公开(公告)号：US08231285B2

公开(公告)日：2012-07-31

申请号：US12610907

申请日：2009-11-02

申请人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03D5/00 ,  G03B27/53

CPC分类号： H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

摘要翻译： 使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个 选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。 基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。 这导致操作者的工作量减少，并且可以执行适当的修改。

公开(公告)号：US07780366B2

公开(公告)日：2010-08-24

申请号：US11831622

申请日：2007-07-31

申请人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03D5/00 ,  G03B27/32

CPC分类号： H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

摘要翻译： 使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个 选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。 基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。 这导致操作者的工作量减少，并且可以执行适当的修改。

公开(公告)号：US20100047702A1

公开(公告)日：2010-02-25

申请号：US12610907

申请日：2009-11-02

申请人： Kunie OGATA ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie OGATA ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03F7/20 ,  G03B27/32

CPC分类号： H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

摘要翻译： 使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个 选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。 基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。 这导致操作者的工作量减少，并且可以执行适当的修改。

公开(公告)号：US06984477B2

公开(公告)日：2006-01-10

申请号：US09963527

申请日：2001-09-27

申请人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03F9/00 ,  G03F7/20 ,  G03F7/30 ,  G03F7/40 ,  B05D3/12

CPC分类号： H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and an appropriate amendment can be performed.

摘要翻译： 使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个 选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。 基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。 这导致操作者的工作量减少，并且可以执行适当的修改。

公开(公告)号：US07648292B2

公开(公告)日：2010-01-19

申请号：US11831622

申请日：2007-07-31

申请人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03D5/00 ,  G03B27/32

摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

公开(公告)号：US07488127B2

公开(公告)日：2009-02-10

申请号：US11199215

申请日：2005-08-09

申请人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03D5/00 ,  G03B13/00 ,  G03B27/32

CPC分类号： H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

摘要： A resist pattern forming apparatus comprising a controller having a controlling portion that controls a processing of a coating and developing apparatus with a coating unit and a developing unit being provided therewith and an aligner being connected thereto, while an inspecting portion and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller. At the controller, a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed. As a result, the amending operation is facilitated by a reduced workload of an operator and in the same time, the appropriate amendment can be performed.

公开(公告)号：US20050271382A1

公开(公告)日：2005-12-08

申请号：US11199215

申请日：2005-08-09

申请人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03F7/16 ,  B05C11/00 ,  B05C11/08 ,  B05D1/40 ,  B05D3/00 ,  G03F7/20 ,  G03F7/30 ,  H01L21/00 ,  H01L21/027 ,  G03C5/00

CPC分类号： H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

摘要： A resist pattern forming apparatus comprising a controller having a controlling portion that controls a processing of a coating and developing apparatus with a coating unit and a developing unit being provided therewith and an aligner being connected thereto, while an inspecting portion and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller. At the controller, a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed. As a result, the amending operation is facilitated by a reduced workload of an operator and in the same time, the appropriate amendment can be performed.

摘要翻译： 一种抗蚀剂图形形成装置，包括具有控制部分的控制器，所述控制部分控制具有涂覆单元和显影单元的涂布和显影装置的处理，并且与其连接的对准器，同时检查部分等至少测量 选自多个测量项目中的一个，基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，底膜与抗蚀剂图案匹配的精度，显影后的缺陷 ， 等等。 测量的数据被传送到控制器。 控制器根据抗蚀剂的膜厚度和开发后的线宽度等测量项目的对应数据选择修改参数，修改后的参数修改为 执行。 因此，通过减少操作者的工作量来促进修改操作，并且同时可以执行适当的修改。

公开(公告)号：US20080182211A1

公开(公告)日：2008-07-31

申请号：US11831622

申请日：2007-07-31

申请人： Kunie OGATA ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura

发明人： Kunie OGATA ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura

IPC分类号： G03B27/32 ,  G03F7/26

CPC分类号： H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

摘要翻译： 使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个 选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。 基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。 这导致操作者的工作量减少，并且可以执行适当的修改。

公开(公告)号：US06593045B2

公开(公告)日：2003-07-15

申请号：US09902159

申请日：2001-07-11

申请人： Norikatsu Sato ,  Kunie Ogata ,  Yoshio Kimura ,  Hiroshi Tomita ,  Seiji Nakashima ,  Hidehiko Kamiya

发明人： Norikatsu Sato ,  Kunie Ogata ,  Yoshio Kimura ,  Hiroshi Tomita ,  Seiji Nakashima ,  Hidehiko Kamiya

IPC分类号： G03F900

CPC分类号： H01L21/67161 ,  G01N21/9501 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/67778 ,  H01L21/67781 ,  Y10S414/136 ,  Y10S414/137 ,  Y10S414/141

摘要： A cassette station, a processing station having a coating unit and a developing unit, and an inspecting station having a film thickness inspecting apparatus and a defect inspecting apparatus are disposed in the direction approximately perpendicular to the direction of the disposition of cassettes of the cassette station in such a manner that the inspecting station is disposed midway between the cassette station and the processing station. In the structure, the inspecting station and the processing station are connected and wafers are automatically transferred among the stations, operations from the substrate process to the inspection can be simplified and the time period necessary therefore can be shortened.

摘要翻译： 具有涂布单元和显影单元的盒式磁带站，具有膜厚度检查装置和缺陷检查装置的检查站沿大致垂直于盒式磁带机的盒的方向的方向设置 以这样的方式，使得检查站位于盒站和处理站之间的中间。 在结构中，检测站和处理站连接，晶片自动转移到站之间，可以简化从基板处理到检查的操作，从而可以缩短所需的时间。

公开(公告)号：US20100326353A1

公开(公告)日：2010-12-30

申请号：US12855524

申请日：2010-08-12

申请人： Masami AKIMOTO ,  Shinichi Hayashi ,  Yasushi Hayashida ,  Nobuaki Matsuoka ,  Yoshio Kimura ,  Issei Ueda ,  Hikaru Ito

发明人： Masami AKIMOTO ,  Shinichi Hayashi ,  Yasushi Hayashida ,  Nobuaki Matsuoka ,  Yoshio Kimura ,  Issei Ueda ,  Hikaru Ito

IPC分类号： B05C9/12

CPC分类号： H01L21/67184 ,  H01L21/67173 ,  H01L21/67178 ,  H01L21/67207 ,  H01L21/67745

摘要： Provided is a coating and developing apparatus composed of an assembly of plural unit blocks. A first unit-block stack and a second unit-block stack are arranged at different positions with respect to front-and-rear direction. Unit blocks for development, each of which comprises plural processing units including a developing unit that performs developing process after exposure and a transfer device that transfers a substrate among the processing units, are arranged at the lowermost level. Unit blocks for application, or coating, each of which comprises plural processing units including a coating unit that performs application process before exposure and a transfer device that transfers a substrate among the processing units, are arranged above the unit blocks for development. Unit blocks for application are arranged in both the first and second unit-block stacks. Unit blocks for application which a wafer goes through are determined depending on the layering positional relationship between an antireflective film and a resist film. An exposed wafer goes only through the unit block for development without going through any one of the unit blocks for application.