公开(公告)号：US11168396B2

公开(公告)日：2021-11-09

申请号：US16570074

申请日：2019-09-13

申请人： KOKUSAI ELECTRIC CORPORATION

发明人： Toru Kakuda ,  Masahisa Okuno ,  Katsuhiko Yamamoto ,  Takuya Joda ,  Sadayoshi Horii

IPC分类号： H01L21/00 ,  C23C16/46 ,  H01L21/02 ,  H01L21/67

摘要： There is provided a technique that includes a first act of modifying a film containing a silazane bond by heating a substrate, in which the film containing the silazane bond is formed over a surface of the substrate, to a first temperature and by supplying a first processing gas containing hydrogen peroxide to the substrate; and after the first act, a second act of modifying the film containing the silazane bond by heating the substrate to a second temperature higher than the first temperature and by supplying a second processing gas containing hydrogen peroxide to the substrate.

公开(公告)号：US11035037B2

公开(公告)日：2021-06-15

申请号：US16269319

申请日：2019-02-06

申请人： KOKUSAI ELECTRIC CORPORATION

发明人： Tetsuaki Inada ,  Takuya Joda ,  Daisuke Hara

IPC分类号： C23C16/44 ,  C23C16/40 ,  C23C16/458 ,  H01L21/67 ,  H01L21/673 ,  H01L21/02

摘要： There is provided a substrate processing apparatus including a process chamber in which a substrate is accommodated, a processing gas supply system configured to introduce a processing gas containing hydrogen peroxide into the process chamber and an exhaust system configured to exhaust an interior of the process chamber, wherein at least one selected from the group of the process chamber, the processing gas supply system, and the exhaust system includes a metal member, the metal member exposed to the processing gas or a liquid generated by liquefying the processing gas is made of a material containing an iron element, and a surface of a plane of the metal members, which is exposed to the processing gas or the liquid, is formed of a layer containing iron oxide which is formed by performing a baking process on the metal member.

公开(公告)号：US12084760B2

公开(公告)日：2024-09-10

申请号：US18163580

申请日：2023-02-02

申请人： Kokusai Electric Corporation

发明人： Takuya Joda ,  Arito Ogawa ,  Atsuro Seino

IPC分类号： C23C16/30 ,  C23C16/44 ,  C23C16/455 ,  C23C16/52

CPC分类号： C23C16/303 ,  C23C16/4408 ,  C23C16/4412 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52

摘要： There is provided a technique that includes: (a) loading a substrate into a process container; (b) processing the substrate by supplying a processing gas into the process container to form a film containing titanium and nitrogen on the substrate; (c) unloading the processed substrate from the process container; and (d) supplying a modifying gas containing at least one selected from the group of silicon, metal, and halogen into the process container after the processed substrate is unloaded from the process container.

公开(公告)号：US12000045B2

公开(公告)日：2024-06-04

申请号：US17466884

申请日：2021-09-03

申请人： Kokusai Electric Corporation

发明人： Takuya Joda ,  Yukinao Kaga ,  Yoshimasa Nagatomi

IPC分类号： H01L21/285 ,  C23C16/30 ,  C23C16/455 ,  C23C16/52 ,  H10B43/27

CPC分类号： C23C16/45557 ,  C23C16/303 ,  C23C16/52 ,  H01L21/28568 ,  H10B43/27

摘要： Described herein is a technique capable of improving characteristics of a film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) performing (a-1) supplying in parallel a metal-containing gas and a reducing gas that contains silicon and hydrogen and is free of halogen to a substrate in a process chamber, and (a-2) exhausting an inner atmosphere of the process chamber; (b) repeatedly performing (a) a first number of times; (c) supplying a nitrogen-containing gas to the substrate in the process chamber and exhausting the inner atmosphere of the process chamber after performing (b); and (d) repeatedly performing (a) a second number of times.

公开(公告)号：US10985017B2

公开(公告)日：2021-04-20

申请号：US16285881

申请日：2019-02-26

申请人： Kokusai Electric Corporation

发明人： Katsuhiko Yamamoto ,  Takuya Joda ,  Toru Kakuda ,  Sadayoshi Horii

IPC分类号： H01L21/318 ,  H01L21/02 ,  C23C8/16

摘要： Described herein is a technique capable of improving a quality of a substrate processing performed using hydrogen peroxide. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and (b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).