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    Piezoelectric element and its manufacturing method
    2.
    发明授权
    Piezoelectric element and its manufacturing method 有权
    压电元件及其制造方法

    公开(公告)号：US07560854B2

    公开(公告)日：2009-07-14

    申请号：US12075976

    申请日：2008-03-13

    申请人： Koji Ohashi ,  Masao Nakayama

    发明人： Koji Ohashi ,  Masao Nakayama

    IPC分类号： B41J2/045

    CPC分类号： H01L41/0805 ,  H01L41/0477 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/318

    摘要： A piezoelectric element includes: a base substrate; a lower electrode provided above the base substrate; a lower dummy electrode provided on the base substrate and electrically insulated from the lower electrode; a piezoelectric layer provided on the base substrate, the lower electrode and the lower dummy electrode; and an upper electrode provided on the piezoelectric layer.

    摘要翻译： 压电元件包括​​：基底; 设置在基底基板上的下电极; 设置在所述基底基板上并与所述下部电极电绝缘的下部虚设电极; 设置在基底基板，下部电极和下部虚拟电极上的压电体层; 以及设置在压电层上的上电极。

    Piezoelectric element and its manufacturing method
    4.
    发明申请
    Piezoelectric element and its manufacturing method 有权
    压电元件及其制造方法

    公开(公告)号：US20080224569A1

    公开(公告)日：2008-09-18

    申请号：US12075976

    申请日：2008-03-13

    申请人： Koji Ohashi ,  Masao Nakayama

    发明人： Koji Ohashi ,  Masao Nakayama

    IPC分类号： H01L41/047 ,  H01L41/08

    CPC分类号： H01L41/0805 ,  H01L41/0477 ,  H01L41/0478 ,  H01L41/0973 ,  H01L41/318

    摘要： A piezoelectric element includes: a base substrate; a lower electrode provided above the base substrate; a lower dummy electrode provided on the base substrate and electrically insulated from the lower electrode; a piezoelectric layer provided on the base substrate, the lower electrode and the lower dummy electrode; and an upper electrode provided on the piezoelectric layer.

    摘要翻译： 压电元件包括​​：基底; 设置在基底基板上的下电极; 设置在所述基底基板上并与所述下部电极电绝缘的下部虚设电极; 设置在基底基板，下部电极和下部虚拟电极上的压电体层; 以及设置在压电层上的上电极。

    CLUTCH
    5.
    发明申请
    CLUTCH 有权
    离合器

    公开(公告)号：US20150247535A1

    公开(公告)日：2015-09-03

    申请号：US14428550

    申请日：2013-09-25

    申请人： Hirotaka SUNADA ,  Masao NAKAYAMA ,  Hideki TSUTSUI ,  Shintaro NAKANO ,  Daisuke KOBAYASHI

    发明人： Hirotaka Sunada ,  Masao Nakayama ,  Hideki Tsutsui ,  Shintaro Nakano ,  Daisuke Kobayashi

    IPC分类号： F16D23/12 ,  F16D27/108 ,  F16D15/00

    CPC分类号： F16D23/12 ,  F16D13/76 ,  F16D15/00 ,  F16D27/108 ,  F16D41/088 ,  F16D2023/123

    摘要： A clutch is provided with a drive-side rotational body and a driven-side rotational body, which can move in the axial direction between a coupled position and a decoupled position. The driven-side rotational body has a groove having a helical portion and an annular portion that is deeper than the helical portion. The driven-side rotational body is urged toward the coupled position by an urging member. The driven-side rotational body is moved to the decoupled position against the urging force of the urging member by insertion of a pin into the helical portion. A projection is provided on the tip of the pin, and a recessed groove for accommodating the projection when the pin is inserted into the helical portion is provided in the bottom surface of the helical portion.

