and pulling up single crystals from the mixture melts in accordance with the LEC method.

摘要翻译： 一种硼掺杂GaAs单晶的制造方法，其包括制备由液体B 2 O 3密封剂覆盖的硼，镓和砷的混合物，熔融混合物，从混合物中拉出掺杂硼的GaAs晶体根据LEC方法熔融， 从中除去种子末端后，将这些晶体粉碎成小块，在B2O3存在下重熔这些晶片，并从混合物中拉出单晶，按照LEC方法熔化。

公开(公告)号：US4873062A

公开(公告)日：1989-10-10

申请号：US625537

申请日：1984-06-28

申请人： Toshihiro Kotani ,  Kohji Tada

发明人： Toshihiro Kotani ,  Kohji Tada

IPC分类号： C30B15/00 ,  C30B15/10

CPC分类号： C30B15/10 ,  C30B29/40 ,  Y10S117/90 ,  Y10T117/106 ,  Y10T117/1064

摘要： In an apparatus for the Czochralsky growth of compound single crystals wherein a single crystal growing portion is provided in a sealed vessel whose opening part is sealed by a B.sub.2 O.sub.3 melt and which contains therein an atmosphere of a volatile element of the compound, at least the inner wall the sealed vessel is made of a material having a melting point of at least 1400.degree. C., selected from Group III-V compounds and oxides of Group III or V elements. Compound single crystals such as GaAs, GaP, InAs, InP, ZnS, ZnSe and CdS obtained by the use of this apparatus are free from contamination with silicon.

摘要翻译： 在用于化合物单晶的切克劳斯基生长的装置中，其中单晶生长部分设置在密封容器中，其密封容器的开口部分由B 2 O 3熔体密封并且其中含有化合物的挥发性元素的气氛，至少内部 密封容器的壁由熔点为至少1400℃的材料制成，选自III-V族化合物和III族或V族元素的氧化物。 通过使用该装置获得的化合物单晶如GaAs，GaP，InAs，InP，ZnS，ZnSe和CdS不受硅污染。

公开(公告)号：US4684515A

公开(公告)日：1987-08-04

申请号：US727391

申请日：1985-04-24

申请人： Akihisa Kawasaki ,  Kohji Tada ,  Toshihiro Kotani ,  Shintaro Miyazawa

发明人： Akihisa Kawasaki ,  Kohji Tada ,  Toshihiro Kotani ,  Shintaro Miyazawa

IPC分类号： C30B15/00 ,  C30B15/14 ,  C30B27/02 ,  H01L21/208 ,  C01F1/00 ,  C30B29/40

CPC分类号： C30B15/14

摘要： A single crystal is prepared by drawing up a single crystal by the Czochralski process and cooling it at a temperature not lower than 600.degree. C. in vacuo. In this manner a single crystal having a dislocation density of 1.5.times.10.sup.4 cm.sup.2 or less is prepared.

公开(公告)号：US4596700A

公开(公告)日：1986-06-24

申请号：US671080

申请日：1984-11-13

申请人： Kohji Tada ,  Kotani Toshihiro ,  Masahiro Nakagawa

发明人： Kohji Tada ,  Kotani Toshihiro ,  Masahiro Nakagawa

IPC分类号： C30B15/10 ,  C30B15/26 ,  C30B27/02 ,  B01D9/00

CPC分类号： C30B15/10 ,  C30B15/26 ,  Y10S117/90 ,  Y10T117/1012 ,  Y10T117/106 ,  Y10T117/1064

摘要： An apparatus for producing a single crystal according to the CZ method, which comprisesa closed container consisting of upper and lower halves and having a shaft for pulling up the single crystal, at least a part of which contacting with said vapor of the elements is made of a material containing an element of the same group of the periodic table as that of component elements of the single crystal, a gap between said shaft and the container and an opening between said upper and lower halves of the container being sealed with a sealing material,at least one reservoir positioned in the container for supplying vapor of a volatile component element of the single crystal, anda heating means provided around the container; wherein a hot zone of the apparatus including the container is made of a material which has an X-ray absorption coefficient not larger than 5 cm.sup.2 /g, and said material of the hot zone has such thickness that X-ray transmittance through the whole hot zone is 10.sup.-6 or more so as to monitor the single crystal being pulled up by X-ray fluoroscopy.

