公开(公告)号：US4678534A

公开(公告)日：1987-07-07

申请号：US733361

申请日：1985-05-13

申请人： Koji Tada ,  Masami Tatsumi ,  Toshihiro Kotani ,  Shinichi Sawada

发明人： Koji Tada ,  Masami Tatsumi ,  Toshihiro Kotani ,  Shinichi Sawada

IPC分类号： C30B15/10 ,  C30B27/02 ,  C30B29/40 ,  C30B29/48 ,  H01L21/02 ,  H01L21/208

CPC分类号： C30B15/10 ,  C30B27/02 ,  C30B29/40 ,  Y10S117/907 ,  Y10T117/106

摘要： A modified liquid encapsulated Czockralski method for growing a single crystal of compound semiconductor is disclosed. This method uses two vessels. An inner vessel is filled with an inactive gas, a gas of an element of group V and optionally an impurity gas. The inner vessel encloses a crucible containing compound semiconductor material, an encapsulant material, and optionally an impurity element. An outer vessel is filled only with the inactive gas. The total pressure of the inner atmosphere is equal to or higher than that of the outer atmosphere. The partial pressure of the gas of the element of group V is larger than the dissociation pressure of the element of group V near the melting point of the compound semiconductor.

摘要翻译： 公开了用于生长化合物半导体的单晶的改进的液体封装的Czockralski方法。 这种方法使用两个血管。 内部容器填充有惰性气体，第V族元素的气体和任选的杂质气体。 内部容器包含含有化合物半导体材料的坩埚，密封剂材料和任选的杂质元素。 外部容器仅用惰性气体填充。 内部气氛的总压力等于或高于外部气氛的总压力。 V族元素的气体分压大于化合物半导体熔点附近的V族元素的离解压力。

公开(公告)号：US4603096A

公开(公告)日：1986-07-29

申请号：US684732

申请日：1984-12-21

申请人： Koji Tada ,  Yoshiki Kuhara ,  Masami Tatsumi

发明人： Koji Tada ,  Yoshiki Kuhara ,  Masami Tatsumi

IPC分类号： G03H1/02 ,  G03H1/04

CPC分类号： G03H1/02 ,  G03H2001/026 ,  G03H2001/0268

摘要： A hologram recording material comprises one of bismuth silicon oxide and bismuth germanium oxide, and Fe added to these material. The density of Fe is 10 p.p.m.

摘要翻译： 全息记录材料包括氧化铋和氧化铋锗中的一种，并将Fe添加到这些材料中。 Fe的密度为10 p.p.m。

公开(公告)号：US5145550A

公开(公告)日：1992-09-08

申请号：US038447

申请日：1987-04-14

申请人： Koji Tada ,  Masami Tatsumi

发明人： Koji Tada ,  Masami Tatsumi

IPC分类号： C30B29/40 ,  C30B15/04 ,  C30B27/02

CPC分类号： C30B27/02 ,  C30B29/40

摘要： A process for growing single crystals of the III-V compound semiconductor is provided, which is the vapor pressure control method using a vertical puller and which is characterized by dividing the surface area of the melt into two sections, covering one section with a liquid encapsulant while remaining the other section in contact with the atmosphere of the vessel (furnace), and this process may be preferably carried out by using an apparatus which comprises a sealable vessel, an upper shaft, a lower shaft, a plurality of heaters, a crucible and a means for dividing the surface of melt contained in the crucible, and as a result single crystal of III-V compound semiconductor having various excellent properties such as low impurity content (high purity), low dislocation density, and the like may be obtained.

摘要翻译： 提供了用于生长III-V族化合物半导体的单晶的方法，其是使用垂直拉拔器的蒸气压控制方法，其特征在于将熔体的表面积分成两部分，用液体密封剂覆盖一个部分 同时保留与容器（炉）的气氛接触的另一部分，并且该方法可以优选地通过使用包括可密封容器，上轴，下轴，多个加热器，坩埚的装置 以及用于分割坩埚中所含的熔体表面的方法，结果可以获得具有各种优异性能如高杂质含量（高纯度），低位错密度等的III-V族化合物半导体的单晶 。

公开(公告)号：US5256381A

公开(公告)日：1993-10-26

申请号：US842979

申请日：1992-02-28

申请人： Koji Tada ,  Masami Tatsumi

发明人： Koji Tada ,  Masami Tatsumi

IPC分类号： C30B27/02 ,  C30B35/00

CPC分类号： C30B27/02 ,  C30B29/40 ,  Y10S117/90 ,  Y10T117/1052 ,  Y10T117/1064

摘要： An apparatus for growing single crystals of III-V compound semiconductors of the vapor pressure control type using a vertical puller characterized by dividing the surface area of a melt into two sections, covering one section with a liquid encapsulant while maintaining the other section in contact with the atmosphere of the vessel (furnace). The apparatus comprises a sealable vessel, an upper shaft, a lower shaft, a plurality of heaters, a crucible and a means for dividing the surface of the melt contained in the crucible. As a result, single crystals of III-V compound semiconductors having various excellent properties such as low impurity content (high purity), low dislocation density and the like maybe obtained.

