公开(公告)号：US20110084353A1

公开(公告)日：2011-04-14

申请号：US12902402

申请日：2010-10-12

申请人： Kou-Liang CHAO ,  Mei-Ling Chen ,  Tse-Chuan Su ,  Hung-Hsin Kuo

发明人： Kou-Liang CHAO ,  Mei-Ling Chen ,  Tse-Chuan Su ,  Hung-Hsin Kuo

IPC分类号： H01L29/47 ,  H01L21/329

CPC分类号： H01L29/66143 ,  H01L21/2256 ,  H01L21/28537 ,  H01L29/0623 ,  H01L29/402 ,  H01L29/872

摘要： A trench Schottky rectifier device includes a substrate having a first conductivity type, a plurality of trenches formed in the substrate, and an insulating layer formed on sidewalls of the trenches. The trenches are filled with conductive structure. There is an electrode overlying the conductive structure and the substrate, and thus a Schottky contact forms between the electrode and the substrate. A plurality of embedded doped regions having a second conductivity type are formed in the substrate and located under the trenches. Each doped region and the substrate form a PN junction to pinch off current flowing toward the Schottky contact so as to suppress current leakage.

摘要翻译： 沟槽肖特基整流器件包括具有第一导电类型的衬底，在衬底中形成的多个沟槽，以及形成在沟槽的侧壁上的绝缘层。 沟槽填充有导电结构。 存在覆盖导电结构和衬底的电极，因此在电极和衬底之间形成肖特基接触。 在衬底中形成具有第二导电类型的多个嵌入式掺杂区域，并位于沟槽下方。 每个掺杂区域和衬底形成PN结以夹紧流向肖特基接触的电流，以便抑制电流泄漏。

公开(公告)号：US20100327288A1

公开(公告)日：2010-12-30

申请号：US12824539

申请日：2010-06-28

申请人： Kou-Liang CHAO ,  Hung-Hsin Kuo ,  Tse-Chuan Su ,  Mei-Ling Chen

发明人： Kou-Liang CHAO ,  Hung-Hsin Kuo ,  Tse-Chuan Su ,  Mei-Ling Chen

IPC分类号： H01L29/872 ,  H01L21/329 ,  H01L21/04

CPC分类号： H01L29/66143 ,  H01L29/0619 ,  H01L29/404 ,  H01L29/407 ,  H01L29/872 ,  H01L29/8725

摘要： A trench Schottky diode and its manufacturing method are provided. The trench Schottky diode includes a semiconductor substrate having therein a plurality of trenches, a gate oxide layer, a polysilicon structure, a guard ring and an electrode. At first, the trenches are formed in the semiconductor substrate by an etching step. Then, the gate oxide layer and the polysilicon structure are formed in the trenches and protrude above a surface of the semiconductor substrate. The guard ring is formed to cover a portion of the resultant structure. At last, the electrode is formed above the guard ring and the other portion not covered by the guard ring. The protruding gate oxide layer and the protruding polysilicon structure can avoid cracks occurring in the trench structure.

摘要翻译： 提供沟槽肖特基二极管及其制造方法。 沟槽肖特基二极管包括其中具有多个沟槽，栅极氧化物层，多晶硅结构，保护环和电极的半导体衬底。 首先，通过蚀刻步骤在半导体衬底中形成沟槽。 然后，在沟槽中形成栅氧化层和多晶硅结构，并突出在半导体衬底的表面之上。 保护环形成为覆盖所得结构的一部分。 最后，电极形成在防护环的上方，另一部分不被保护环覆盖。 突出的栅极氧化物层和突出的多晶硅结构可以避免在沟槽结构中发生裂纹。