摘要翻译： 根据CZ方法制造单晶的装置，其包括由上半部和下半部组成的封闭容器，并具有用于提升单晶的轴，其中至少一部分与元件的所述蒸气接触， 包含与单晶组成元件相同的元素周期表的元素的材料，所述轴和容器之间的间隙以及容器的上半部和下半部之间的开口用密封材料密封 位于所述容器中的用于供应所述单晶的挥发性成分元素的蒸汽的至少一个储存器和设置在所述容器周围的加热装置; 其特征在于，所述包含容器的装置的热区由X射线吸收系数不大于5cm 2 / g的材料制成，所述热区的材料具有通过整个热的X射线透过率的厚度 区域为10-6以上，以便通过X射线荧光透视来监测单晶被拉起。

公开(公告)号：US4938837A

公开(公告)日：1990-07-03

申请号：US215822

申请日：1988-07-06

申请人： Kohji Tada ,  Akihisa Kawasaki

发明人： Kohji Tada ,  Akihisa Kawasaki

IPC分类号： C30B15/12 ,  C30B27/02 ,  H01L21/18 ,  H01L21/208

CPC分类号： C30B15/12 ,  Y10T117/1052 ,  Y10T117/1056

摘要： A method and apparatus for recovering the inner crucible used in a double crucible process of drawing-up a single crystal. The inner crucible is recovered by pulling up the inner crucible above the molten raw material using only a simply arranged jig which does not require reconstruction of the vessel accommodating the single crystal drawing-up system. The arrangement is such that the inner crucible is allowed to rotate during the period in which the single crystal is being grown.

摘要翻译： 一种用于回收用于制备单晶的双坩埚工艺中使用的内坩埚的方法和装置。 通过仅使用简单地布置的夹具，将融化的原料上方的内坩埚拉起，从而回收内部坩埚，该夹具不需要重新构成容纳单晶成形系统的容器。 该布置使得内坩埚在单晶生长期间被允许旋转。

公开(公告)号：US4608535A

公开(公告)日：1986-08-26

申请号：US446395

申请日：1982-12-02

申请人： Kohji Tada ,  Yoshiki Kuhara ,  Masami Tatsumi ,  Tsutomu Mitsui

发明人： Kohji Tada ,  Yoshiki Kuhara ,  Masami Tatsumi ,  Tsutomu Mitsui

IPC分类号： G01R15/24 ,  G01R33/032 ,  G01R33/035 ,  G02F1/09 ,  G01R33/02 ,  G01R31/00 ,  G02B5/30

CPC分类号： G01R33/035 ,  G01R15/246 ,  G01R33/0322

摘要： A magnetic field and electric current measuring device which uses bismuth silicon oxide (Bi.sub.12 SiO.sub.20) or bismuth germanium oxide (Bi.sub.12 GeO.sub.20) as a Faraday cell, and which is so adapted that polarized light which enters the cell is passed back and forth through the cell along the optic axis thereof to cancel any change in optical rotatory power ascribable to a variation in temperature. A magnetic field applied in the direction of the optic axis of the Faraday cell is measured based on the angle of rotation of the polarization plane of the polarized light. The surface of the Faraday cell may be coated with a transparent and electrically conductive thin film to eliminate the effects of external electric fields.

摘要翻译： 使用铋氧化硅（Bi12SiO20）或氧化铋锗（Bi12GeO20）作为法拉第电池的磁场和电流测量装置，其适于使进入电池的偏振光沿着电池来回穿过电池 以防止归因于温度变化的光旋转功率的任何变化。 基于偏振光的偏振面的旋转角度来测量沿法拉第单元的光轴方向施加的磁场。 法拉第电池的表面可以涂覆有透明和导电的薄膜，以消除外部电场的影响。

公开(公告)号：US4563093A

公开(公告)日：1986-01-07

申请号：US452326

申请日：1982-12-22

申请人： Kohji Tada ,  Yoshiki Kuhara ,  Masami Tatsumi ,  Akihiko Kawakami

发明人： Kohji Tada ,  Yoshiki Kuhara ,  Masami Tatsumi ,  Akihiko Kawakami

IPC分类号： G01R15/24 ,  G01R29/08 ,  G01R29/12 ,  G01J4/00

CPC分类号： G01R29/0885 ,  G01R15/242 ,  G01R29/12

摘要： A voltage and electric field measuring device is disclosed. The device uses light, including a polarizer, an electro-optic crystal consisting of a material having an optical rotatory power, and an analyzer arranged in the stated order in the direction of advancement of applied light, with a quarter-wave plate being disposed between the polarizer and crystal or between the crystal and analyzer. The angle of orientation .psi. of the analyzer, relative to the optical axis of the crystal, is set to the product of .theta. and l, where .theta. represents the optical rotatory power, with respect to the applied light, of the crystal near a point at the center of a range of varying temperatures at the installation environment, and l represents the thickness of the crystal measured in the direction of advancement of light. The specified relation between .psi. and .theta..multidot.l maximizes the temperature stability of the device.

摘要翻译： 公开了电压和电场测量装置。 该装置使用包括偏振器的光，由具有旋光力的材料组成的电光晶体，以及按照所述顺序在施加光的推进方向上布置的分光器，四分之一波片位于 偏振器和晶体或晶体与分析仪之间。 分析仪相对于晶体的光轴的取向角的角度被设置为θ和l的乘积，其中θ表示相对于所施加的光的旋光度 在安装环境下的变化温度范围的中心，l表示在光的前进方向上测量的晶体的厚度。 psi和θxl之间的指定关系最大化了设备的温度稳定性。