    摘要翻译： 离合器设置有驱动侧旋转体和从动侧旋转体，其可以在联接位置和解耦位置之间沿轴向移动。 从动侧旋转体具有一个具有螺旋部分和比螺旋部分更深的环形部分的凹槽。 从动侧旋转体通过施力部件向联接位置推压。 通过将销插入螺旋部分中，被驱动侧旋转体抵抗推动构件的作用力而移动到解耦位置。 在销的顶端设置有突起，在螺旋部的底面设置有用于在销插入螺旋部时容纳突起的凹槽。

    Piezoelectric element, piezoelectric actuator, liquid ejecting head, and liquid ejecting apparatus
    6.
    发明授权
    Piezoelectric element, piezoelectric actuator, liquid ejecting head, and liquid ejecting apparatus 有权
    压电元件，压电致动器，液体喷射头和液体喷射装置

    公开(公告)号：US08585184B2

    公开(公告)日：2013-11-19

    申请号：US13225107

    申请日：2011-09-02

    申请人： Masao Nakayama

    发明人： Masao Nakayama

    IPC分类号： B41J2/045

    CPC分类号： H01L41/0973 ,  B41J2/14233 ,  B41J2/161 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/1645 ,  B41J2/1646 ,  H01L27/20 ,  H01L41/0536

    摘要： A piezoelectric element according to an embodiment of the invention includes a first electrode containing a noble metal, a first multilayer composite disposed on the first electrode, a second multilayer composite disposed on the first electrode with a distance from the first multilayer composite, an oxide film partly disposed on the surface of the first electrode between the first multilayer composite and the second multilayer composite, and a covering layer. The covering layer covers the side surfaces of the first and second multilayer composites, and the oxide film and the surface of the first electrode between the first multilayer composite and the second multilayer composite. The first multilayer composite and the second multilayer composite each include a piezoelectric layer, and a second electrode over the piezoelectric layer.

    摘要翻译： 根据本发明实施例的压电元件包括​​含有贵金属的第一电极，设置在第一电极上的第一多层复合材料，与第一多层复合材料相距一定距离的第一电极上设置的第二多层复合物，氧化膜 部分地设置在第一多层复合材料和第二多层复合材料之间的第一电极的表面上，以及覆盖层。 覆盖层覆盖第一和第二多层复合材料的侧表面，以及第一多层复合材料和第二多层复合材料之间的氧化物膜和第一电极的表面。 第一多层复合材料和第二多层复合材料各自包括压电层和压电层上的第二电极。

    Radio frequency amplifier circuit and mobile communication terminal using the same
    7.
    发明授权
    Radio frequency amplifier circuit and mobile communication terminal using the same 有权
    射频放大器电路和移动通信终端使用相同

    公开(公告)号：US08040186B2

    公开(公告)日：2011-10-18

    申请号：US12626056

    申请日：2009-11-25

    申请人： Masao Nakayama ,  Hiroshi Sugiyama ,  Kazuhiko Oohashi ,  Kouki Yamamoto ,  Kaname Motoyoshi

    发明人： Masao Nakayama ,  Hiroshi Sugiyama ,  Kazuhiko Oohashi ,  Kouki Yamamoto ,  Kaname Motoyoshi

    IPC分类号： H03G3/10

    CPC分类号： H03F3/189 ,  H03F1/30

    摘要： A bias circuit 12 includes: a transistor Q5 operable to supply, to an amplifier 11, a bias current in accordance with a base current supplied thereto; a transistor Q3 operable to pass a current in accordance with a reference voltage Vref; a transistor Q2 operable to correct, in accordance with the current passed by the transistor Q3, the base current to be supplied to the transistor Q5, so as to compensate a temperature characteristic represented by the transistor Q5; and a bias changing section (of a transistor Q4, and resistances R5, R6, and R7), connected to a base of the transistor Q5, operable to change, in accordance with a control voltage VSW, an amount of the base current to be supplied to the transistor Q5. The amplifier 11 amplifies, by using the bias current supplied by the bias circuit 12, a radio frequency signal having been inputted thereto.

    摘要翻译： 偏置电路12包括：晶体管Q5，其可操作以根据提供给其的基极电流向放大器11提供偏置电流; 晶体管Q3，其可操作以根据参考电压Vref传递电流; 晶体管Q2，其可操作以根据晶体管Q3通过的电流校正要提供给晶体管Q5的基极电流，以便补偿由晶体管Q5表示的温度特性; 和晶体管Q5的基极连接的晶体管Q4的偏置改变部（电阻R5，R6，R7），可以根据控制电压VSW将基极电流的量变更为 提供给晶体管Q5。 放大器11通过使用由偏置电路12提供的偏置电流放大输入的射频信号。

    Radio frequency amplifier circuit and mobile communication terminal using the same
    9.
    发明授权
    Radio frequency amplifier circuit and mobile communication terminal using the same 有权
    射频放大器电路和移动通信终端使用相同

