摘要:
A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.
摘要:
A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.
摘要:
In order to easily evaluate defects of the silicon wafer affecting the characteristic of a device, the present invention provides a defect inspection apparatus for detecting defects existing on a surface of a sample and/or inside the sample, which comprises a display apparatus for displaying a distribution of the defects on a graph having coordinate axes of distance from a central position of the sample and the depth where the defect exists based on the depth information and the positional information obtained by a detecting means.
摘要:
A defect inspection apparatus for detecting defects existing on a surface of a semiconductor sample and/or inside the sample based on light information from the sample obtained by irradiating a light beam onto the sample is provided, which comprises a detecting means for detecting positions in the depth direction where the defects exist and distribution of the defects based on the light information; a setting means for setting a position in the depth direction where defects exist; and a means for displaying the distribution of the defects obtained by the detecting means, the displaying means displaying the distribution of the defects corresponding to the position in the depth direction set by the setting means.
摘要:
An amount of displacement and an overlapping area between first and second patterns formed through a double patterning lithography process can be determined. The first pattern is formed by a first exposure while the second pattern is formed by a later second exposure. A first image of the first pattern is formed prior to the formation of the second pattern. A second image of both patterns is formed after the formation of the second pattern. A two-step matching process between combined information and images of the first and second patterns is performed. The combined information includes information regarding the first pattern, as formed, combined with design information of the second pattern. Based on a moving amount of the design information of the second pattern, a displacement amount between the first and second patterns is determined.
摘要:
A belt pressurizing device includes: an endless belt that is circularly driven; a pressing member that presses the endless belt against a facing member with the endless belt interposed between the pressing member and the facing member; and a lubricant supplying member that supplies lubricant to reduce sliding resistance of the endless belt pressed by the pressing member, so as not to be in contact with the endless belt.
摘要:
A fixing device includes: a fixing member that fixes a toner image on a recording medium; a fixing pressure member that forms, between the fixing member and the fixing pressure member, a fixing pressure portion for the recording medium holding an unfixed toner image to pass through, by being brought into pressure contact with an outer circumferential surface of the fixing member; a drive unit that rotates the fixing pressure member by rotating the fixing member; and a lubricant adjusting member that comes into contact with an inner circumferential surface of a belt member, at least either the fixing member or the fixing pressure member being the belt member. The lubricant adjusting member is separated from the inner circumferential surface of the belt member, at least while the recording medium and the belt member are in contact with each other and while rotation of the belt member is stopped.
摘要:
A gate turn-off thyristor including: an n-type emitter semiconductor layer divided into a plurality of n-type areas; a p-type base semiconductor layer which cooperates with the n-type emitter semiconductor layer to form a first main circular surface; an n-type base semiconductor layer; and a p-type emitter semiconductor layer cooperating with the n-type base semiconductor layer to form a second main circular surface. An outer diameter of the p-type emitter semiconductor layer is smaller than that of the n-type emitter semiconductor layer. A first main electrode put in low resistance contact with the n-type emitter semiconductor layer is formed on the first main surface. A second main electrode put in low resistance contact with the p-type emitter layer and the n-type base semiconductor layer is formed on the second main surface. A control electrode is formed in the p-type base semiconductor on the first main surface. A first electrode plate larger in diameter than the n-type emitter semiconductor layer is connected electrically with the first main electrode. A second electrode plate larger in diameter than the n-type emitter semiconductor layer is connected electrically with the second main electrode.
摘要:
An object of the present invention is to provide a method that can properly carry out the evaluation of a displacement and an overlapping area between first and second patterns formed through double patterning and a device therefor.To accomplish the above object, a method and a device are provided that execute a two-step matching between combined information having information concerning the first pattern combined with design information of the second pattern formed through a second exposure of double patterning and images displaying the first and second patterns, and on the basis of a moving amount of the design information of the second pattern, a displacement amount between the first and second patterns is determined.
摘要:
A pattern matching method which is capable of selecting a suitable measurement object pattern, even on a sample containing a periodic structure, and a computer program for making a computer execute the pattern matching. In a pattern matching method which executes matching between the design data-based first image of an object sample, and a second image, whether or not a periodic structure is included in a region to execute the matching is determined, so as to select a pattern, based on distance between an original point which is set in said image, and the pattern configuring said periodic structure, in the case where the periodic structure is included in said region, and to select a pattern based on coincidence of the pattern in said image, in the case where the periodic structure is not included in said region, and a computer program product.