公开(公告)号：US06974963B2

公开(公告)日：2005-12-13

申请号：US10494524

申请日：2002-11-13

申请人： Michio Tanaka ,  Makoto Kiyota ,  Takashi Aiuchi ,  Ryouichi Uemura

发明人： Michio Tanaka ,  Makoto Kiyota ,  Takashi Aiuchi ,  Ryouichi Uemura

IPC分类号： G01N21/86 ,  G01N21/956 ,  G03F7/20 ,  H01L21/027 ,  H01L21/66 ,  H01L23/544

CPC分类号： G03F7/70491 ,  G01N21/95607 ,  G03F7/70625 ,  H01L22/34 ,  H01L2924/0002 ,  H01L2924/00

摘要： When a base film of a substrate is formed, for instance, on a scribe line of a wafer, a quadrangular first inspection pattern is formed in advance, and when a resist pattern is formed, a second inspection pattern are formed so as to be on a straight line to the first inspection pattern in a top plan view. When light is irradiated to a region including the first inspection pattern and the second inspection pattern and a spectrum is formed based on the reflected diffracted light, information of a line width of the second inspection pattern and a pitch of both inspection patterns is contained therein. In this connection, by preparing in advance a group of spectra based on various kinds of inspection patterns according to simulation and by comparing with an actual spectrum, the most approximate spectrum is selected, and thereby the line width and the pitch are estimated to evaluate the resist pattern.

摘要翻译： 例如，在基板的划线上形成基板的基膜时，预先形成四边形的第一检查图案，形成抗蚀剂图案，形成第二检查图案，使其成为 在顶视图中与第一检查图案的直线。 当光照射到包括第一检查图案和第二检查图案的区域并且基于反射的衍射光形成光谱时，包含第二检查图案的线宽和两个检查图案的间距的信息。 在这方面，通过根据模拟预先准备基于各种检查图案的一组光谱，并且通过与实际光谱进行比较，选择最近的光谱，从而估计线宽和间距以评估 抗蚀图案

公开(公告)号：US08231285B2

公开(公告)日：2012-07-31

申请号：US12610907

申请日：2009-11-02

申请人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03D5/00 ,  G03B27/53

CPC分类号： H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

摘要翻译： 使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个 选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。 基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。 这导致操作者的工作量减少，并且可以执行适当的修改。

公开(公告)号：US07780366B2

公开(公告)日：2010-08-24

申请号：US11831622

申请日：2007-07-31

申请人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03D5/00 ,  G03B27/32

CPC分类号： H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

摘要翻译： 使用涂覆和显影装置和对准器连接的抗蚀剂图案形成方法被控制以在其上形成有基膜和基底图案的基板的表面上形成抗蚀剂膜，然后检查至少一个 选自以下的多个测量项目：基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，基底图案与抗蚀剂图案匹配的精度，显影后的表面上的缺陷等。 基于每个测量项目的对应数据（例如抗蚀剂的膜厚度和显影后的线宽度）来选择修改参数，并且修改参数。 这导致操作者的工作量减少，并且可以执行适当的修改。

公开(公告)号：US06990380B2

公开(公告)日：2006-01-24

申请号：US10023898

申请日：2001-12-21

申请人： Yuji Yoshimoto ,  Ryouichi Uemura ,  Kunie Ogata ,  Yoichi Deguchi

发明人： Yuji Yoshimoto ,  Ryouichi Uemura ,  Kunie Ogata ,  Yoichi Deguchi

IPC分类号： G05B11/01

CPC分类号： H01L21/67276 ,  G05B23/0264 ,  G05B2219/45031

摘要： An object of the present invention is to grasp easily a process history of a target object such as a semiconductor wafer. The processing apparatus of the present invention includes: a processing apparatus body which includes a plurality of process units for executing a prescribed process to a target object, and transport mechanism for transporting said target object between the process units; a first controller for controlling the processing apparatus as a whole; a second controller for controlling the process units; an information storage section for taking in a signal transmitted and received between the first and second controllers; and a host computer for monitoring operation states of the process units. The present invention is extended to a processing system including a plurality of the processing apparatuses connected with a host computer which is further connected with a monitor computer through a communication network.