摘要翻译： 使用垂直拉拔器生长蒸气压控制型III-V族化合物半导体单晶的装置，其特征在于将熔体的表面积分成两部分，用液体密封剂覆盖一个部分，同时保持另一部分与 容器（炉）的气氛。 该装置包括可密封容器，上轴，下轴，多个加热器，坩埚和用于分离容纳在坩埚中的熔体表面的装置。 结果，可以获得具有低杂质含量（高纯度），低位错密度等各种优异性能的III-V族化合物半导体的单晶。

公开(公告)号：US4595876A

公开(公告)日：1986-06-17

申请号：US397009

申请日：1982-07-12

申请人： Yoshiki Kuhara ,  Koji Tada ,  Masami Tatsumi ,  Yuuji Hamazaki

发明人： Yoshiki Kuhara ,  Koji Tada ,  Masami Tatsumi ,  Yuuji Hamazaki

IPC分类号： G01R15/24 ,  G01R19/00 ,  G02F1/03 ,  G01R31/00

CPC分类号： G02F1/0322 ,  G01R15/242

摘要： An optical voltage and electric field sensor for detecting the voltage or electric field applied to a device made of a single crystal of bismuth silicon oxide (Bi.sub.12 SiO.sub.20) or bismuth germanium oxide (Bi.sub.12 GeO.sub.20) is disclosed. The device comprises a plurality of crystal plates stacked in a direction perpendicular to the propagation direction of light, each plate having only one dimension reduced to a very small size.

摘要翻译： 公开了一种用于检测施加到由铋氧化硅（Bi12SiO20）或氧化铋铋（Bi12GeO20）的单晶制成的器件的电压或电场的光电压和电场传感器。 该装置包括沿垂直于光的传播方向的方向堆叠的多个晶体板，每个板只有一个尺寸减小到非常小的尺寸。

公开(公告)号：US06781598B1

公开(公告)日：2004-08-24

申请号：US09722170

申请日：2000-11-24

申请人： Tetsuji Yamamoto ,  Koji Tada ,  Isamu Hamada

发明人： Tetsuji Yamamoto ,  Koji Tada ,  Isamu Hamada

IPC分类号： G09G500

CPC分类号： G06T15/20 ,  A63F2300/66 ,  A63F2300/6661

摘要： It is intended to display, in a 3D-CG animation, a high-quality background image that is free of distortion due to a pan of a viewing camera. Pre-rendering images of three-dimensional background scenes are mapped over the inside surfaces of respective virtual spheres 70ak−1 and 70ak, and viewing cameras 71ak−1 and 71ak are defined at the centers of the respective virtual spheres 70ak−1 and 70ak. When a three-dimensional model of a movable object such as a character model enters one of the virtual spheres, a region clipped by the pyramidal visual field of the viewing camera located at the center of the virtual sphere is projected onto a display screen.

摘要翻译： 它旨在在3D-CG动画中显示由于观看相机的泛而没有失真的高质量背景图像。 三维背景场景的预渲染图像被映射在各自的虚拟球体70ak-1和70ak的内表面上，并且观看照相机71ak-1和71ak被限定在各个虚拟球体70ak-1和70ak的中心处。 当诸如字符模型的可移动对象的三维模型进入虚拟球体之一时，将位于虚拟球体中心的观察摄像机的金字塔形视野裁剪的区域投影到显示屏幕上。

公开(公告)号：US09002383B2

公开(公告)日：2015-04-07

申请号：US13607927

申请日：2012-09-10

申请人： Koji Tada ,  Shingo Yamashita

发明人： Koji Tada ,  Shingo Yamashita

IPC分类号： H04W74/00 ,  H04W4/02

CPC分类号： H04W4/02

摘要： A task management system includes a game terminal and a server. The game terminal acknowledges user designation of whether positional information indicating a position arbitrarily designated by a user on a map of a scale displayed on the terminal or positional information indicating the current position of the terminal should be added to data that should be stored in the server along with the positional information. The game terminal transmits the data to which user designated positional information is added to the server. The server stores the data transmitted from the game terminal along with the positional information.

