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公开(公告)号：US11869764B2
公开(公告)日：2024-01-09
申请号：US17943843
申请日：2022-09-13
发明人： Akinori Tanaka , Hideto Tateno , Sadayoshi Horii
IPC分类号： H01L21/02 , C23C16/40 , H01L21/67 , C23C16/56 , C23C16/455 , C23C16/448 , H01L21/31 , C23C16/44 , H01J37/32
CPC分类号： H01L21/02271 , C23C16/401 , C23C16/4412 , C23C16/4485 , C23C16/45561 , C23C16/56 , H01J37/32449 , H01L21/0262 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02326 , H01L21/02337 , H01L21/31 , H01L21/67017 , H01L21/67109 , H01L21/67253
摘要： Described herein is a technique capable of acquiring, monitoring and recording the progress of the reaction between a substrate and a reactive gas contained in a process gas in a process chamber during the processing of the substrate. According to the technique, there is provided a substrate processing apparatus including: a process chamber accommodating a substrate; a process gas supply system configured to supply a process gas into the process chamber via a process gas supply pipe; an exhaust pipe configured to exhaust an inner atmosphere of the process chamber; a first gas concentration sensor configured to detect a first concentration of a reactive gas contained in the process gas in the process gas supply pipe; and a second gas concentration sensor configured to detect a second concentration of the reactive gas contained in an exhaust gas in the exhaust pipe.
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公开(公告)号：US20230227979A1
公开(公告)日：2023-07-20
申请号：US18186333
申请日：2023-03-20
IPC分类号： C23C16/455 , C23C16/44 , H01L21/02 , C23C16/52 , C23C16/40
CPC分类号： C23C16/45565 , C23C16/45519 , C23C16/4412 , H01L21/02164 , H01L21/02271 , C23C16/52 , C23C16/402
摘要： There is provided a technique that includes: a first nozzle arranged to correspond to a first region where a plurality of product substrates are arranged in a substrate arrangement region where a plurality of substrates are arranged in a reaction tube, the first nozzle supplying a hydrogen-containing gas into the reaction tube; a second nozzle arranged to correspond to the first region and supplying an oxygen-containing gas into the reaction tube; a third nozzle arranged closer to the bottom opening than the first region to correspond to a second region where a dummy substrate or a heat insulator or both is arranged, the third nozzle supplying a dilution gas into the reaction tube; and a controller configured to be capable of controlling the hydrogen-containing gas and the dilution gas so that a concentration of the hydrogen-containing gas in the second region is lower than that in the first region.
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公开(公告)号：US11168396B2
公开(公告)日：2021-11-09
申请号：US16570074
申请日：2019-09-13
摘要： There is provided a technique that includes a first act of modifying a film containing a silazane bond by heating a substrate, in which the film containing the silazane bond is formed over a surface of the substrate, to a first temperature and by supplying a first processing gas containing hydrogen peroxide to the substrate; and after the first act, a second act of modifying the film containing the silazane bond by heating the substrate to a second temperature higher than the first temperature and by supplying a second processing gas containing hydrogen peroxide to the substrate.
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4.发明授权公开(公告)号：US10985017B2
公开(公告)日：2021-04-20
申请号：US16285881
申请日：2019-02-26
发明人： Katsuhiko Yamamoto , Takuya Joda , Toru Kakuda , Sadayoshi Horii
IPC分类号： H01L21/318 , H01L21/02 , C23C8/16
摘要： Described herein is a technique capable of improving a quality of a substrate processing performed using hydrogen peroxide. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and (b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).
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