-
公开(公告)号：US11168396B2
公开(公告)日：2021-11-09
申请号：US16570074
申请日：2019-09-13
摘要： There is provided a technique that includes a first act of modifying a film containing a silazane bond by heating a substrate, in which the film containing the silazane bond is formed over a surface of the substrate, to a first temperature and by supplying a first processing gas containing hydrogen peroxide to the substrate; and after the first act, a second act of modifying the film containing the silazane bond by heating the substrate to a second temperature higher than the first temperature and by supplying a second processing gas containing hydrogen peroxide to the substrate.
-
公开(公告)号：US20240212989A1
公开(公告)日：2024-06-27
申请号：US18596135
申请日：2024-03-05
发明人： Hidehiro YANAI , Shin Hiyama , Toru Kakuda , Toshiya Shimada , Tomohiro Amano
IPC分类号： H01J37/32 , G03F7/42 , H01L21/311
CPC分类号： H01J37/32458 , G03F7/427 , H01J37/321 , H01J37/32449 , H01J37/32633 , H01L21/31138
摘要： A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel; a gas introduction port installed at an upper end of the reaction vessel; an electrode installed along an outer circumference of the reaction vessel; a baffle installed between the upper end of the reaction vessel and an upper end of the electrode with a gap between an outer circumference of the baffle and an inner circumference of the reaction vessel along the outer circumference of the baffle; a fixing part attached to an inner plane of the baffle and disposed inside the outer circumference of the baffle so as to fix the baffle to the upper end of the reaction vessel; and a gas exhaust pipe connected to the reaction vessel.
-
3.发明授权公开(公告)号：US10985017B2
公开(公告)日：2021-04-20
申请号：US16285881
申请日：2019-02-26
发明人： Katsuhiko Yamamoto , Takuya Joda , Toru Kakuda , Sadayoshi Horii
IPC分类号： H01L21/318 , H01L21/02 , C23C8/16
摘要： Described herein is a technique capable of improving a quality of a substrate processing performed using hydrogen peroxide. According to one aspect of the technique described herein, there is provided a method of manufacturing a semiconductor device including: (a) supplying a first process gas containing water and a first concentration of hydrogen peroxide to a substrate having a silicon-containing film formed on a surface thereof; and (b) supplying a second process gas containing water and a second concentration of hydrogen peroxide higher than the first concentration to the substrate after (a).
-
公开(公告)号：US11948778B2
公开(公告)日：2024-04-02
申请号：US17375784
申请日：2021-07-14
发明人： Hidehiro Yanai , Shin Hiyama , Toru Kakuda , Toshiya Shimada , Tomihiro Amano
IPC分类号： H01J37/32 , G03F7/42 , H01L21/311
CPC分类号： H01J37/32458 , G03F7/427 , H01J37/321 , H01J37/32449 , H01J37/32633 , H01L21/31138
摘要： A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.
-
公开(公告)号：US11101111B2
公开(公告)日：2021-08-24
申请号：US16987073
申请日：2020-08-06
发明人： Hidehiro Yanai , Shin Hiyama , Toru Kakuda , Toshiya Shimada , Tomihiro Amano
IPC分类号： H01J37/32 , G03F7/42 , H01L21/311
摘要： A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel having a tubular shape and provided with a coil installed at an outer circumference thereof; a cover installed at a first end of the reaction vessel; a gas introduction port installed at the cover; a first plate installed between the gas introduction port and an upper end of the coil; a second plate installed between the first plate and the upper end of the coil; a substrate processing chamber installed at a second end of the reaction vessel; and a gas exhaust part connected to the substrate processing chamber.
-
-
-
-
搜索结果
5 条记录 (耗时 0.017 秒)
