公开(公告)号：US20130081683A1

公开(公告)日：2013-04-04

申请号：US13628738

申请日：2012-09-27

申请人： Kumi MASUNAGA ,  Akira FUJIMOTO ,  Eishi TSUTSUMI ,  Koji ASAKAWA ,  Tsutomu NAKANISHI ,  Hideyuki NISHIZAWA ,  Ryota KITAGAWA

发明人： Kumi MASUNAGA ,  Akira FUJIMOTO ,  Eishi TSUTSUMI ,  Koji ASAKAWA ,  Tsutomu NAKANISHI ,  Hideyuki NISHIZAWA ,  Ryota KITAGAWA

IPC分类号： H01L31/06 ,  H01L31/18

CPC分类号： H01L31/06 ,  H01L31/03529 ,  H01L31/0384 ,  H01L31/073 ,  H01L31/0735 ,  H01L31/18 ,  Y02E10/543 ,  Y02E10/544 ,  Y02P70/521

摘要： The present invention provides a photoelectric conversion element having high efficiency in propagating carrier excitation by use of enhanced electric fields. The photoelectric conversion element comprises a photoelectric conversion layer including two or more laminated semiconductor layers placed between two electrode layers, and is characterized by having an electric field enhancing layer placed between the semiconductor layers in the photoelectric conversion layer. The electric field enhancing layer is provided with a metal-made minute structure, and the minute structure is, for example, a porous membrane or a group of nano-objects such as very small spheres.

摘要翻译： 本发明提供一种通过使用增强的电场在传播载流子激发中具有高效率的光电转换元件。 光电转换元件包括光电转换层，该光电转换层包括放置在两个电极层之间的两个或多个层叠半导体层，其特征在于，在光电转换层中的半导体层之间具有电场增强层。 电场增强层设置有金属微细结构，微细结构例如为多孔膜或一组纳米物体，例如非常小的球体。

公开(公告)号：US20120228654A1

公开(公告)日：2012-09-13

申请号：US13221326

申请日：2011-08-30

申请人： Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Tsutomu NAKANISHI ,  Koji Asakawa ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

发明人： Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Tsutomu NAKANISHI ,  Koji Asakawa ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

IPC分类号： H01L33/60

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/38 ,  H01L33/40 ,  H01L2933/0016

摘要： According to one embodiment, a semiconductor light emitting device includes a structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes an electrode layer provided on the second semiconductor layer side of the structure. The electrode layer includes a metal portion with a thickness of not less than 10 nanometers and not more than 100 nanometers. A plurality of openings pierces the metal portion, each of the openings having an equivalent circle diameter of not less than 10 nanometers and not more than 5 micrometers. The device includes an inorganic film providing on the metal portion and inner surfaces of the openings, the inorganic film having transmittivity with respect to light emitted from the light emitting layer.

摘要翻译： 根据一个实施例，半导体发光器件包括包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层的结构。 该器件还包括设置在该结构的第二半导体层侧上的电极层。 电极层包括厚度不小于10纳米且不大于100纳米的金属部分。 多个开口刺穿金属部分，每个开口具有不小于10纳米且不大于5微米的等效圆直径。 所述装置包括在所述金属部分和所述开口的内表面上提供的无机膜，所述无机膜相对于从所述发光层发射的光具有透射率。

公开(公告)号：US20130075778A1

公开(公告)日：2013-03-28

申请号：US13407291

申请日：2012-02-28

申请人： Tsutomu NAKANISHI ,  Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Koji ASAKAWA ,  Shinji NUNOTANI ,  Takanobu KAMAKURA

发明人： Tsutomu NAKANISHI ,  Akira FUJIMOTO ,  Ryota KITAGAWA ,  Kumi MASUNAGA ,  Kenji NAKAMURA ,  Koji ASAKAWA ,  Shinji NUNOTANI ,  Takanobu KAMAKURA

IPC分类号： H01L33/40 ,  H01B5/00 ,  B82Y99/00

CPC分类号： B82Y20/00 ,  B82Y40/00 ,  H01L33/42 ,  H01L51/5209

摘要： According to one embodiment, a light-transmitting metal electrode includes a metal layer. The metal layer is provided on a major surface of a member and includes a metal nanowire and a plurality of openings formed with the metal nanowire. The thin layer includes a plurality of first straight line parts along a first direction and a plurality of second straight line parts along a direction different from the first direction. A maximum length of the first line parts along the first direction and a maximum length of the second line parts along the direction different from the first direction are not more than a wave length of visible light. A ratio of an area of the metal layer viewed in a normal direction of the surface to an area of the metal layer viewed in the normal direction is more than 20% and not more than 80%.

摘要翻译： 根据一个实施例，透光金属电极包括金属层。 金属层设置在构件的主表面上，并且包括金属纳米线和由金属纳米线形成的多个开口。 薄层包括沿着第一方向的多个第一直线部分和沿着与第一方向不同的方向的多个第二直线部分。 沿着第一方向的第一线部分的最大长度和沿着与第一方向不同的方向的第二线部分的最大长度不大于可见光的波长。 从表面的法线方向观察的金属层的面积与从法线方向观察的金属层的面积的比例为20％以上且80％以下。

公开(公告)号：US20120223348A1

公开(公告)日：2012-09-06

申请号：US13221319

申请日：2011-08-30

申请人： Kumi MASUNAGA ,  Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

发明人： Kumi MASUNAGA ,  Ryota KITAGAWA ,  Akira FUJIMOTO ,  Koji ASAKAWA ,  Takanobu KAMAKURA ,  Shinji NUNOTANI

IPC分类号： H01L33/60

CPC分类号： H01L33/405 ,  H01L33/38 ,  H01L2933/0016 ,  H01L2933/0083

摘要： According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The device also includes a first electrode layer having electrical continuity with the first semiconductor layer and a second electrode layer provided on the second semiconductor layer, the second electrode layer including a metal portion having a thickness not less than 10 nanometers and not more than 100 nanometers along a direction from the first semiconductor layer to the second semiconductor layer. A plurality of apertures penetrates the metal portion along the direction, each of the apertures viewed along the direction having equivalent circle diameters of not less than 10 nanometers and not more than 5 micrometers, and a Schottky barrier is provided between the second semiconductor layer and the metal portion.

摘要翻译： 根据一个实施例，半导体发光器件包括第一导电类型的第一半导体层，第二导电类型的第二半导体层和设置在第一半导体层和第二半导体层之间的发光层。 该器件还包括与第一半导体层具有电连续性的第一电极层和设置在第二半导体层上的第二电极层，第二电极层包括厚度不小于10纳米且不大于100纳米的金属部分 沿着从第一半导体层到第二半导体层的方向。 多个孔沿着该方向穿过金属部分，沿着具有等于10纳米且不超过5微米的等效圆直径的方向观察每个孔，并且在第二半导体层和第二半导体层之间设置肖特基势垒 金属部分。