公开(公告)号：US06457882B2

公开(公告)日：2002-10-01

申请号：US09803966

申请日：2001-03-13

申请人： Kunie Ogata ,  Ryouichi Uemura ,  Masanori Tateyama ,  Yoshiyuki Nakajima

发明人： Kunie Ogata ,  Ryouichi Uemura ,  Masanori Tateyama ,  Yoshiyuki Nakajima

IPC分类号： G03D500

CPC分类号： G03F7/168 ,  G03F7/162

摘要： A substrate processing method for forming a resist film on a wafer with a base film being formed, and performing an exposure processing and a developing processing for the resist film to thereby form a desired resist pattern, has a base reflected light analyzing step of radiating a light of the same wavelength as an exposure light radiated during the exposure processing to the base film and analyzing a reflected light, before forming the resist film, and a processing condition control step of controlling at least one of a resist film forming condition and an exposure processing condition, based on the analysis of the reflected light. The method makes it possible to control a line width of a resist pattern with high precision.

摘要翻译： 一种用于在形成基膜的晶片上形成抗蚀剂膜的基板处理方法，并且对抗蚀剂膜进行曝光处理和显影处理从而形成所需的抗蚀剂图案，具有基底反射光分析步骤， 在形成抗蚀剂膜之前，将与曝光处理期间所辐照的曝光光相同的波长的光和形成抗蚀剂膜的反射光进行分析，以及处理条件控制步骤，其控制抗蚀剂膜形成条件和曝光中的至少一种 处理条件，基于反射光的分析。 该方法可以高精度地控制抗蚀剂图案的线宽。

公开(公告)号：US06766209B2

公开(公告)日：2004-07-20

申请号：US10178020

申请日：2002-06-24

申请人： Takashi Aiuchi ,  Makoto Kiyota ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Takashi Aiuchi ,  Makoto Kiyota ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G06F1900

CPC分类号： G06Q10/06

摘要： The present invention is a managing system for managing a processing system of a substrate and it has an information accumulation section for accumulating information on the processing system, an information collecting unit for collecting the information from the information accumulation section, and a managing unit for obtaining the information in the information collecting unit via the Internet or an intranet to manage the processing system based on this information.

摘要翻译： 本发明是一种用于管理基板的处理系统的管理系统，并且具有用于累积关于处理系统的信息的信息累积部分，用于从信息累积部分收集信息的信息收集单元和用于获取 通过因特网或内联网的信息收集单元中的信息，以基于该信息来管理处理系统。

公开(公告)号：US20120328273A1

公开(公告)日：2012-12-27

申请号：US13524023

申请日：2012-06-15

申请人： Hisashi KAWANO ,  Ryouichi Uemura ,  Kousuke Yoshihara ,  Shigeru Kasai ,  Keiji Tanouchi ,  Makoto Muramatsu ,  Mitsuaki Iwashita ,  Masatake Yoneda ,  Kazuhiro Ooya

发明人： Hisashi KAWANO ,  Ryouichi Uemura ,  Kousuke Yoshihara ,  Shigeru Kasai ,  Keiji Tanouchi ,  Makoto Muramatsu ,  Mitsuaki Iwashita ,  Masatake Yoneda ,  Kazuhiro Ooya

IPC分类号： H05B6/00

CPC分类号： H01L21/67115 ,  H05B3/0033

摘要： Disclosed is a thermal processing apparatus and method that can acquire a high throughput and reduce the occupation area of the thermal processing apparatus. A wafer is heated by an LED module that irradiates infrared light corresponding to the absorption wavelength of the wafer, and therefore, the wafer can be rapidly heated. Since an LED is used as a heat source and a temperature rise of LED is small, a cooling process after the heating process can be performed in the same process area as the heating process area. As a result, an installation area of the thermal processing apparatus can be reduced. Since the time for moving between a heating process area and a cooling process area can be saved, a time required for a series of processes including the heating process and the subsequent cooling process can be shortened, thereby improving a throughput.