摘要翻译： 任务管理系统包括游戏终端和服务器。 游戏终端确认用户指定是否应该在应该存储在服务器中的数据中添加指示用户在终端上显示的比例的地图上的任意指定的位置的位置信息或指示终端的当前位置的位置信息 以及位置信息。 游戏终端将向用户指定的位置信息的数据发送到服务器。 服务器将从游戏终端发送的数据与位置信息一起存储。

公开(公告)号：US08289120B2

公开(公告)日：2012-10-16

申请号：US12960244

申请日：2010-12-03

申请人： Koji Tada

发明人： Koji Tada

IPC分类号： H01F27/30 ,  H01F27/29

CPC分类号： H01F27/06

摘要： According to one embodiment, an electronic component includes a cylindrical former proper, a thick portion provided at the end of the former proper and projecting from the outer surface of the former proper, a connecting portion adjacent to the thick portion including a terminal assembly, and a wire wound around the former proper and electrically connected to the terminal assembly. The thick portion includes a first retaining portion in which the wire running from the terminal assembly to the former proper is retained.

摘要翻译： 根据一个实施例，电子部件包括圆柱形成形器本体，设置在前者本身的端部并从前者的外表面突出的厚部分，与包括端子组件的厚部分相邻的连接部分，以及 围绕前者适当地缠绕并电连接到端子组件的线。 厚部分包括第一保持部分，其中保持从端子组件延伸到前者的线材。

公开(公告)号：US5589281A

公开(公告)日：1996-12-31

申请号：US393043

申请日：1995-02-23

申请人： Nobuyuki Okuda ,  Takashi Uemura ,  Yoshinobu Ueba ,  Koji Tada ,  Kengo Ohkura ,  Hirokazu Kugai

发明人： Nobuyuki Okuda ,  Takashi Uemura ,  Yoshinobu Ueba ,  Koji Tada ,  Kengo Ohkura ,  Hirokazu Kugai

IPC分类号： C01B31/02 ,  H01B1/04 ,  H01L39/12 ,  B32B9/00

CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B31/0206 ,  H01B1/04 ,  H01L39/123 ,  Y10S428/93 ,  Y10S505/802 ,  Y10S505/819 ,  Y10T428/24917 ,  Y10T428/24926 ,  Y10T428/30

摘要： A stabilized carbon cluster conducting material comprising (i) a core comprising a conducting or superconducting carbon cluster and (ii) a sheath covering the core; a device comprising a substrate having thereon a film of a conducting or superconducting carbon cluster covered with a protective film capable of substantially preventing permeation of oxygen and water in the atmosphere; and processes for producing the stabilized carbon cluster conducting material and the device.

摘要翻译： 稳定的碳簇导电材料，其包含（i）包含导电或超导碳簇的芯和（ii）覆盖所述芯的护套; 包括其上具有覆盖有能够基本上防止氧气和水在大气中渗透的保护膜的导电或超导碳簇的膜的基板的装置; 以及用于制备稳定的碳簇导电材料和装置的方法。

公开(公告)号：US4662711A

公开(公告)日：1987-05-05

申请号：US841041

申请日：1986-03-17

申请人： Koji Tada ,  Yoshiki Kuhara

发明人： Koji Tada ,  Yoshiki Kuhara

IPC分类号： G02B5/32 ,  G02B6/12 ,  G02F1/01 ,  G02F1/035 ,  G02F1/295 ,  G03H1/00 ,  G03H1/04 ,  G02B6/10 ,  G03H1/02

CPC分类号： G02F1/035 ,  G02B5/32 ,  G02B6/12004 ,  G02F1/2955

摘要： A method of making a holographic light guide comprising, in sequence, a substrate, a light guiding layer and a holographic recording layer that partially replaces the light guiding layer is disclosed. The substrate is made of a first bismuth sillenite group substance. The light guiding layer is made of a second bismuth sillenite group substance that has a higher refractive index than the first bismuth sillenite group substance and absorbs little of the light being guided. The holographic recording layer is made of a third bismuth sillenite group substance that has a higher refractive index than the first bismuth sillenite group substance and has a degree of photosensitivity.

摘要翻译： 公开了一种制造全息光导的方法，该方法依次包括基板，导光层和部分替代导光层的全息记录层。 基板由第一铋锡特组合物质制成。 导光层由比第一铋硅酸盐族物质更高的折射率的第二铋硅酸钡基物质制成，并且吸收很少的被引导的光。 所述全息记录层由具有比所述第一堇青石基物质更高的折射率的具有光敏度的第三堇青石基质物质制成。