    公开(公告)号：US07639080B2

    公开(公告)日：2009-12-29

    申请号：US11808157

    申请日：2007-06-07

    申请人： Masao Nakayama ,  Hiroshi Sugiyama ,  Kazuhiko Oohashi ,  Kouki Yamamoto ,  Kaname Motoyoshi

    发明人： Masao Nakayama ,  Hiroshi Sugiyama ,  Kazuhiko Oohashi ,  Kouki Yamamoto ,  Kaname Motoyoshi

    IPC分类号： H03G3/10

    CPC分类号： H03F3/189 ,  H03F1/30

    摘要： A bias circuit 12 includes: a transistor Q5 operable to supply, to an amplifier 11, a bias current in accordance with a base current supplied thereto; a transistor Q3 operable to pass a current in accordance with a reference voltage Vref; a transistor Q2 operable to correct, in accordance with the current passed by the transistor Q3, the base current to be supplied to the transistor Q5, so as to compensate a temperature characteristic represented by the transistor Q5; and a bias changing section (of a transistor Q4, and resistances R5, R6, and R7), connected to a base of the transistor Q5, operable to change, in accordance with a control voltage VSW, an amount of the base current to be supplied to the transistor Q5. The amplifier 11 amplifies, by using the bias current supplied by the bias circuit 12, a radio frequency signal having been inputted thereto.

    摘要翻译： 偏置电路12包括：晶体管Q5，其可操作以根据提供给其的基极电流向放大器11提供偏置电流; 晶体管Q3，其可操作以根据参考电压Vref传递电流; 晶体管Q2，其可操作以根据晶体管Q3通过的电流校正要提供给晶体管Q5的基极电流，以便补偿由晶体管Q5表示的温度特性; 和晶体管Q5的基极连接的晶体管Q4的偏置改变部（电阻R5，R6，R7），可以根据控制电压VSW将基极电流的量变更为 提供给晶体管Q5。 放大器11通过使用由偏置电路12提供的偏置电流放大输入的射频信号。

    Radio frequency amplifier circuit and mobile communication terminal using the same
    10.
    发明申请
    Radio frequency amplifier circuit and mobile communication terminal using the same 有权
    射频放大器电路和移动通信终端使用相同

    公开(公告)号：US20070296503A1

    公开(公告)日：2007-12-27

    申请号：US11808157

    申请日：2007-06-07

    申请人： Masao Nakayama ,  Hiroshi Sugiyama ,  Kazuhiko Oohashi ,  Kouki Yamamoto ,  Kaname Motoyoshi

    发明人： Masao Nakayama ,  Hiroshi Sugiyama ,  Kazuhiko Oohashi ,  Kouki Yamamoto ,  Kaname Motoyoshi

    IPC分类号： H03F3/04

    CPC分类号： H03F3/189 ,  H03F1/30

    摘要： A bias circuit 12 includes: a transistor Q5 operable to supply, to an amplifier 11, a bias current in accordance with a base current supplied thereto; a transistor Q3 operable to pass a current in accordance with a reference voltage Vref; a transistor Q2 operable to correct, in accordance with the current passed by the transistor Q3, the base current to be supplied to the transistor Q5, so as to compensate a temperature characteristic represented by the transistor Q5; and a bias changing section (of a transistor Q4, and resistances R5, R6, and R7), connected to a base of the transistor Q5, operable to change, in accordance with a control voltage VSW, an amount of the base current to be supplied to the transistor Q5. The amplifier 11 amplifies, by using the bias current supplied by the bias circuit 12, a radio frequency signal having been inputted thereto.

    摘要翻译： 偏置电路12包括：晶体管Q 5，其可操作以根据提供给其的基极电流向放大器11提供偏置电流; 晶体管Q 3，其可操作以根据参考电压Vref传递电流; 晶体管Q 2，用于根据由晶体管Q 3通过的电流校正要提供给晶体管Q 5的基极电流，以补偿由晶体管Q 5表示的温度特性; 和晶体管Q 5的基极连接的晶体管Q 4和电阻R 5，R 6和R 7的偏置改变部分，可操作以根据控制电压VSW改变量 要提供给晶体管Q 5的基极电流。 放大器11通过使用由偏置电路12提供的偏置电流放大输入的射频信号。