摘要翻译： 公开了一种可以获得高产量并减少热处理装置的占用面积的热处理装置和方法。 通过照射与晶片的吸收波长相对应的红外光的LED模块对晶片进行加热，因此可以快速加热晶片。 由于将LED用作热源并且LED的温度升高很小，因此可以在与加热处理区域相同的处理区域中进行加热处理之后的冷却处理。 结果，可以减少热处理装置的安装面积。 由于可以节省在加热处理区域和冷却处理区域之间移动的时间，因此可以缩短包括加热处理和随后的冷却处理的一系列处理所需的时间，从而提高生产量。

公开(公告)号：US07648292B2

公开(公告)日：2010-01-19

申请号：US11831622

申请日：2007-07-31

申请人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03D5/00 ,  G03B27/32

摘要： A resist pattern forming method using a coating and developing apparatus and an aligner being connected thereto which are controlled to form a resist film on a surface of a substrate with a base film and a base pattern formed thereon, followed by inspecting at least one of a plurality of measurement items selected from: reflection ratio and film thickness of the base film and the resist film, line width after a development, an accuracy that the base pattern matches with a resist pattern, a defect on the surface after the development, etc. A parameter subject to amendment is selected based on corresponding data of each measurement item, such as the film thickness of the resist and the line width after the development, and amendment of the parameter is performed. This results in a reduced workload of an operator, and the appropriate amendment can be performed.

公开(公告)号：US07488127B2

公开(公告)日：2009-02-10

申请号：US11199215

申请日：2005-08-09

申请人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03D5/00 ,  G03B13/00 ,  G03B27/32

CPC分类号： H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

摘要： A resist pattern forming apparatus comprising a controller having a controlling portion that controls a processing of a coating and developing apparatus with a coating unit and a developing unit being provided therewith and an aligner being connected thereto, while an inspecting portion and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller. At the controller, a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed. As a result, the amending operation is facilitated by a reduced workload of an operator and in the same time, the appropriate amendment can be performed.

公开(公告)号：US20050271382A1

公开(公告)日：2005-12-08

申请号：US11199215

申请日：2005-08-09

申请人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

发明人： Kunie Ogata ,  Koki Nishimuko ,  Hiroshi Tomita ,  Yoshio Kimura ,  Ryouichi Uemura ,  Michio Tanaka

IPC分类号： G03F7/16 ,  B05C11/00 ,  B05C11/08 ,  B05D1/40 ,  B05D3/00 ,  G03F7/20 ,  G03F7/30 ,  H01L21/00 ,  H01L21/027 ,  G03C5/00

CPC分类号： H01L21/67253 ,  G03F7/162 ,  G03F7/3021 ,  H01L21/6715

摘要： A resist pattern forming apparatus comprising a controller having a controlling portion that controls a processing of a coating and developing apparatus with a coating unit and a developing unit being provided therewith and an aligner being connected thereto, while an inspecting portion and the like measures at least one of a plurality of measurement items selected from, a reflection ratio and a film thickness of a base film and a resist film, a line width after the development, an accuracy that the base film matches with a resist pattern, a defect after the development, and so on. The measured data is transmitted to the controller. At the controller, a parameter subject to an amendment is selected based on the corresponding data of each of the measurement item such as the film thickness of the resist and the line width after the development, and the amendment of the parameters subject to the amendment is performed. As a result, the amending operation is facilitated by a reduced workload of an operator and in the same time, the appropriate amendment can be performed.

摘要翻译： 一种抗蚀剂图形形成装置，包括具有控制部分的控制器，所述控制部分控制具有涂覆单元和显影单元的涂布和显影装置的处理，并且与其连接的对准器，同时检查部分等至少测量 选自多个测量项目中的一个，基膜和抗蚀剂膜的反射率和膜厚度，显影后的线宽度，底膜与抗蚀剂图案匹配的精度，显影后的缺陷 ， 等等。 测量的数据被传送到控制器。 控制器根据抗蚀剂的膜厚度和开发后的线宽度等测量项目的对应数据选择修改参数，修改后的参数修改为 执行。 因此，通过减少操作者的工作量来促进修改操作，并且同时可以执行适当的修改。